DT. www.daysemi.jp P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET - 30 RDS(on) () at VGS = - 10 V 0.018 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • AEC-Q101 Qualifiedc - 15 Configuration • 100 % Rg and UIS Tested Single • Compliant to RoHS Directive 2002/95/EC S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View P-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free and Halogen-free %5.4435 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) SYMBOL VDS LIMIT Drain-Source Voltage PARAMETER Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH Operating Junction and Storage Temperature Range V - 15 - 6.2 IDM - 60 IAS - 25 PD TC = 125 °C UNIT - 8.7 IS EAS TC = 25 °C - 30 31 6.8 2.3 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 85 RthJF 22 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountb Junction-to-Foot (Drain) °C/W Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. S11-2109 Rev. B, 31-Oct-11 1 Document Number: 67932 DT. www.daysemi.jp SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage - 30 - - - 1.5 - 2.0 - 2.5 VDS = 0 V, VGS = ± 20 V - - ± 100 - - -1 IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VGS = 0, ID = - 250 μA VDS = VGS, ID = - 250 μA IGSS Zero Gate Voltage Drain Current Transconductanceb VDS VGS(th) RDS(on) VGS = 0 V VDS = - 30 V VGS = 0 V VDS = - 30 V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 30 V, TJ = 175 °C - - - 150 VGS = - 10 V VDS- 5 V - 30 - - VGS = - 10 V ID = - 8 A - 0.013 0.018 VGS = - 10 V ID = - 8 A, TJ = 125 °C - - 0.026 VGS = - 10 V ID = - 8 A, TJ = 175 °C - - 0.030 VGS = - 4.5 V ID = - 6 A - 0.023 0.031 - 22 - - 1736 2170 - 392 490 - 268 335 gfs VDS = - 15 V, ID = - 8 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and VDS = - 15 V, f = 1 MHz VGS = 0 V VGS = - 10 V VDS = - 15 V, ID = - 4.6 A f = 1 MHz Rg td(on) tr td(off) VDD = - 15 V, RL = 15 ID - 1 A, VGEN = - 10 V, Rg = 1 tf - 38.3 58 - 5.9 - - 9 - 2 - 7 - 12.5 19 - 9 15 - 45.3 68 - 10 15 pF nC ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 8 A, VGS = 0 - - - 60 A - - 0.84 - 1.2 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2109 Rev. B, 31-Oct-11 2 Document Number: 67932 DT. www.daysemi.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 50 VGS = 10 V thru 5 V 40 ID - Drain Current (A) ID - Drain Current (A) 40 30 VGS = 4 V 20 10 30 TC = 25 °C 20 10 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 2 4 6 8 0 10 2 40 8 10 0.05 RDS(on) - On-Resistance (Ω) 32 TC = 25 °C 24 TC = - 55 °C 16 TC = 125 °C 8 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0 0.00 5 0 10 15 20 25 0 10 20 30 40 50 ID - Drain Current (A) ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 10 3000 2000 VGS - Gate-to-Source Voltage (V) 2500 C - Capacitance (pF) 6 Transfer Characteristics Output Characteristics gfs - Transconductance (S) 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Ciss 1500 1000 Coss 500 ID = 4.6 A 8 6 4 2 Crss 0 0 0 5 10 15 20 25 0 30 10 20 30 40 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S11-2109 Rev. B, 31-Oct-11 3 50 Document Number: 67932 DT. www.daysemi.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 8 A 1.7 10 VGS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.0 1.4 1.1 VGS = 4.5 V TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 175 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 1.0 1.2 - 30 VDS - Drain-to-Source Voltage (V) ID = 1 mA 0.7 VGS(th) Variance (V) ID = 250 μA 0.4 ID = 5 mA 0.1 - 0.2 - 0.5 - 50 - 25 0 25 50 75 100 125 150 - 32 - 34 - 36 - 38 - 40 - 50 - 25 175 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature IDM Limited I D - Drain Current (A) 100 100 µs Limited by RDS(on)* 10 1 ms 10 ms 1 100 ms 1s 10 s, DC 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area S11-2109 Rev. B, 31-Oct-11 4 Document Number: 67932 DT. www.daysemi.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S11-2109 Rev. B, 31-Oct-11 5 Document Number: 67932 Package Information SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS DIM Min INCHES Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.daysemi.jp 1 Application Note RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.daysemi.jp 1 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 72610