2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS • • • • • • S 1 2 Low On-Resistence: 3.6 Low Threshold: 1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 6 ns Low Input and Output Leakage APPLICATIONS 3 G Guaranteed Reliability Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage • Hi-Rel Systems • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Solid-State Relays D Top View ORDERING INFORMATION PART DESCRIPTION/DSCC PART NUMBER PACKAGE VISHAY ORDERING PART NUMBER Commercial 2N6661 2N6661 Commercial, Lead (Pb)-free www.vishay.com/doc?67884 See -2 Flow Document 2N6661-2 2N6661JANTX 2N6661-E3 2N6661-2 JANTX2N6661 (std Au leads) TO-205AD (TO-39) 2N6661JANTXV 2N6661JTX02 JANTX2N6661 (with solder) 2N6661JTXL02 JANTX2N6661P (with PIND) 2N6661JTXP02 JANTXV2N6661 (std Au leads) 2N6661JTXV02 JANTXV2N6661P (with PIND) 2N6661JTVP02 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 90 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) Pulsed Drain TC = 25 °C TC = 100 °C Currenta Maximum Power Dissipation ID IDM TC = 25 °C TA = 25 °C PD UNIT V 0.86 0.54 A 3 6.25 W 0.725 Thermal Resistance, Junction-to-Ambientb RthJA 170 Thermal Resistance, Junction-to-Case RthJC 20 TJ, Tstg - 55 to 150 Operating Junction and Storage Temperature Range °C/W °C Notes a. Pulse width limited by maximum junction temperature. b. Not required by military spec. S11-1542-Rev. D, 01-Aug-11 1 Document Number: 70225 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) LIMITS PARAMETER MIN. TYP.b VDS = 0 V, ID = 10 μA 90 125 - VDS = VGS, ID = 1 mA 0.8 1.6 2 TA = - 55 °C - 1.8 2.5 TA = 125 °C 0.3 1.3 - - - ± 100 - - ± 500 SYMBOL TEST CONDITIONS VDS MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VGS(th) VDS = 0 V Gate-Body Leakage IGSS VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VGS = 0 V On-State Drain Currentb ID(on) VGS = 10 V VDS = 10 V VGS = 5 V ID = 0.3 A ID = 1 A Drain-Source On-State Resistanceb RDS(on) Forward Transconductanceb gfs Diode Forward Voltage VSD TA = 125 °C VDS = 72 V TA = 125 °C VGS = 10 V TA = 125 °Cd VDS = 7.5 V, ID = 0.475 A VGS = 0 V IS = 0.86 A - - 1 - - 100 - 1.8 - - 3.8 5.3 - 3.6 4 7.5 V nA μA mA - 6.7 170 340 - mS 0.7 0.9 1.4 V Dynamic Input Capacitance Ciss - 35 50 Output Capacitance Coss - 15 40 Reverse Transfer Capacitance Crss - 2 10 Drain-Source Capacitance Cds - 30 - - 6 10 - 8 10 VGS = 0 V VDS = 25 V, f = 1 MHz pF Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = 25 V, RL = 23 ID 1 A, VGEN = 10 V, Rg = 23 ns Notes a. FOR DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW 300 μs duty cycle 2 %. c. Switching time is essentially independent of operating temperature. d. This parameter not registered with JEDEC. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-1542-Rev. D, 01-Aug-11 2 Document Number: 70225 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 100 VGS = 10 V VGS = 3 V 2.8 V 6V 0.8 I D - Drain Current (mA) I D - Drain Current (A) 2.6 V 80 5V 0.6 4V 0.4 60 2.4 V 40 2.2 V 3V 0.2 20 2.0 V 1.8 V 2V 0 0 0 1.0 2.0 3.0 4.0 0 5.0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Ohmic Region Characteristics Output Characteristics for Low Gate Drive 7 0.5 125 °C 6 R DS(on) - On-Resistance (Ω) VDS = 15 V TJ = - 55 °C 0.4 I D - Drain Current (A) 25 °C 0.3 0.2 0.1 5 4 1.0 A 0.5 A 3 I D = 0.1 A 2 1 0 0 0 2 4 6 8 0 10 12 16 20 Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage R DS(on) - Drain-Source On-Resistance (Normalized) R DS(on) - Drain-Source On-Resistance (Ω) 8 VGS - Gate-Source Voltage (V) 10 8 6 VGS = 10 V 4 2 0 0 4 VGS - Gate-Source Voltage (V) 0.5 1.0 1.5 2.0 VGS = 10 V 2.00 1.75 1.50 1.25 1.00 0.75 0.50 - 50 2.5 - 10 30 70 110 150 TJ - Junction Temperature (°C) I D - Drain Current (A) On-Resistance vs. Drain Current S11-1542-Rev. D, 01-Aug-11 2.25 Normalized On-Resistance vs. Junction Temperature 3 Document Number: 70225 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 125 VGS = 0 V VGS = 5 V f = 1 MHz C - Capacitance (pF) I D - Drain Current (mA) 100 1 TJ = 150 °C 0.1 125 °C 75 50 C iss C oss 25 25 °C C rss - 55 °C 0.01 0 0.5 1.0 1.5 2.0 0 VGS - Gate-to-Source Voltage (V) 10 20 30 40 V DS - Drain-to-Source Voltage (V) Threshold Region Capacitance 15.0 100 VDD = 25 V RL = 23 Ω VGS = 0 V to 10 V ID = 1.0 A I D = 1.0 A 12.5 t - Switching Time (ns) VGS - Gate-to-Source Voltage (V) 50 10.0 VDS = 45 V 7.5 72 V 5.0 10 td(off) tr td(on) tf 2.5 0 1 0 100 200 300 400 0.1 500 1 2 I D - Drain Current (A) Qg - Total Gate Charge (pC) Gate Charge Load Condition Effects on Switching 1.0 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 Single Pulse 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 0.01 t1 t2 2. Per Unit Base = RthJC = 20 °C/W 3. TJM - TC = PDMZthJC(t) 0.01 0.1 1.0 10 100 1K 10 K t1 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70225. S11-1542-Rev. D, 01-Aug-11 4 Document Number: 70225 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-205AD (TO-39 TALL LID) CD HD α P Q CH 1 2 CL L1 LU TW 3 r L2 TL LL LC Seating Plane LD DIM. CD CH HD LC (6) LD (7)(8) LL (7)(8) LU (7)(8) L1 (7)(8) L2 (7)(8) P (5) Q (4) r (9) TL (3) TW (2) α (6) ECN: S15-1675-Rev. D, 27-Jul-15 DWG: 5511 INCHES MIN. 0.305 0.240 0.335 MILLIMETERS MAX. 0.335 0.260 0.370 MIN. 7.75 6.10 8.51 0.021 0.750 0.019 0.050 — — 0.050 0.010 0.045 0.034 0.41 12.70 0.41 — 6.35 2.54 — — 0.74 0.71 0.200 TP 0.016 0.500 0.016 — 0.250 0.100 — — 0.029 0.028 MAX. 8.51 6.60 9.40 5.08 TP 45° TP 0.53 19.05 0.48 1.27 — — 1.27 0.25 1.14 0.86 45° TP Notes (1) Dimensions are in inches. Metric equivalents are given for general information only. (2) Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011" (0.028 mm). (3) Dimension TL measured from maximum HD. (4) Outline in this zone is not controlled. (5) Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling. (6) Leads at guage plane 0.054" + 0.001", - 0.000" (1.37 mm + 0.03 mm, - 0.00 mm) below seating plane shall be within 0.007" (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. (7) LU applies between L1 and L2, LD applies between L2 and L maximum. Diameter is uncontrolled in L1 and beyond LL minimum. (8) All three leads. (9) Radius (r) applies to both inside corners of tab. (10) Drain is electrically connected to the case. Revison: 27-Jul-15 1 Document Number: 71367 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000