APTGF50DDA60T3G Dual Boost chopper NPT IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR2 CR1 23 8 Q1 Q2 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 65 50 230 ±20 250 Tj = 125°C 100A@500V TC = 25°C TC = 80°C TC = 25°C Unit V July, 2006 7 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF50DDA60T3G – Rev 2 22 VCES = 600V IC = 50A @ Tc = 80°C APTGF50DDA60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Tj = 25°C Tj = 125°C T VGE =15V j = 25°C IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Tf Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz IF VF Min Test Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge 250 500 2.45 VR=600V IF = 60A VR = 400V di/dt =200A/µs www.microsemi.com µA V V nA Max Unit pF nC ns 12 42 10 ns 130 21 0.5 mJ 1 Typ Max Unit V Tj = 25°C Tj = 125°C Tc = 70°C IF = 60A IF = 120A IF = 60A Unit 6 400 600 DC Forward Current Diode Forward Voltage Typ 2200 323 200 166 20 100 40 9 Max 120 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 2.0 2.2 4 Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A R G = 2.7Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A R G = 2.7Ω VGE = 15V Tj = 125°C VBus = 400V IC = 50A Tj = 125°C R G = 2.7Ω Symbol Characteristic IRM 1.7 VGE = 15V VBus = 300V IC = 50A Chopper diode ratings and characteristics VRRM Typ VGE = 0V VCE = 600V Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Min 250 500 Tj = 125°C 60 1.6 1.9 1.4 Tj = 25°C 130 Tj = 125°C Tj = 25°C 170 220 Tj = 125°C 920 µA A 1.8 V July, 2006 ICES Test Conditions ns nC 2-6 APTGF50DDA60T3G – Rev 2 Symbol Characteristic APTGF50DDA60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.5 0.9 Unit T: Thermistor temperature Thermal and package characteristics VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Symbol Characteristic RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF50DDA60T3G – Rev 2 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTGF50DDA60T3G Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 150 TJ=-55°C 250µs Pulse Test < 0.5% Duty cycle Ic, Collector Current (A) TJ=25°C 100 TJ=125°C 50 0 250µs Pulse Test < 0.5% Duty cycle 100 TJ=25°C 50 TJ=125°C 0 0 1 2 3 4 0 1 2 3 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 125 100 75 50 TJ=125°C 25 TJ=-55°C TJ=25°C 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=100A 5 4 3 Ic=50A 2 1 Ic=25A 0 6 8 10 12 14 14 VCE=300V 12 VCE =480V 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 8 VCE=120V IC = 50A TJ = 25°C 16 10 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) 0 4 Gate Charge 18 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 150 On state Voltage vs Junction Temperature 4 3.5 Ic=100A 3 2.5 Ic=50A 2 1.5 Ic=25A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 16 -50 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 80 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 70 60 July, 2006 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) TJ=-55°C 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 4-6 APTGF50DDA60T3G – Rev 2 Ic, Collector Current (A) 150 APTGF50DDA60T3G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VGE = 15V 50 40 Tj = 125°C VCE = 400V RG = 2.7Ω 30 20 0 25 50 75 100 125 200 175 150 VGE=15V, TJ=125°C 125 100 75 50 150 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 400V R G = 2.7Ω tf, Fall Time (ns) tr, Rise Time (ns) VGE=15V, T J=125°C 125 150 40 T J = 125°C 30 20 TJ = 25°C 0 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 0 150 1.5 Eoff, Turn-off Energy Loss (mJ) TJ=125°C, VGE=15V VCE = 400V R G = 2.7Ω 1 0.5 0 0 25 50 75 100 125 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 2 E on, Turn-On Energy Loss (mJ) 100 10 10 2.5 VCE = 400V VG E = 15V RG = 2.7Ω 2 TJ = 125°C 1.5 1 0.5 0 150 0 ICE, Collector to Emitter Current (A) 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 3 120 V CE = 400V V GE = 15V TJ= 125°C Eon, 50A 2 1.5 Eoff, 50A 1 0.5 100 80 July, 2006 2.5 IC , Collector Current (A) Switching Energy Losses (mJ) 75 VCE = 400V, VGE = 15V, RG = 2.7Ω 50 40 20 50 Current Fall Time vs Collector Current 60 30 25 ICE, Collector to Emitter Current (A) 60 50 VGE=15V, TJ =25°C VCE = 400V RG = 2.7Ω 60 40 20 Eon, 50A 0 0 0 5 10 15 20 Gate Resistance (Ohms) 25 www.microsemi.com 0 200 400 600 VCE , Collector to Emitter Voltage (V) 5-6 APTGF50DDA60T3G – Rev 2 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 60 APTGF50DDA60T3G Capacitance vs Collector to Emitter Voltage Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) C, Capacitance (pF) 10000 Cies 1000 Coes Cres 100 0 10 20 30 40 50 240 VCE = 400V D = 50% RG = 2.7Ω TJ = 125°C TC= 75°C 200 160 120 80 ZCS ZVS hard switching 40 0 0 VCE, Collector to Emitter Voltage (V) 20 40 60 80 100 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF50DDA60T3G – Rev 2 July, 2006 Thermal Impedance (°C/W) 0.6