UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching *High allowable power dissipation. ORDERING INFORMATION Order Number Lead Free Halogen Free 2SA2016G-AB3-R 2SA2016L-TN3-R 2SA2016G-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 TO-252 Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel MARKING SOT-89 2SA2016G TO-252 Date Code 1 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R208-018.E 2SA2016 PNP PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Dissipation Mounted on a SOT-89 1.3 W PC ceramic board (250mm2*0.8mm) TO-252 1.9 W SOT-89 3.5 W Collector Dissipation (TC=25C) PC TO-252 15 W Collector Current IC -7 A Collector Current ICP -10 A Base Current IB -1.2 A Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL SOT-89 TO-252 SOT-89 TO-252 θJA θJC RATINGS 96.2 65.8 35.7 8.3 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER Collector-to-Base Breakdown Voltage Collector-to- Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time VBE(SAT) fT Cob tON tSTG tF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC= -10µA, IE=0 IC= -1mA, RBE=∞ IC=0, IE= -10µA VCB= -40V, IE=0 VEB= -4V, IC=0 VCE= -2V, IC= -500mA IC= -3.5A, IB= -175mA IC= -2A, IB= -40mA IC= -2A, IB= -40mA VCE= -10V, IC= -500mA VCB= -10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit MIN -50 -50 -6 TYP MAX UNIT V V V -0.1 µA -0.1 µA 200 560 -0.23 -0.39 V -0.24 -0.40 V -0.83 -1.2 V 290 MHz 50 pF 40 ns 225 ns 25 ns 2 of 6 QW-R208-018.E 2SA2016 PNP PLANAR TRANSISTOR SWITCHING TIME TEST CIRCUIT PW=20μs D.C. 1% IB2 IB1 INPUT 50Ω VR OUTPUT RB + + 100μF 470μF RL VBE=5V VCC= -25V -20IB1=20IB2=IC= 2.5A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R208-018.E 2SA2016 PNP PLANAR TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R208-018.E 2SA2016 PNP PLANAR TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) DC Current Gain, hFE Collector-to-Emitter Saturation Voltage, VCE(SAT) -mV Collector Current ,Ic -A Collector Current Ic -A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R208-018.E 2SA2016 PNP PLANAR TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R208-018.E