DINTEK DTM4435

DT.
www.daysemi.jp
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
- 30
RDS(on) () at VGS = - 10 V
0.018
RDS(on) () at VGS = - 4.5 V
0.031
ID (A)
• AEC-Q101 Qualifiedc
- 15
Configuration
• 100 % Rg and UIS Tested
Single
• Compliant to RoHS Directive 2002/95/EC
S
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
D
Top View
P-Channel MOSFET
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and Halogen-free
%5.4435
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
SYMBOL
VDS
LIMIT
Drain-Source Voltage
PARAMETER
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
ID
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain
Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
Operating Junction and Storage Temperature Range
V
- 15
- 6.2
IDM
- 60
IAS
- 25
PD
TC = 125 °C
UNIT
- 8.7
IS
EAS
TC = 25 °C
- 30
31
6.8
2.3
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
85
RthJF
22
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB
Mountb
Junction-to-Foot (Drain)
°C/W
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
S11-2109 Rev. B, 31-Oct-11
1
Document Number: 67932
DT.
www.daysemi.jp
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
- 30
-
-
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS = ± 20 V
-
-
± 100
-
-
-1
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
VGS = 0, ID = - 250 μA
VDS = VGS, ID = - 250 μA
IGSS
Zero Gate Voltage Drain Current
Transconductanceb
VDS
VGS(th)
RDS(on)
VGS = 0 V
VDS = - 30 V
VGS = 0 V
VDS = - 30 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 30 V, TJ = 175 °C
-
-
- 150
VGS = - 10 V
VDS- 5 V
- 30
-
-
VGS = - 10 V
ID = - 8 A
-
0.013
0.018
VGS = - 10 V
ID = - 8 A, TJ = 125 °C
-
-
0.026
VGS = - 10 V
ID = - 8 A, TJ = 175 °C
-
-
0.030
VGS = - 4.5 V
ID = - 6 A
-
0.023
0.031
-
22
-
-
1736
2170
-
392
490
-
268
335
gfs
VDS = - 15 V, ID = - 8 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
VDS = - 15 V, f = 1 MHz
VGS = 0 V
VGS = - 10 V
VDS = - 15 V, ID = - 4.6 A
f = 1 MHz
Rg
td(on)
tr
td(off)
VDD = - 15 V, RL = 15 
ID  - 1 A, VGEN = - 10 V, Rg = 1 
tf
-
38.3
58
-
5.9
-
-
9
-
2
-
7
-
12.5
19
-
9
15
-
45.3
68
-
10
15
pF
nC

ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 8 A, VGS = 0
-
-
- 60
A
-
- 0.84
- 1.2
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2109 Rev. B, 31-Oct-11
2
Document Number: 67932
DT.
www.daysemi.jp
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
50
50
VGS = 10 V thru 5 V
40
ID - Drain Current (A)
ID - Drain Current (A)
40
30
VGS = 4 V
20
10
30
TC = 25 °C
20
10
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0
2
4
6
8
0
10
2
40
8
10
0.05
RDS(on) - On-Resistance (Ω)
32
TC = 25 °C
24 TC = - 55 °C
16
TC = 125 °C
8
0.04
0.03
VGS = 4.5 V
0.02
VGS = 10 V
0.01
0
0.00
5
0
10
15
20
25
0
10
20
30
40
50
ID - Drain Current (A)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
10
3000
2000
VGS - Gate-to-Source Voltage (V)
2500
C - Capacitance (pF)
6
Transfer Characteristics
Output Characteristics
gfs - Transconductance (S)
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Ciss
1500
1000
Coss
500
ID = 4.6 A
8
6
4
2
Crss
0
0
0
5
10
15
20
25
0
30
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S11-2109 Rev. B, 31-Oct-11
3
50
Document Number: 67932
DT.
www.daysemi.jp
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 8 A
1.7
10
VGS = 10 V
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.0
1.4
1.1
VGS = 4.5 V
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.8
0.5
- 50 - 25
0
25
50
75
100
125
150
0.001
0.0
175
0.2
0.4
0.6
0.8
1.0
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
1.0
1.2
- 30
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
0.7
VGS(th) Variance (V)
ID = 250 μA
0.4
ID = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
0
25
50
75
100
125
150
- 32
- 34
- 36
- 38
- 40
- 50 - 25
175
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
IDM Limited
I D - Drain Current (A)
100
100 µs
Limited by
RDS(on)*
10
1 ms
10 ms
1
100 ms
1s
10 s, DC
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
* VGS
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which R DS(on) is specified
Safe Operating Area
S11-2109 Rev. B, 31-Oct-11
4
Document Number: 67932
DT.
www.daysemi.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
S11-2109 Rev. B, 31-Oct-11
5
Document Number: 67932
Package Information
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
DIM
Min
INCHES
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.daysemi.jp
1
Application Note
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
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1
Document Number: 72606
Revision: 21-Jan-08
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“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 72610