VS-30TPS..PbF Series, VS-30TPS..-M3 Series Datasheet

VS-30TPS..PbF Series, VS-30TPS..-M3 Series
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 30 A
FEATURES
2
(A)
• Designed and qualified
JEDEC®-JESD47
according
to
• 125 °C max. operating junction temperature
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912
3
2
1
1 (K) (G) 3
TO-247AC
Available
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
charge
PRODUCT SUMMARY
Package
TO-247AC
Diode variation
Single SCR
IT(AV)
20 A
VDRM/VRRM
800 V, 1200 V
VTM
1.3 V
DESCRIPTION
IGT
45 mA
TJ
-40 °C to 125 °C
The VS-30TPS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
VALUES
UNITS
20
A
IRMS
30
VRRM/VDRM
800/1200
V
300
A
1.3
V
dV/dt
500
V/μs
dI/dt
150
A/μs
- 40 to 125
°C
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VS-30TPS08PbF, VS-30TPS08-M3
800
900
VS-30TPS12PbF, VS-30TPS12-M3
1200
1300
ITSM
VT
20 A, TJ = 25 °C
TJ
VOLTAGE RATINGS
PART NUMBER
10
Revision: 06-Feb-14
Document Number: 94386
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle
non-repetitive surge current
ITSM
TEST CONDITIONS
TC = 95 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
310
10 ms sine pulse, no voltage reapplied
442
4420
I2t
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
Maximum on-state voltage drop
VTM
20 A, TJ = 25 °C
Threshold voltage
Maximum reverse and direct leakage current
Maximum holding current
Maximum latching current
rt
VT(TO)
IRM/IDM
TJ = 125 °C
TJ = 25 °C
VR = Rated VRRM/VDRM
TJ = 125 °C
UNITS
20
30
Maximum I2t for fusing
On-state slope resistance
VALUES
A
A2s
A2s
1.3
V
12
m
1.0
V
0.5
10
mA
IH
Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C
IL
Anode supply = 6 V, resistive load, TJ = 25 °C
200
TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open
500
V/µs
150
A/µs
VALUES
UNITS
Maximum rate of rise of off-state voltage
dV/dt
Maximum rate of rise of turned-on current
dI/dt
150
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
PGM
8.0
Maximum average gate power
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum peak gate power
Maximum required DC gate current to trigger
Maximum required DC gate 
voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V, resistive load, TJ = - 10 °C
60
Anode supply = 6 V, resistive load, TJ = 25 °C
45
Anode supply = 6 V, resistive load, TJ = 125 °C
20
Anode supply = 6 V, resistive load, TJ = - 10 °C
2.5
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
TJ = 125 °C, VDRM = Rated value
W
mA
V
0.25
2.0
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
0.9
4
µs
110
Revision: 06-Feb-14
Document Number: 94386
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VS-30TPS..PbF Series, VS-30TPS..-M3 Series
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance, 
junction to case
RthJC
Maximum thermal resistance, 
junction to ambient
RthJA
Maximum thermal resistance, 
case to heatsink
RthCS
TEST CONDITIONS
°C
0.8
Mounting surface, smooth and greased
0.2
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
30TPS08
Case style TO-247AC (JEDEC)
130
30TPS.. Series
R thJC (DC) = 0.8 °C/ W
120
Conduction Angle
110
30°
60°
90°
100
120°
180°
90
5
°C/W
40
10
15
20
25
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
-40 to 125
6
Marking device
0
UNITS
DC operation
Approximate weight
Mounting torque
VALUES
30TPS12
130
30TPS.. Series
RthJC (DC) = 0.8 °C/ W
120
110
Conduction Period
100
30°
90
60°
90°
120°
180° DC
80
0
5
10
15
20
25
30
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
35
Revision: 06-Feb-14
Document Number: 94386
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VS-30TPS..PbF Series, VS-30TPS..-M3 Series
Vishay Semiconductors
60
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
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180°
120°
90°
60°
30°
50
40
RMS Limit
30
20
Conduction Angle
30TPS.. Series
TJ= 125°C
10
0
0
5
10
15
20
25
280
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial TJ = 125°C
@
60 Hz 0.0083 s
240
@50 Hz 0.0100 s
260
220
200
180
160
140
120
30
1
80
DC
180°
120°
90°
60°
30°
40 RMS Limit
Conduction Period
20
30TPS.. Series
TJ = 125°C
0
10
20
30
40
100
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
0
10
Numb er Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
Average On-state Current (A)
60
30TPS.. Series
50
300
Maximum Non Repetitive Surge Current
Versus Pulse Tra in Duration. Control
Of Conduc tion May Not Be Ma intained.
Initial TJ= 125°C
No Voltage Reapplied
Rated VRRMReapplied
280
260
240
220
200
180
160
140
30TPS.. Series
120
0.01
0.1
1
Average On-state Current (A)
Pulse Train Duration (s)
Fig. 4 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
TJ= 25°C
TJ= 125°C
100
10
30TPS.. Series
1
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Revision: 06-Feb-14
Document Number: 94386
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VS-30TPS..PbF Series, VS-30TPS..-M3 Series
Transient Thermal Impedance Z thJC (°C/ W)
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1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
Single Pulse
30TPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Rec tangular gate p ulse
a )Rec ommend ed loa d line for
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommend ed load line for
<= 30% rated di/ dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a )
(b )
VGD
IGD
0.1
0.001
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
0.1
(2)
(1)
Frequency Limited by PG(AV)
30TPS.. Series
0.01
(3)
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Revision: 06-Feb-14
Document Number: 94386
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-30TPS..PbF Series, VS-30TPS..-M3 Series
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ORDERING INFORMATION TABLE
Device code
VS-
30
T
P
S
12
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (30 = 30 A)
3
-
Circuit configuration:
4
-
T = Thyristor
Package:
P = TO-247
5
-
Type of silicon:
S = Standard recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
Environmental digit:
08 = 800 V
12 = 1200 V
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-30TPS08PbF
25
500
Antistatic plastic tubes
VS-30TPS08-M3
25
500
Antistatic plastic tubes
VS-30TPS12PbF
25
500
Antistatic plastic tubes
VS-30TPS12-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95542
TO-247AC PbF
www.vishay.com/doc?95226
TO-247AC -M3
www.vishay.com/doc?95007
Revision: 06-Feb-14
Document Number: 94386
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Plating
(4)
E1
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
ØK
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c
Revision: 07-Apr-15
Document Number: 95223
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247 - 50 mils L/F
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Plating
(4)
E1
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
ØK
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
Revision: 21-Apr-15
Document Number: 95542
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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