DCCOM MJE13007

DC COMPONENTS CO., LTD.
R
MJE13007
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high-voltage, high-speed power switching
inductive circuits.
TO-220AB
Pinning
1 = Base
2 = Collector
3 = Emitter
.185(4.70)
.173(4.40)
Φ.151
Typ
.055(1.39)
Φ(3.83)
.045(1.15)
.405(10.28)
.380(9.66)
.295(7.49)
.220(5.58)
o
Absolute Maximum Ratings(TA=25
Characteristic
Symbol
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
o
C)
.625(15.87)
.570(14.48)
Rating
.350(8.90)
.330(8.38)
Unit
VCEX
700
VCEO
400
V
VEBO
9
V
IC
8
A
IB
4
A
V
Total Power Dissipation(TC=25 C)
PD
80
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
.640
Typ
(16.25)
1 2 3
.562(14.27)
.500(12.70)
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.024(0.60)
.014(0.35)
.100
Typ
(2.54)
W
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Collector-Emitter Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
(1)
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
DC Current Gain(1)
(1)Pulse Test: Pulse Width
Symbol
Min
Typ
Max
Unit
BVCEX
700
-
-
V
BVCEO
400
-
-
V
ICEX
-
-
0.1
mA
Test Conditions
IC=1mA, VBE(off)=1.5V
IC=10mA
VCE=700V, VBE(off)=1.5V
IEBO
-
-
0.1
mA
VCE(sat)1
-
-
1
V
IC=2A, IB=400mA
VEB=9V
VCE(sat)2
-
-
2
V
IC=5A, IB=1A
VCE(sat)3
-
-
3
V
IC=8A, IB=2A
VBE(sat)1
-
-
1.2
V
IC=2A, IB=400mA
VBE(sat)2
-
-
1.6
V
IC=5A, IB=1A
hFE1
10
-
40
-
IC=2A, VCE=5V
10
-
30
-
IC=5A, VCE=5V
hFE2
380µs, Duty Cycle 2%