DTS4501 www.daysemi.jp P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC - 40 RDS(on) () at VGS = - 10 V 0.075 RDS(on) () at VGS = - 4.5 V 0.145 ID (A) - 4.6 Configuration Single TO-236 (SOT-23) G S 1 G 3 S D 2 Top View D DTS4501 P-Channel MOSFET ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and Halogen-free DTS4501 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain IS Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range V - 4.6 - 2.6 - 3.7 IDM - 18 IAS - 12 EAS 7.2 PD TC = 125 °C UNIT 3 1 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 166 RthJF 50 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountb Junction-to-Foot (Drain) °C/W Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. S11-2111-Rev. C, 07-Nov-11 1 Document Number: 65735 DTS4501 www.daysemi.jp SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0, ID = - 250 μA - 40 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = - 40 V - - -1 - - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 40 V, TJ = 125 °C VGS = 0 V VDS = - 40 V, TJ = 175 °C - - - 150 On-State Drain Currenta ID(on) VGS = - 10 V VDS- 5 V - 10 - - Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) VGS = - 10 V ID = - 3 A - 0.061 0.075 VGS = - 10 V ID = - 3 A, TJ = 125 °C - - 0.116 VGS = - 10 V ID = - 3 A, TJ = 175 °C - - 0.139 VGS = - 4.5 V ID = - 2.4 A gfs VDS = - 5 V, ID = - 3 A - 0.120 0.145 - 8 - - 493 620 - 76 95 V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 51 65 Total Gate Chargec Qg - 10.5 16 - 1.8 - - 2.6 - f = 1 MHz 5 10 15 - 5 8 VDD = - 20 V, RL = 6.7 ID - 3 A, VGEN = - 10 V, Rg = 1 - 11 17 - 19 29 - 8 12 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = - 10 V VDS = - 25 V, f = 1 MHz VDS = - 20 V, ID = - 3 A td(on) tr td(off) tf pF nC ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 1.5 A, VGS = 0 - - - 18 A - - 0.8 - 1.2 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2111-Rev. C, 07-Nov-11 2 Document Number: 65735 DTS4501 www.daysemi.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 20 20 VGS = 10 V thru 6 V 16 ID - Drain Current (A) ID - Drain Current (A) 16 VGS = 5 V 12 8 4 TC = 25 °C 8 4 VGS = 4 V TC = 125 °C 0 TC = - 55 °C 0 0 VDS - Drain-to-Source Voltage (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2 4 6 8 0 10 2.0 15 1.6 12 gfs - Transconductance (S) ID - Drain Current (A) 12 1.2 TC = 25 °C 0.8 0.4 10 TC = - 55 °C TC = 25 °C 9 TC = 125 °C 6 3 TC = 125 °C TC = - 55 °C 0 0.0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0.0 10 1.6 3.2 4.8 6.4 8.0 ID - Drain Current (A) Transfer Characteristics Transconductance 1.0 800 600 0.6 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 700 0.8 VGS = 4.5 V 0.4 Ciss 500 400 300 200 Coss 0.2 VGS = 10 V 100 Crss 0.0 0 0 4 8 12 ID - Drain Current (A) 16 20 0 On-Resistance vs. Drain Current S11-2111-Rev. C, 07-Nov-11 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 35 40 Capacitance 3 Document Number: 65735 DTS4501 www.daysemi.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 3 A VDS = 20 V 8 6 4 2 ID = 3 A 2.1 VGS = 10 V 1.7 1.3 VGS = 4.5 V 0.9 0.5 0 0 2 4 6 8 Qg - Total Gate Charge (nC) 10 - 50 - 25 12 Gate Charge 150 175 On-Resistance vs. Junction Temperature 100 1.0 10 0.8 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0 25 50 75 100 125 TJ - Junction Temperature (°C) TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.6 0.4 0.2 TJ = 150 °C TJ = 25 °C 0.001 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 0.0 1.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage - 40 1.0 VGS(th) Variance (V) VDS - Drain-to-Source Voltage (V) ID = 1 mA 0.7 ID = 250 μA 0.4 ID = 5 mA 0.1 - 0.2 - 0.5 - 50 - 25 0 25 50 75 100 125 150 - 42 - 44 - 46 - 48 - 50 - 50 - 25 175 TJ - Temperature (°C) 0 25 50 75 100 125 TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S11-2111-Rev. C, 07-Nov-11 4 150 175 Document Number: 65735 DTS4501 www.daysemi.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms Limited by RDS(on)* 100 ms 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 1s 10 s, DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S11-2111-Rev. C, 07-Nov-11 5 Document Number: 65735 DTS4501 www.daysemi.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C ) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. . S11-2111-Rev. C, 07-Nov-11 6 Document Number: 65735 Package Information SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.GD\VHPLMS 1 Application Note 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.daysemi.jp 1 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 72610