DINTEK DTM4483

DTM4483
www.din-tek.jp
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
- 30
RDS(on) () at VGS = - 10 V
0.0085
RDS(on) () at VGS = - 4.5 V
0.0200
ID (A)
• ESD Protection: 3000 V
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedc
- 22
Configuration

Single
S
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
5
D
G
4
G
D
Top View
P-Channel MOSFET
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and Halogen-free
DTM4483
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
ID
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
Operating Junction and Storage Temperature Range
V
- 22
- 13
IS
-6
IDM
- 84
IAS
- 50
EAS
125
PD
TC = 125 °C
UNIT
7
2
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
85
RthJF
21
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB Mountb
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
1
°C/W
DTM4483
www.din-tek.jp
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = - 250 μA
- 30
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS = ± 20 V
-
-
±1
VDS = 0 V, VGS = ± 12 V
-
-
±2
V
mA
Gate-Source Leakage
IGSS
VGS = 0 V
VDS = - 30 V
-
-
-1
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = - 30 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 30 V, TJ = 175 °C
-
-
- 150
On-State Drain Currenta
ID(on)
VGS = - 10 V
VDS- 5 V
- 30
-
-
VGS = - 10 V
ID = - 10 A
-
0.0070
0.0085
VGS = - 10 V
ID = - 10 A, TJ = 125 °C
-
-
0.0130
VGS = - 10 V
ID = - 10 A, TJ = 175 °C
-
-
0.0150
VGS = - 4.5 V
ID = - 7 A
-
0.0160
0.0200
-
32
-
S
-
712
890
pF
-
75
113
-
9.5
-
-
19
-
6
12.82
20
-
38
57
-
82
123
-
134
201
-
178
214
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VDS = - 10 V, ID = - 10 A
μA
A

Dynamicb
Output Capacitance
Coss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = - 10 V
VDS = - 15 V, f = 1 MHz
VDS = - 15 V, ID = - 10 A
f = 1 MHz
td(on)
tr
td(off)
VDD = - 15 V, RL = 1.5 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
tf
nC

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 3 A, VGS = 0 V
-
-
- 84
A
-
- 0.75
- 1.2
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTM4483
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-2
0.005
10-3
TJ = 25 °C
10-4
IGSS - Gate Current (A)
IGSS - Gate Current (A)
0.004
0.003
0.002
10-5
TJ = 150 °C
10-6
10-7
TJ = 25 °C
10-8
0.001
10-9
10-10
0
0.000
0
7
14
21
28
35
6
12
18
24
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
30
50
80
VGS = 10 V thru 4 V
40
ID - Drain Current (A)
ID - Drain Current (A)
60
VGS = 3 V
40
30
TC = 25 °C
20
20
10
TC = 125 °C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3000
0.05
0.04
2400
VGS = 4.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
0.03
0.02
VGS = 10 V
0.01
1800
1200
Coss
600
0
0.00
0
14
28
42
56
0
70
ID - Drain Current (A)
On-Resistance vs. Drain Current
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
Capacitance
3
30
DTM4483
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 10 A
8
VDS = 15 V
6
4
2
20
40
60
80
100
VGS = 10 V
1.4
VGS = 4.5 V
1.1
0.8
0
25
50
75
100
125
150
175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.10
10
0.08
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 10 A
0.5
- 50 - 25
0
0
1.7
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.06
0.04
TJ = 150 °C
0.02
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
6
8
10
On-Resistance vs. Gate-to-Source Voltage
- 30
VDS - Drain-to-Source Voltage (V)
1.0
0.7
ID = 250 μA
VGS(th) Variance (V)
4
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
0.4
ID = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
2
0
25
50
75
100
125
150
- 32
- 34
- 36
- 38
- 40
- 50 - 25
175
TJ - Temperature (°C)
ID = 1 mA
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4
DTM4483
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
Limited by RDS(on)*
1 ms
10
10 ms
1
0.1
100 ms
1s
10 s, DC
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
100
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
5
100
600
DTM4483
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
6
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
1
Application Note
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
1
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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1