DTM4483 www.din-tek.jp P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET - 30 RDS(on) () at VGS = - 10 V 0.0085 RDS(on) () at VGS = - 4.5 V 0.0200 ID (A) • ESD Protection: 3000 V • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedc - 22 Configuration Single S SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D G 4 G D Top View P-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free and Halogen-free DTM4483 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range V - 22 - 13 IS -6 IDM - 84 IAS - 50 EAS 125 PD TC = 125 °C UNIT 7 2 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 85 RthJF 21 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountb Junction-to-Foot (Drain) Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. 1 °C/W DTM4483 www.din-tek.jp SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VDS VGS = 0 V, ID = - 250 μA - 30 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5 VDS = 0 V, VGS = ± 20 V - - ±1 VDS = 0 V, VGS = ± 12 V - - ±2 V mA Gate-Source Leakage IGSS VGS = 0 V VDS = - 30 V - - -1 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 30 V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 30 V, TJ = 175 °C - - - 150 On-State Drain Currenta ID(on) VGS = - 10 V VDS- 5 V - 30 - - VGS = - 10 V ID = - 10 A - 0.0070 0.0085 VGS = - 10 V ID = - 10 A, TJ = 125 °C - - 0.0130 VGS = - 10 V ID = - 10 A, TJ = 175 °C - - 0.0150 VGS = - 4.5 V ID = - 7 A - 0.0160 0.0200 - 32 - S - 712 890 pF - 75 113 - 9.5 - - 19 - 6 12.82 20 - 38 57 - 82 123 - 134 201 - 178 214 Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VDS = - 10 V, ID = - 10 A μA A Dynamicb Output Capacitance Coss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = - 10 V VDS = - 15 V, f = 1 MHz VDS = - 15 V, ID = - 10 A f = 1 MHz td(on) tr td(off) VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 tf nC ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 3 A, VGS = 0 V - - - 84 A - - 0.75 - 1.2 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTM4483 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 0.005 10-3 TJ = 25 °C 10-4 IGSS - Gate Current (A) IGSS - Gate Current (A) 0.004 0.003 0.002 10-5 TJ = 150 °C 10-6 10-7 TJ = 25 °C 10-8 0.001 10-9 10-10 0 0.000 0 7 14 21 28 35 6 12 18 24 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 30 50 80 VGS = 10 V thru 4 V 40 ID - Drain Current (A) ID - Drain Current (A) 60 VGS = 3 V 40 30 TC = 25 °C 20 20 10 TC = 125 °C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3000 0.05 0.04 2400 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = - 55 °C 0.03 0.02 VGS = 10 V 0.01 1800 1200 Coss 600 0 0.00 0 14 28 42 56 0 70 ID - Drain Current (A) On-Resistance vs. Drain Current 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Capacitance 3 30 DTM4483 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 10 A 8 VDS = 15 V 6 4 2 20 40 60 80 100 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.10 10 0.08 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 10 A 0.5 - 50 - 25 0 0 1.7 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.06 0.04 TJ = 150 °C 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 6 8 10 On-Resistance vs. Gate-to-Source Voltage - 30 VDS - Drain-to-Source Voltage (V) 1.0 0.7 ID = 250 μA VGS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage 0.4 ID = 5 mA 0.1 - 0.2 - 0.5 - 50 - 25 2 0 25 50 75 100 125 150 - 32 - 34 - 36 - 38 - 40 - 50 - 25 175 TJ - Temperature (°C) ID = 1 mA 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature 4 DTM4483 www.din-tek.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 100 μs Limited by RDS(on)* 1 ms 10 10 ms 1 0.1 100 ms 1s 10 s, DC TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 100 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 5 100 600 DTM4483 www.din-tek.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6 Package Information www.din-tek.jp SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 1 Application Note www.din-tek.jp RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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