UNISONIC TECHNOLOGIES CO., LTD MJE13007-Q Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220V switch mode applications. FEATURES * VCEO(SUS) 400V * 700V Blocking Capability ORDERING INFORMATION Ordering Number Lead Free MJE13007L-Q-TA3-T Note: Pin Assignment: B: Base Halogen Free MJE13007G-Q-TA3-T C: Collector E: Emitter Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube MJE13007L-Q-TA3-T (1)Packing Type (1)T: Tube (2)Package Type (2) TA3: TO-220 (3)Lead Free (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-046.a MJE13007-Q Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage SYMBOL RATINGS UNIT VCEO 400 V VCBO 700 V VEBO 9.0 V Continuous IC 8.0 A Collector Current Peak (1) ICM 16 A Continuous IB 4.0 A Base Current Peak (1) IBM 8.0 A Continuous IE 12 A Emitter Current Peak (1) IEM 24 A Power Dissipation (TC = 25°C) PD 80 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT θ 62.5 °C/W Junction to Ambient JA θJC 1.56 °C/W Junction to Case Note: 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%. Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting torque of 6 to 8•lbs. ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER Collector-Emitter Sustaining Voltage SYMBOL VCEO(SUS) Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE1 hFE2 DC Current Gain Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) TEST CONDITIONS IC=10mA, IB=0 VCES=700V VCES=700V, TC=125°C VEB=9.0V, IC=0 IC=2.0A, VCE=5.0V IC=5.0A, VCE=5.0V IC=2.0A, IB=0.4A IC=5.0A, IB=1.0A IC=8.0A, IB=2.0A IC=5.0A, IB=1.0A, TC=100°C IC=2.0A, IB=0.4A IC=5.0A, IB=1.0A IC=5.0A, IB=1.0A, TC=100°C IC=500mA, VCE=10V, f=1.0 MHz VCB=10V, IE=0, f=0.1MHz Current-Gain-Bandwidth Product fT Output Capacitance COB RESISTIVE LOAD (TABLE 1) Delay Time tD VCC=125V, IC=5.0A, Rise Time tR IB1=IB2=1.0A, tP=25μs, Storage Time tS Duty Cycle≤1.0% Fall Time tF Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 400 TYP 8.0 5.0 4.0 14 80 0.025 0.5 1.8 0.23 MAX UNIT V 0.1 mA 1.0 mA 100 μA 40 30 1.0 V 2.0 V 3.0 V 3.0 V 1.2 V 1.6 V 1.5 V MHz pF 0.1 1.5 4.0 0.7 μs μs μs μs 2 of 4 QW-R203-046.a MJE13007-Q NPN SILICON TRANSISTOR TYPICAL THERMAL RESPONSE Transient thermal resistance, r(t) (NORMALIZED) Preliminary There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig. 7 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be debated when TC≥25°C. Second breakdown limitations do not debate the same as thermal limitations. Allowable current at the voltages shown on Fig. 7 may be found at any case temperature by using the appropriate curve on Fig. 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Fig. 8) is discussed in the applications information section. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-046.a MJE13007-Q Preliminary NPN SILICON TRANSISTOR TYPICAL THERMAL RESPONSE(Cont.) Table 1. Test Conditions for Dynamic Performance RESISTIVE SWITCHING CIRCUIT VALUES TEST CIRCUITS REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING VCC=125V RC=25Ω D1=1N5820 OR EQUIV UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-046.a