DINTEK DTS4501_13

DTS4501
P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
- 40
RDS(on) () at VGS = - 10 V
0.083
RDS(on) () at VGS = - 4.5 V
0.110
ID (A)
- 3.6
Configuration
Single
TO-236
(SOT-23)
G
S
1
G
3
S
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D
2
Top View
D
DTS4501
P-Channel MOSFET
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and Halogen-free
DTS4501
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 40
Gate-Source Voltage
VGS
± 20
PARAMETER
Continuous Drain Current
TC = 25 °C
ID
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain
Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
Operating Junction and Storage Temperature Range
V
- 3.6
- 2.6
IS
- 3.6
IDM
- 18
IAS
- 12
EAS
7.2
PD
TC = 125 °C
UNIT
3
1
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
166
RthJF
50
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB
Mountb
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
1
°C/W
DTS4501
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0, ID = - 250 μA
- 40
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = - 40 V
-
-
-1
-
-
- 50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = - 40 V, TJ = 125 °C
VGS = 0 V
VDS = - 40 V, TJ = 175 °C
-
-
- 150
On-State Drain Currenta
ID(on)
VGS = - 10 V
VDS- 5 V
- 10
-
-
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
VGS = - 10 V
ID = - 3 A
-
0.071
0.083
VGS = - 10 V
ID = - 3 A, TJ = 125 °C
-
-
0.116
VGS = - 10 V
ID = - 3 A, TJ = 175 °C
-
-
0.139
VGS = - 4.5 V
ID = - 2.4 A
gfs
VDS = - 5 V, ID = - 3 A
-
0.100
0.110
-
8
-
-
493
620
-
76
95
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
51
65
Total Gate Chargec
Qg
-
10.5
16
-
1.8
-
-
2.6
-
f = 1 MHz
5
10
15
-
5
8
VDD = - 20 V, RL = 6.7 
ID  - 3 A, VGEN = - 10 V, Rg = 1 
-
11
17
-
19
29
-
8
12
Gate-Source
Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = - 10 V
VDS = - 25 V, f = 1 MHz
VDS = - 20 V, ID = - 3 A
td(on)
tr
td(off)
tf
pF
nC

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 1.5 A, VGS = 0
-
-
- 18
A
-
- 0.8
- 1.2
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTS4501
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
20
VGS = 10 V thru 6 V
16
ID - Drain Current (A)
ID - Drain Current (A)
16
VGS = 5 V
12
8
4
TC = 25 °C
8
4
VGS = 4 V
TC = 125 °C
0
TC = - 55 °C
0
0
VDS - Drain-to-Source Voltage (V)
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
4
6
8
0
10
2.0
15
1.6
12
gfs - Transconductance (S)
ID - Drain Current (A)
12
1.2
TC = 25 °C
0.8
0.4
10
TC = - 55 °C
TC = 25 °C
9
TC = 125 °C
6
3
TC = 125 °C
TC = - 55 °C
0
0.0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
0.0
10
1.6
3.2
4.8
6.4
8.0
ID - Drain Current (A)
Transfer Characteristics
Transconductance
1.0
800
600
0.6
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
700
0.8
VGS = 4.5 V
0.4
Ciss
500
400
300
200
Coss
0.2
VGS = 10 V
100
Crss
0.0
0
0
4
12
8
ID - Drain Current (A)
16
20
0
On-Resistance vs. Drain Current
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
3
35
40
DTS4501
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 3 A
VDS = 20 V
8
6
4
2
ID = 3 A
2.1
VGS = 10 V
1.7
1.3
VGS = 4.5 V
0.9
0.5
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
10
- 50 - 25
12
Gate Charge
150
175
On-Resistance vs. Junction Temperature
100
1.0
10
0.8
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0
25
50
75 100 125
TJ - Junction Temperature (°C)
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.6
0.4
0.2
TJ = 150 °C
TJ = 25 °C
0.001
0.0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
0.0
1.5
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
- 40
1.0
VGS(th) Variance (V)
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
0.7
ID = 250 μA
0.4
ID = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
0
25
50
75
100
125
150
- 42
- 44
- 46
- 48
- 50
- 50 - 25
175
TJ - Temperature (°C)
0
25
50
75 100 125
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4
150
175
DTS4501
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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
Limited by RDS(on)*
100 ms
0.1
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
1s
10 s, DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
5
100
600
DTS4501
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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C )
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
6
Package Information
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SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
INCHES
Min
Max
Min
Max
A
0.89
1.12
0.035
0.044
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.95 BSC
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
1
Application Note
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0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
1
Legal Disclaimer Notice
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
1