2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V (D-S) Single and Quad MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N6660 rDS(on) Max (W) 60 VQ1004J/P VGS(th) (V) ID (A) 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 1.3 W Low Threshold: 1.7 V Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage Dual-In-Line TO-205AD (TO-39) N S D1 1 14 D4 S1 2 13 S4 3 12 G4 4 11 G1 Device Marking Side View 1 NC 2N6660 “S” fllxxyy 2 3 G D “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code 5 10 G3 S2 6 9 S3 D2 7 8 D3 Top View 2N6660 N VQ1004J “S” fllxxyy NC G2 N Device Marking Top View VQ1004P “S” fllxxyy N “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code Top View Plastic: VQ1004J Sidebraze: VQ1004P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Symbol 2N6660 VQ1004J Total Quad VQ1004P Drain-Source Voltage VDS 60 60 60 Gate-Source Voltage VGS "20 "30 "20 1.1 0.46 "0.46 0.8 0.26 0.26 3 2 2 Continuous Drain Current (TJ = 150_C) TC= 25_C TC= 100_C Pulsed Drain Currenta Thermal Resistance, IDM TC= 25_C Power Dissipation ID TC= 100_C Junction-to-Ambientb Thermal Resistance, Junction-to-Case Operating Junction and Storage Temperature Range VQ1004J/P V A 6.25 1.3 1.3 2 2.5 0.52 0.52 0.8 RthJA 170 0.96 0.96 62.5 RthJC 20 PD TJ, Tstg –55 to 150 Unit W _ _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. This parameter not registered with JEDEC. Document Number: 70222 S-04379—Rev. E, 16-Jul-01 www.vishay.com 11-1 2N6660, VQ1004J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N6660 Parameter Symbol Test Conditions Typa Min V(BR)DSS VGS = 0 V, ID = 10 mA 75 60 VGS(th) VDS = VGS, ID = 1 mA 1.7 0.8 VQ1004J/P Max Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V VDS = 0 V, VGS = "15 V Gate-Body Leakage 60 IGSS TC = 125_C VDS = 60 V, VGS = 0 V 2 0.8 2.5 "100 "100 "500 "500 nA 10 VDS = 35 V, VGS = 0 V Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V IDSS 1 500 TC = 125_C 500 m mA VDS = 28 V, VGS = 0 V TC = 125_C On-State Drain Currentb Drain-Source On-Resistanceb ID(on) rDS(on) VDS = 10 V, VGS = 10 V 3 VGS = 5 V, ID = 0.3 Ad 2 5 5 VGS = 10 V, ID = 1 A 1.3 3 3.5 TC = 125_Cd 1.5 2.4 Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 350 Common Source Output Conductanceb gos VDS = 10 V, ID = 0.1 A 1 Diode Forward Voltage VSD IS = 0.99 A, VGS = 0 V 0.8 1.5 4.2 170 A W 4.9 170 mS V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain-Source Capacitance Cds VDS = 24 V, VGS = 0 V f = 1 MHz 35 50 60 25 40 50 7 10 10 30 40 8 10 10 8.5 10 10 pF Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v80 ms duty cycle v1%. c. Switching time is essentially independent of operating temperature. d. This parameter not registered with JEDEC on 2N6660. www.vishay.com 11-2 ns VNDQ06 Document Number: 70222 S-04379—Rev. E, 16-Jul-01 2N6660, VQ1004J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics Output Characteristics for Low Gate Drive 2.0 100 VGS = 10 V 8V VGS = 10 V 2.8 V 7V 1.6 80 ID – Drain Current (mA) ID – Drain Current (A) 2.6 V 6V 1.2 5V 0.8 4V 0.4 60 2.4 V 40 2.2 V 20 1.8 V 2.0 V 3V 2V 0 0 0 1 2 3 4 5 0 0.4 VDS – Drain-to-Source Voltage (V) Transfer Characteristics 1.2 1.6 2.0 On-Resistance vs. Gate-to-Source Voltage 2.8 1.0 TJ = –55_C 1.0 A 25_C 0.5 A 2.4 rDS(on) – On-Resistance ( Ω ) VDS = 15 V 0.8 125_C ID – Drain Current (A) 0.8 VDS – Drain-to-Source Voltage (V) 0.6 0.4 0.2 2.0 1.6 1.2 0.8 ID = 0.1 A 0.4 0 0 0 2 4 6 8 0 10 8 12 16 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 2.5 20 2.25 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) rDS(on) – Drain-Source On-Resistance ( Ω ) 4 VGS – Gate-Source Voltage (V) 2.0 VGS = 10 V 1.5 1.0 0.5 0 VGS = 10 V 2.00 I D = 1.0 A 1.75 0.2 A 1.50 1.25 1.00 0.75 0.50 0 0.4 0.8 1.2 ID – Drain Current (A) Document Number: 70222 S-04379—Rev. E, 16-Jul-01 1.6 2.0 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 2N6660, VQ1004J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 10 120 VGS = 0 V VDS = 5 V f = 1 MHz 100 C – Capacitance (pF) ID – Drain Current (mA) TJ = 150_C 1 25_C 0.1 80 60 C iss 40 C oss 20 C rss 125_C –55_C 0.01 0 0.5 1.0 1.5 2.0 0 VGS – Gate-to-Source Voltage (V) 20 30 50 40 VDS – Drain-to-Source Voltage (V) Gate Charge Load Condition Effects on Switching 15.0 100 VDD = 25 V RG = 25 W VGS = 0 to 10 V I D = 1.0 A 50 12.5 VGS – Gate-to-Source Voltage (V) 10 t – Switching Time (ns) VDS = 30 V 10.0 48 V 7.5 5.0 20 10 td(off) tr 5 td(on) 2.5 tf 2 1 0 0 100 200 300 400 500 0.1 600 1 10 ID – Drain Current (A) Qg – Total Gate Charge (pC) Normalized Effective Transient Thermal Impedance, Junction-to-Case (TO-205AD) 1.0 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 Single Pulse 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJC = 20_C/W 0.01 3. TJM – TC = PDMZthJC(t) 0.01 0.1 1.0 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70222 S-04379—Rev. E, 16-Jul-01 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.