V23990-P541-*2*-PM datasheet flow PIM 0 600 V / 6 A Features flow 0 housing ● Clip-in housing ● Trench Fieldstop IGBT's for low saturation losses ● Optional w/o BRC Target Applications ● Industrial drives 17mm housing 12mm housing ● Embedded drives Schematic Types ● V23990-P541-A28-PM ● V23990-P541-A29-PM ● V23990-P541-B28-PM ● V23990-P541-B129-PM ● V23990-P541-C29-PM ● V23990-P541-D28-PM ● V23990-P541-D129-PM Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1600 V 32 43 A 200 A 200 A2s 43 66 W 150 °C 600 V 12 12 A 18 A 36 54 W Rectifier Diode Repetitive peak reverse voltage V RRM DC forward current I FAV Surge (non-repetitive) forward current I FSM 2 I2t-value I t Power dissipation P tot Maximum Junction Temperature T j = T jmax T s=80°C T c=80°C t p = 10ms 50 Hz half sine wave T j=25°C T j = T jmax T s=80°C T c=80°C T jmax Inverter\Brake Switch Collector-emitter break down voltage DC collector current Repetitive peak collector current V CE IC I CRM Power dissipation P tot Gate-emitter peak voltage V GE Short circuit ratings t SC V CC Maximum Junction Temperature copyright Vincotech T j = T jmax T s=80°C T c=80°C t p limited by T jmax T j = T jmax T j ≤ 150 °C V GE = 15V T jmax 1 T s=80°C T c=80°C ±20 V 6 360 µs V 175 °C 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V T s=80°C T c=80°C 12 12 A 12 A T s=80°C T c=80°C 27 41 W T jmax 175 °C Storage temperature T stg -40…+125 °C Operation temperature under switching condition T op -40…+(T jmax - 25) °C 4000 V min 12,7 mm min 12,7 \ 9,7 mm Inverter\Brake Diode Peak Repetitive Reverse Voltage DC forward current Repetitive peak forward current Power dissipation Maximum Junction Temperature V RRM IF I FRM P tot T j=T jmax t p limited by T jmax T j=T jmax Thermal Properties Insulation Properties Insulation voltage V is t=2s DC voltage Creepage distance Clearance Comparative tracking index copyright Vincotech 17mm \ 12mm housing CTI >200 2 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Characteristic Values Parameter Conditions Symbol V GE [V] or V GS [V] V r [V] or V CE [V] or V DS [V] Value I C [A] or I F [A] or Tj [°C] I D [A] Unit Min Typ Max 0,8 1,20 1,17 0,88 0,76 11 20 1,45 Rectifier Diode Forward voltage VF 25 Threshold voltage (for power loss calc. only) V to 25 Slope resistance (for power loss calc. only) rt 25 Reverse current Ir Thermal resistance junction to sink 1600 R th(j-s) phase-change material ʎ = 3,4 W/mK V GE(th) VCE=VGE 25 125 25 125 25 125 25 145 V V mΩ 1,1 1,61 mA K/W Inverter\Brake Switch Gate emitter threshold voltage Collector-emitter saturation voltage Collector-emitter cut-off current incl. Diode V CEsat I GES Integrated Gate resistor R gint Turn-on delay time t d(on) Rise time Turn-off delay time Fall time 6 0 600 20 0 tf E on Turn-off energy loss E off Input capacitance C ies Output capacitance C oss Reverse transfer capacitance C rss Gate charge QG R th(j-s) 25 125 25 125 25 125 25 125 5 5,8 6,5 1 1,52 1,7 2,1 0,06 350 none tr t d(off) Turn-on energy loss Thermal resistance junction to sink 15 I CES Gate-emitter leakage current 0,00009 Rgoff=16 Ω Rgon=32 Ω 300 ±15 6 25 125 25 125 25 125 25 125 25 125 25 125 V V mA nA Ω 12 10 8 11 118 134 87 116 0,07 0,10 0,15 0,19 ns mWs 368 f=1MHz 0 25 ±15 480 28 25 pF 11 6 25 phase-change material ʎ = 3,4 W/mK 42 nC 2,66 K/W Inverter\Brake Diode Diode forward voltage Peak reverse recovery current Reverse recovery time Reverse recovered charge Peak rate of fall of recovery current Reverse recovered energy Thermal resistance junction to sink copyright Vincotech VF 6 I RRM t rr Q rr Rgon=32 Ω 300 ( di rf/dt )max E rec R th(j-s) phase-change material ʎ = 3,4 W/mK 6 25 125 25 125 25 125 25 125 25 125 25 125 1 1,64 1,56 8 8 73 163 0,23 0,43 569 338 0,04 0,09 3,5 3 2,5 V A ns µC A/µs mWs K/W 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Characteristic Values Parameter Conditions Symbol V GE [V] or V GS [V] V r [V] or V CE [V] or V DS [V] Value I C [A] or I F [A] or Tj [°C] I D [A] Min Typ Unit Max Thermistor Rated resistance R Deviation of R100 Δ R/R Power dissipation P Tc=100 -5 Power dissipation constant B (25/50) Tol. ±3% B-value B (25/100) Tol. ±3% Vincotech NTC Reference % mW 25 1,5 mW/K 25 3962 K 25 4000 25 4 Ω 5 5 25 B-value copyright Vincotech 22000 25 R100=1486 Ω K I 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Characteristics Inverter\Brake Figure 1 Typical output characteristics I C = f(V CE) Inverter\Brake Switch Figure 2 Typical output characteristics I C = f(V CE) 25 IC (A) IC (A) 25 Inverter\Brake Switch 20 20 15 15 10 10 5 5 0 0 0 1 At tp = Tj = V GE from 2 3 V CE (V) 4 0 At tp = Tj = V GE from 250 µs 25 °C 7 V to 17 V in steps of 1 V Figure 3 Typical transfer characteristics I C = f(V GE) Inverter\Brake Switch 1 2 3 V CE (V) 5 250 µs 125 °C 7 V to 17 V in steps of 1 V Figure 4 Typical diode forward current as a function of forward voltage I F = f(V F) Inverter\Brake Diode 10 IF (A) IC (A) 7 4 6 8 5 6 4 3 4 2 2 Tj = Tjmax-25°C 1 Tj = Tjmax-25°C Tj = 25°C Tj = 25°C 0 0 0 At tp = V CE = 1 2 250 10 copyright Vincotech 3 4 5 6 7 8 V 9GE (V) 10 0,0 At tp = µs V 5 0,5 250 1,0 1,5 V F (V) 2,0 µs 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Characteristics Inverter\Brake Figure 5 Typical switching energy losses as a function of collector current E = f(I C) Inverter\Brake Switch Figure 6 Typical switching energy losses as a function of gate resistor E = f(R G) E (mWs) 0,4 E (mWs) 0,30 Inverter\Brake Switch Eoff High T 0,25 Eon High T 0,3 Eoff Low T 0,20 Eon High T Eon Low T Eoff High T 0,2 0,15 Eon Low T Eoff Low T 0,10 0,1 0,05 0,0 0,00 0 2 4 6 8 10 I C (A) 0 12 50 100 150 200 250 R G( Ω ) 300 With an inductive load at Tj = °C 25/125 25/125 V CE = 300 V V GE = 15 V R gon = 32 Ω R goff = 16 Ω With an inductive load at Tj = °C 25/125 25/125 V CE = 300 V V GE = 15 V IC = 6 A Figure 7 Inverter\Brake Diode Typical reverse recovery energy loss as a function of collector current E rec = f(I C) Figure 8 Inverter\Brake Diode Typical reverse recovery energy loss as a function of gate resistor E rec = f(R G) 0,12 E (mWs) E (mWs) 0,15 Tj = Tjmax -25°C 0,10 0,12 Erec 0,08 0,09 Tj = Tjmax -25°C Erec 0,06 Tj = 25°C Erec 0,06 0,04 Erec 0,03 0,02 Tj = 25°C 0,00 0,00 0 2 4 6 8 10 I C (A) 0 12 With an inductive load at 25/125 Tj = 25/125 °C V CE = 300 V V GE = 15 V R gon = 32 Ω copyright Vincotech 50 100 150 200 250 R ( Ω ) G 300 With an inductive load at 25/125 Tj = 25/125 °C V CE = 300 V V GE = 15 V IC = 6 A 6 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Characteristics Inverter\Brake Figure 9 Typical switching times as a function of collector current t = f(I C) Inverter\Brake Switch Figure 10 Typical switching times as a function of gate resistor t = f(R G) 1,00 t ( µs) t ( µs) 1,00 Inverter\Brake Switch tdoff tdoff tf 0,10 0,10 tf tdon tr tdon 0,01 0,01 tr 0,00 0,00 0 2 4 6 8 10 I C (A) 12 0 With an inductive load at Tj = 125 °C V CE = 300 V V GE = 15 V R gon = 32 Ω R goff = 16 Ω 50 100 150 200 250 R G ( Ω ) 300 With an inductive load at Tj = 125 °C V CE = 300 V V GE = 15 V IC = 6 A Figure 11 Typical reverse recovery time as a function of collector current t rr = f(I C) Inverter\Brake Diode Figure 12 Inverter\Brake Diode Typical reverse recovery time as a function of IGBT turn on gate resistor t rr = f(R gon) t rr( µs) 0,4 t rr( µs) 0,25 trr 0,20 0,3 trr Tj = Tjmax -25°C Tj = Tjmax -25°C 0,15 trr 0,2 0,10 trr Tj = 25°C Tj = 25°C 0,1 0,05 0,0 0,00 0 At Tj = V CE = V GE = R gon = 2 25/125 25/125 300 15 32 copyright Vincotech 4 6 8 10 I C (A) 0 12 At Tj = VR = IF= V GE = °C V V Ω 7 50 25/125 25/125 300 6 15 100 150 200 250 R g on ( Ω ) 300 °C V A V 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Characteristics Inverter\Brake Figure 13 Inverter\Brake Diode Typical reverse recovery charge as a function of collector current Q rr = f(I C) Figure 14 Inverter\Brake Diode Typical reverse recovery charge as a function of IGBT turn on gate resistor Q rr = f(R gon) 0,6 Qrr(mC) 0,5 Tj = Tjmax -25°C Qrr( µC) Qrr 0,5 Qrr 0,4 0,4 Tj = Tjmax -25°C 0,3 Qrr Tj = 25°C 0,3 Qrr 0,2 0,2 Tj = 25°C 0,1 0,1 0,0 0,0 0 At At Tj = V CE = V GE = R gon = 2 4 25/125 25/125 300 15 32 6 8 10 I C (A) 0 12 50 At Tj = VR = IF= V GE = °C V V Ω Figure 15 Inverter\Brake Diode Typical reverse recovery current as a function of collector current I RRM = f(I C) 25/125 25/125 300 6 15 100 150 200 250 R g on ( Ω) 300 °C V A V Figure 16 Inverter\Brake Diode Typical reverse recovery current as a function of IGBT turn on gate resistor I RRM = f(R gon) 12 IrrM (A) IrrM (A) 10 Tj = Tjmax -25°C 8 IRRM 10 IRRM IRRM IRRM Tj = Tjmax - 25°C 8 Tj = 25°C 6 Tj = 25°C 6 4 4 2 2 0 0 0 At Tj = V CE = V GE = R gon = 2 25/125 25/125 300 15 32 copyright Vincotech 4 6 8 10 I C (A) 12 0 At Tj = VR = IF= V GE = °C V V Ω 8 50 25/125 25/125 300 6 15 100 150 200 250 R gon ( Ω ) 300 °C V A V 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Characteristics Inverter\Brake Figure 17 Typical rate of fall of forward and reverse recovery current as a function of collector current dI 0/dt ,dI rec/dt = f(I C) Inverter\Brake Diode Figure 18 Inverter\Brake Diode Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor dI 0/dt ,dI rec/dt = f(R gon) 1400 dI0/dt dIrec/dt direc / dt (A/ µs) direc / dt (A/µ s) 1000 dI0/dt dIrec/dt 1200 800 1000 600 800 600 400 400 200 200 0 0 0 At Tj = V CE = V GE = R gon = 2 25/125 25/125 300 15 32 4 6 8 10 I C (A) 0 12 At Tj = VR = IF= V GE = °C V V Ω Figure 19 IGBT transient thermal impedance as a function of pulse width Z thJH = f(t p) Inverter\Brake Switch 50 25/125 25/125 300 6 15 100 150 200 °C V A V Figure 20 FWD transient thermal impedance as a function of pulse width Z thJH = f(t p) Inverter\Brake Diode 101 ZthJH (K/W) Zth-JH (K/W) 101 250 R ( Ω ) 300 gon 100 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10-2 10-2 10-5 At D = R thJH = 10-4 10-3 10-2 10-1 100 t p (s) 10110 tp/T 2,66 K/W 10-5 10-4 At D = R thJH = tp/T 3,50 10-3 10-2 10-1 FWD thermal model values Phase change interface R (K/W) 0,07 0,34 0,93 0,64 0,44 0,37 R (K/W) 0,08 0,41 2,02 0,53 0,27 0,19 copyright Vincotech 9 t p (s) 10110 K/W IGBT thermal model values Phase change interface Tau (s) 3,3E+00 3,8E-01 8,3E-02 1,3E-02 2,6E-03 3,2E-04 100 Tau (s) 1,4E+01 7,0E-01 1,2E-01 2,0E-02 4,1E-03 7,3E-04 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Characteristics Inverter\Brake Figure 21 Power dissipation as a function of heatsink temperature P tot = f(T h) Inverter\Brake Switch Figure 22 Collector current as a function of heatsink temperature I C = f(T h) 15 IC (A) Ptot (W) 70 Inverter\Brake Switch 60 12 50 9 40 30 6 20 3 10 0 0 0 At Tj = 50 175 100 150 T h ( o C) 200 0 At Tj = V GE = °C Figure 23 Power dissipation as a function of heatsink temperature P tot = f(T h) Inverter\Brake Diode 50 175 15 100 T h ( o C) 200 °C V Figure 24 Forward current as a function of heatsink temperature I F = f(T h) Inverter\Brake Diode 15 IF (A) Ptot (W) 60 150 50 12 40 9 30 6 20 3 10 0 0 0 At Tj = 50 175 copyright Vincotech 100 150 T h ( o C) 200 0 At Tj = °C 10 50 175 100 150 T h ( o C) 200 °C 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Characteristics Inverter\Brake Figure 25 Safe operating area as a function of collector-emitter voltage I C = f(V CE) Inverter\Brake Switch Figure 26 Gate voltage vs Gate charge Inverter\Brake Switch V GE = f(Q GE) 18 IC (A) VGE (V) 103 1mS 10mS 16 10uS 100uS 100mS DC 102 14 120V 480V 12 10 101 8 6 4 100 2 0 10-1 100 At D = Th = V GE = Tj = 101 V CE (V) 102 0 103 At IC = single pulse 80 ºC 15 V T jmax ºC Figure 27 Inverter\Brake Switch 10 20 6 30 50 Q g (nC) 60 A Figure 28 Short circuit withstand time as a function of gate-emitter voltage t sc = f(V GE) 40 Inverter\Brake Switch Typical short circuit collector current as a function of gate-emitter voltage V GE = f(Q GE) 100 IC(sc) tsc (µS) 16 14 80 12 10 60 8 40 6 4 20 2 0 0 10 At V CE = Tj ≤ 11 12 600 V 150 ºC copyright Vincotech 13 14 V GE (V) 12 15 At V CE ≤ Tj = 11 14 16 400 V 150 ºC 18 V GE (V) 20 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Figure 29 Reverse bias safe operating area IGBT I C = f(V CE) IC (A) 15 IC MAX 12 Ic CHIP Ic MODULE 9 VCE MAX 6 3 0 0 100 200 300 400 At T jmax-25 Tj = Uccminus=Uccplus ºC Switching mode : 3 level switching copyright Vincotech 500 600 700 V CE (V) 12 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Rectifier Diode Figure 1 Typical diode forward current as a function of forward voltage I F= f(V F) Rectifier diode Figure 2 Diode transient thermal impedance as a function of pulse width Z thJH = f(t p) Rectifier diode 101 IF (A) ZthJC (K/W) 100 80 100 60 40 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 20 Tj = Tjmax-25°C Tj = 25°C 0 0,0 0,5 1,0 1,5 2,0 10-2 V F (V) At tp = 250 µs Figure 3 Power dissipation as a function of heatsink temperature P tot = f(T h) Rectifier diode 10-5 10-4 At D = R thJH = 10-3 tp/T 1,61 10-2 10-1 t p (s) 10110 K/W Figure 4 Forward current as a function of heatsink temperature I F = f(T h) 100 100 Rectifier diode Ptot (W) IF (A) 60 50 80 40 60 30 40 20 20 10 0 0 0 At Tj = 30 150 copyright Vincotech 60 90 120 T h ( o C) 0 150 At Tj = ºC 13 30 150 60 90 120 T h ( o C) 150 ºC 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Thermistor Figure 1 Typical NTC characteristic as a function of temperature R T = f(T ) Thermistor NTC-typical temperature characteristic R/Ω 24000 20000 16000 12000 8000 4000 0 25 copyright Vincotech 50 75 100 T (°C) 125 14 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Switching Definitions Inverter General Tj R gon R goff conditions = 125 °C = 32 Ω = 16 Ω Figure 1 Inverter Switch Turn-off Switching Waveforms & definition of t doff, t Eoff (t E off = integrating time for E off) Figure 2 Inverter Switch Turn-on Switching Waveforms & definition of t don, t Eon (t E on = integrating time for E on) 125 240 tdoff % IC % VCE 200 100 VCE 90% VGE 90% 160 75 IC 120 VCE 50 tEoff 80 tdon 25 VGE 40 IC 1% VGE VGE 10% 0 0 -25 -0,2 tEon -40 0 0,2 0,4 0,6 3 time (us) V GE (0%) = V GE (100%) = V C (100%) = I C (100%) = t doff = t E off = 0 15 300 6 0,13 0,44 V V V A µs µs 3,05 V GE (0%) = V GE (100%) = V C (100%) = I C (100%) = t don = t E on = Figure 3 Inverter Switch Turn-off Switching Waveforms & definition of t f 3,1 0 15 300 6 0,01 0,13 3,15 time(us) 3,2 V V V A µs µs Figure 4 Inverter Switch Turn-on Switching Waveforms & definition of t r 120 240 fitted % VCE 3% IC 10% VCE IC % 100 200 IC 90% 80 160 60 120 IC 60% 40 VCE IC 90% 80 IC 40% 20 tr 40 IC10% 0 -20 -0,1 Ic 0 tf IC 10% -40 0 V C (100%) = I C (100%) = tf = copyright Vincotech 0,1 300 6 0,12 0,2 0,3 time (us) 0,4 3 V A µs V C (100%) = I C (100%) = tr = 15 3,05 3,1 300 6 0,01 3,15 time(us) 3,2 V A µs 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Switching Definitions Output Inverter Figure 5 Inverter Switch Turn-off Switching Waveforms & definition of t Eoff Figure 6 Inverter Switch Turn-on Switching Waveforms & definition of t Eon 125 200 % IC 1% 100 160 Eoff Poff Pon % 75 120 Eon 50 80 25 40 VGE 90% VGE 10% 0 0 tEoff -25 -0,1 VCE 3% tEon -40 0 0,1 0,2 0,3 0,4 0,5 2,9 time (us) P off (100%) = E off (100%) = t E off = 1,79 0,19 0,44 kW mJ µs 3 P on (100%) = E on (100%) = t E on = 3,1 1,79 0,10 0,13 3,2 time(us) 3,3 kW mJ µs Figure 7 Inverter Switch Turn-off Switching Waveforms & definition of t rr 120 Id % 80 trr 40 Vd 0 fitted IRRM 10% -40 -80 -120 IRRM 90% IRRM 100% -160 2,8 2,9 3 3,1 3,2 3,3 3,4 time(us) V d (100%) = I d (100%) = I RRM (100%) = t rr = copyright Vincotech 16 300 6 8 0,16 V A A µs 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Switching Definitions Output Inverter Figure 8 Inverter Diode Turn-on Switching Waveforms & definition of t Qrr (t Q rr = integrating time for Q rr) Figure 9 Inverter Diode Turn-on Switching Waveforms & definition of t Erec (t Erec= integrating time for E rec) 150 125 % % Id 100 tQrr 50 tErec 75 Qrr 0 Erec 100 50 25 -50 Prec 0 -100 -25 -150 2,8 I d (100%) = Q rr (100%) = t Q rr = copyright Vincotech 3 3,2 6 0,43 0,33 3,4 time(us) 2,8 3,6 A µC µs P rec (100%) = E rec (100%) = t E rec = 17 3 3,2 1,79 0,09 0,33 3,4 time(us) 3,6 kW mJ µs 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version Ordering Code without thermal paste 12mm housing with solder pins V23990-P541-A28-PM without thermal paste 17mm housing with solder pins V23990-P541-A29-PM without thermal paste 12mm housing with solder pins with 2-leg Rectifier V23990-P541-B28-PM without thermal paste 17mm housing with solder pins with 2-leg Rectifier V23990-P541-B129-PM without thermal paste 17mm housing with solder pins w/o BRC with 2-leg Rectifier V23990-P541-C29-PM without thermal paste 12mm housing with solder pins w/o BRC V23990-P541-D28-PM without thermal paste 17mm housing with solder pins w/o BRC with 2-leg Rectifier V23990-P541-D129-PM VIN Date code Name&Ver UL Lot Serial VIN WWYY NNNNNNNVV UL LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Text Datamatrix Outline Pin table Pinout variation Pin X Y Function Module subtype Not assembled pins 1 25,5 2,7 NTC1 P541-A28 - 2 25,5 0 NTC2 P541-A29 - 3 22,8 0 -DC P541-B28 21 4 20,1 0 BRCG P541-B129 23 5 16,2 0 BRCE P541-C29 4,5,20 6 13,5 0 G6 P541-D28 21 7 10,8 0 E6 P541-D129 4,5,20,23 8 8,1 0 G5 9 5,4 0 E5 10 2,7 0 G4 11 0 0 E4 12 0 19,8 G1 13 0 22,5 U 14 7,5 19,8 G2 15 7,5 22,5 V 16 15 19,8 G3 17 15 22,5 W 18 22,8 22,5 +INV 19 25,5 22,5 +DC 20 33,5 22,5 BRC+ 21 33,5 15 L1 22 33,5 7,5 L2 23 33,5 0 L3 copyright Vincotech 18 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Ordering Code and Marking - Outline - Pinout Pinout Identification ID Component Voltage Current Function T1,T2,T3,T4,T5,T6 IGBT 600 V 6A Inverter Switch D1,D2,D3,D4,D5,D6 FWD 600 V 6A Inverter Diode T7 IGBT 600 V 6A Brake Switch D13 FWD 600 V 6A Brake Diode D7,D8,D9,D10,D11,D12 Rectifier 1600 V 25 A Rectifier Diode NTC NTC copyright Vincotech Comment Thermistor 19 29 Feb. 2016 / Revision 6 V23990-P541-*2*-PM datasheet Packaging instruction Standard packaging quantity (SPQ) >SPQ 135 Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Package data Package data for flow 0 packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website. Document No.: Date: Modification: Pages V23990-P541-x2x-D6-14 29 Feb. 2016 New Brand, PCM Rth values all DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 20 29 Feb. 2016 / Revision 6