UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES *Low VCE(SAT): VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132. ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1664G-AB3-R 2SD1664G-AE3-R 2SD1664L-TN3-R 2SD1664G-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter ORDERING INFORMATION MARKING SOT-89 SOT-23 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package SOT-89 SOT-23 TO-252 Pin Assignment 1 2 3 B C E E B C B C E Packing Tape Reel Tape Reel Tape Reel TO-252 1 of 4 QW-R208-025.F 2SD1664 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Duty=1/2, PW=20ms) RATING UNIT 40 V 32 V 5 V DC 1 A IC Pulse 2 A SOT-89 0.5 W Collector Power Dissipation PC SOT-23 0.3 W TO-252 1.9 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector Base Breakdown Voltage BVCBO IC= 50μA Collector Emitter Breakdown Voltage BVCEO IC= 1mA Emitter Base Breakdown Voltage BVEBO IE=50μA Collector Cut-Off Current ICBO VCB=20V Emitter Cut-Off Current IEBO VEB= 4V DC Current Gain hFE VCE= 3V, Ic= 100mA Collector-Emitter Saturation Voltage VCE(SAT) IC/IB=500mA /50mA Transition Frequency fT VCE=5V, IE=-50mA, f=100MHz Output Capacitance Cob VCB= 10V, IE= 0A, f=1MHz MIN 40 32 5 TYP 82 0.15 150 15 MAX 0.5 0.5 390 0.4 UNIT V V V μA μA V MHz pF CLASSIFICATION OF hFE RANK RANGE P 82-180 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Q 120-270 R 180-390 2 of 4 QW-R208-025.F 2SD1664 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS 500 Grounded Emitter Propagation Characteristics 500 20 Ta=25°C Ta= 55°C 10 5 2000 1.0mA 200 0.5mA 100 0.2 0.4 0.6 0.8 1.0 1.2 Base-Emitter Voltage, VBE(V) 1.4 1.6 DC Current Gain vs.Collector Current (I) 2.0 DC Current Gain vs.Collector Current (II) VcE= 3V DC Current Gain, hFE DC Current Gain, hFE 0.4 0.8 1.2 1.6 Collector-Emitter Voltage, VCE(V) 1000 500 200 VcE= 3V 100 500 200 Ta=100°C Ta=25°C 100 VcE= 1V 50 Ta= -55°C 50 1 5 10 20 50 100 200 500 1000 Collector Current, IC(mA) 2 1 Collector-Emitter Saturation Voltage vs. Collector Current (I) Ta=25°C 0.2 0.1 IC/IB=50 0.05 IC/IB=20 IC/IB=10 0.02 2 5 10 20 50 100 200 Collector Current, IC(mA) 500 1000 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 5 10 20 50 100 200 500 1000 Collector Current, IC(mA) Collector-Emitter Saturation Voltage vs. Collector Current (II) Collector Saturation Voltage:VCE(SAT) ( V) Collector Saturation Voltage, VCE(SAT) ( V) IB =0mA 2000 1000 0.01 1 Ta=25°C 0 0 Ta=25°C 0.5 1.5mA 300 2 1 0 2.0mA 3.0mA 3.5mA 4.0mA 400 Collector Current, IC(mA) Collector Current, IC(mA) Ta=100°C 100 50 2.5mA 4.5 mA VCE =6V 200 Grounded Emitter Output Characteristics IC/ IB=10 0.5 0.2 0.1 Ta=100°C 0.05 Ta=-40°C Ta=25°C 0.02 0.01 1 2 5 10 20 50 100 200 Collector Current, IC(mA) 500 1000 3 of 4 QW-R208-025.F 2SD1664 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Collector Output Capacitance vs.CollectorBase Voltage Gain Bandwidth Product vs. Emitter Current 100 Ta=25°C Collector Output Capacitance, COB (pF) Transition Frequency, fT(MHz) VCE =5V 200 100 50 20 -1 Ta=25°C f=1MHz IB=0A 50 20 10 5 -2 -5 -10 -20 -50 -100 0.5 1000 2 = PW 10 * ms PW s* DC 0.2 m 00 =1 Collector Current, Ic (A) 1 0.5 0.1 0.05 Ta=25°C 0.02 *Single pulse 0.01 0.1 0.2 0.5 1 2 5 2 5 10 20 Transient Thermal Resistance Safe Operation Area Transient Thermal Resistance, RTH (°C/W) 5 1 Collector to Base Voltage, VCB(V) Emitter Current, IE (mA) 10 20 50 Collector-Emitter Voltage, VCE(V) Ta=25°C 100 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 Time, t(s) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R208-025.F