UNISONIC TECHNOLOGIES CO., LTD 2SB1216 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816 ORDERING INFORMATION Ordering Number Lead Free 2SB1216L-x-TF3-T Note: Pin assignment: B: Base Halogen Free 2SB1216G-x-TF3-T C: Collector E: Emitter Package TO-220F Pin Assignment 1 2 3 B C E Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R225-006.a 2SB1216 NPN PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO DC PULSE(Note 1) IC RATINGS -120 -100 -6 -4 -8 2 +150 -40 ~ +150 UNIT V V V A A W C C Collector Power Dissipation PD Junction Temperature TJ Storage Temperature TSTG Note: 1.Duty=1/2, Pw=20ms 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Transition Frequency Output Capacitance Turn-on Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO VBE(SAT) VCE(SAT) ICBO IEBO hFE1 hFE2 fT Cob tON tSTG tF TEST CONDITIONS IC =10μA, IE =0 IC =1mA, RB=∞ IE =10μA, IC=0 IC = 2A, IB =0.2A IC = 2A, IB=0.2A VCB = 100 V, IE =0 VEB = 4V, IC=0 VCE = 5V, IC = 0.5A VCE =5V, IC = 3A VCE =10V, IC =0.5A VCB =10V, IE =0A, f =1MHz See test circuit See test circuit See test circuit MIN -120 -100 -6 TYP -0.9 -200 70 40 MAX UNIT V V V -1.2 V -500 mV -1 μA -1 μA 400 130 65 100 800 50 MHz pF ns ns ns CLASSIFICATION of hFE1 RANK RANGE Q 70 -140 R 100 - 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw S 140 - 280 T 200 - 400 2 of 3 QW-R225-006.a 2SB1216 NPN PLANAR TRANSISTOR TEST CIRCUIT PW=20μS Duty Cycle 1% I B1 INPUT RB OUTPUT I B2 50 VR + 100µ + 470µ -5V 50V IC=10, IB1= -10, IB2=2A Unit (resistance:Ω, capacitance: F) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R225-006.a