Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SB1216
NPN PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG
APPLICATIONS

FEATURES
* Low collector-to-emitter saturation voltage
* Good linearity of hFE
* Small and slim package facilitating compactness of sets.
* High fT
* Fast switching speed
* Complement the 2SD1816

ORDERING INFORMATION
Ordering Number
Lead Free
2SB1216L-x-TF3-T
Note: Pin assignment: B: Base

Halogen Free
2SB1216G-x-TF3-T
C: Collector
E: Emitter
Package
TO-220F
Pin Assignment
1
2
3
B
C
E
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R225-006.a
2SB1216

NPN PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
DC
PULSE(Note 1)
IC
RATINGS
-120
-100
-6
-4
-8
2
+150
-40 ~ +150
UNIT
V
V
V
A
A
W
C
C
Collector Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
TSTG
Note: 1.Duty=1/2, Pw=20ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Turn-on Time
Storage Time
Fall Time

SYMBOL
BVCBO
BVCEO
BVEBO
VBE(SAT)
VCE(SAT)
ICBO
IEBO
hFE1
hFE2
fT
Cob
tON
tSTG
tF
TEST CONDITIONS
IC =10μA, IE =0
IC =1mA, RB=∞
IE =10μA, IC=0
IC = 2A, IB =0.2A
IC = 2A, IB=0.2A
VCB = 100 V, IE =0
VEB = 4V, IC=0
VCE = 5V, IC = 0.5A
VCE =5V, IC = 3A
VCE =10V, IC =0.5A
VCB =10V, IE =0A, f =1MHz
See test circuit
See test circuit
See test circuit
MIN
-120
-100
-6
TYP
-0.9
-200
70
40
MAX UNIT
V
V
V
-1.2
V
-500 mV
-1
μA
-1
μA
400
130
65
100
800
50
MHz
pF
ns
ns
ns
CLASSIFICATION of hFE1
RANK
RANGE
Q
70 -140
R
100 - 200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
S
140 - 280
T
200 - 400
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QW-R225-006.a
2SB1216

NPN PLANAR TRANSISTOR
TEST CIRCUIT
PW=20μS
Duty Cycle 1%
I B1
INPUT
RB
OUTPUT
I B2
50
VR
+
100µ
+
470µ
-5V
50V
IC=10, IB1= -10, IB2=2A
Unit (resistance:Ω, capacitance: F)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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