Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SA2016
PNP PLANAR TRANSISTOR
PNP EPITAXIAL PLANAR
TRANSISTOR

APPLICATIONS
* Relay drivers, lamp drivers, motor drivers, strobes.

FEATURES
*High current capacitance.
*Low collector-to-emitter saturation voltage.
*High-speed switching
*High allowable power dissipation.

ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
2SA2016G-AB3-R
2SA2016L-TN3-R
2SA2016G-TN3-R
Note: Pin Assignment: B: Base C: Collector
E: Emitter

Package
SOT-89
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
MARKING
SOT-89
2SA2016G
TO-252
Date Code
1
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Copyright © 2015 Unisonic Technologies Co., Ltd
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
PNP PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
Collector Dissipation Mounted on a SOT-89
1.3
W
PC
ceramic board (250mm2*0.8mm)
TO-252
1.9
W
SOT-89
3.5
W
Collector Dissipation (TC=25C)
PC
TO-252
15
W
Collector Current
IC
-7
A
Collector Current
ICP
-10
A
Base Current
IB
-1.2
A
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
SOT-89
TO-252
SOT-89
TO-252
θJA
θJC
RATINGS
96.2
65.8
35.7
8.3
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
Collector-to-Base Breakdown Voltage
Collector-to- Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
VBE(SAT)
fT
Cob
tON
tSTG
tF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
IC= -10µA, IE=0
IC= -1mA, RBE=∞
IC=0, IE= -10µA
VCB= -40V, IE=0
VEB= -4V, IC=0
VCE= -2V, IC= -500mA
IC= -3.5A, IB= -175mA
IC= -2A, IB= -40mA
IC= -2A, IB= -40mA
VCE= -10V, IC= -500mA
VCB= -10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
MIN
-50
-50
-6
TYP MAX UNIT
V
V
V
-0.1 µA
-0.1 µA
200
560
-0.23 -0.39 V
-0.24 -0.40 V
-0.83 -1.2
V
290
MHz
50
pF
40
ns
225
ns
25
ns
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PNP PLANAR TRANSISTOR
SWITCHING TIME TEST CIRCUIT
PW=20μs
D.C. 1%
IB2
IB1
INPUT
50Ω
VR
OUTPUT
RB
+
+
100μF
470μF
RL
VBE=5V
VCC= -25V
-20IB1=20IB2=IC= 2.5A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
PNP PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PNP PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
DC Current Gain, hFE
Collector-to-Emitter Saturation
Voltage, VCE(SAT) -mV
Collector Current ,Ic -A
Collector Current Ic -A

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www.unisonic.com.tw
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PNP PLANAR TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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