VISHAY VS-30TPS16PBF

VS-30TPS16PbF, VS-30TPS16-M3
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 30 A
FEATURES
2
(A)
• High voltage (up to 1600 V)
• Designed and
JEDEC-JESD47
qualified
according
to
• 125 °C max. operating junction temperature
TO-247AC
1 (K) (G) 3
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
PRODUCT SUMMARY
Package
TO-247AC
Diode variation
Single SCR
IT(AV)
20 A
VDRM/VRRM
1600 V
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
charge
DESCRIPTION
VTM
1.3 V
IGT
45 mA
TJ
- 40 °C to 125 °C
The VS-30TPS16... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
VALUES
UNITS
20
A
IRMS
30
VRRM/VDRM
1600
V
ITSM
300
A
1.3
V
500
V/μs
20 A, TJ = 25 °C
VT
dV/dt
150
A/μs
- 40 to 125
°C
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
1600
1700
10
dI/dt
TJ
VOLTAGE RATINGS
PART NUMBER
VS-30TPS16PbF, VS-30TPS16-M3
Revision: 18-Jun-13
Document Number: 94387
1
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VS-30TPS16PbF, VS-30TPS16-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle, 
non-repetitive surge current
ITSM
TEST CONDITIONS
TC = 95 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
310
10 ms sine pulse, no voltage reapplied
442
4420
I2t
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
Maximum on-state voltage drop
VTM
20 A, TJ = 25 °C
Threshold voltage
Maximum reverse and direct leakage current
Maximum holding current
Maximum latching current
rt
VT(TO)
IRM/IDM
IH
IL
Maximum rate of rise of off-state voltage
dV/dt
Maximum rate of rise of turned-on current
dI/dt
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C
UNITS
20
30
Maximum I2t for fusing
On-state slope resistance
VALUES
A
A2s
A2s
1.3
V
12
m
1.0
V
0.5
10
150
mA
Anode supply = 6 V, resistive load, TJ = 25 °C
200
TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open
500
V/µs
150
A/µs
VALUES
UNITS
TRIGGERING
PARAMETER
TEST CONDITIONS
SYMBOL
PGM
8.0
Maximum average gate power
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum peak gate power
Maximum required DC gate current to trigger
Maximum required DC gate 
voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V, resistive load, TJ = - 10 °C
60
Anode supply = 6 V, resistive load, TJ = 25 °C
45
Anode supply = 6 V, resistive load, TJ = 125 °C
20
Anode supply = 6 V, resistive load, TJ = - 10 °C
2.5
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
TJ = 125 °C, VDRM = Rated value
W
mA
V
0.25
2.0
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
Revision: 18-Jun-13
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
0.9
4
µs
110
Document Number: 94387
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS16PbF, VS-30TPS16-M3
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance, 
junction to case
RthJC
Maximum thermal resistance, 
junction to ambient
RthJA
Maximum thermal resistance, 
case to heatsink
RthCS
TEST CONDITIONS
VALUES
UNITS
- 40 to 125
°C
0.8
DC operation
Mounting surface, smooth and greased
0.2
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
30TPS.. Series
R thJC (DC) = 0.8 °C/ W
120
Conduction Angle
110
30°
60°
90°
100
120°
180°
90
0
5
10
15
20
25
Maximum Average On-state Power Loss (W)
Case style TO-247AC (JEDEC)
30TPS16
60
180°
120°
90°
60°
30°
50
40
RMS Limit
30
20
Conduction Angle
30TPS.. Series
TJ= 125°C
10
0
0
5
10
15
20
25
30
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
130
30TPS.. Series
RthJC (DC) = 0.8 °C/ W
120
110
Conduction Period
100
30°
90
60°
90°
120°
180° DC
80
0
5
10
15
20
25
30
35
Maximum Average On-state Power Loss (W)
Maximum Allow able Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Marking device
130
°C/W
40
80
DC
180°
120°
90°
60°
30°
60
40 RMSLimit
Conduction Period
20
30TPS.. Series
TJ = 125°C
0
0
10
20
30
40
50
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Revision: 18-Jun-13
Document Number: 94387
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS16PbF, VS-30TPS16-M3
Vishay Semiconductors
280
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
260
Initial TJ = 125°C
@60 Hz 0.0083 s
240
@50 Hz 0.0100 s
220
200
180
160
140
30TPS.. Series
120
1
10
300
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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280
260
240
Maximum Non Repetitive Surge Current
Versus Pulse Tra in Duration. Control
Of Conduc tion May Not Be Maintained.
Initial TJ= 125°C
No Voltage Reap plied
Rated VRRMReapplied
220
200
180
160
140
30TPS.. Series
120
0.01
100
Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N)
0.1
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
TJ= 25°C
TJ= 125°C
100
10
30TPS.. Series
1
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (°C/ W)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
Single Pulse
30TPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 18-Jun-13
Document Number: 94387
4
For technical questions within your region: [email protected], Diodes[email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS16PbF, VS-30TPS16-M3
www.vishay.com
Vishay Semiconductors
Rec tangular gate pulse
a)Rec ommended load line for
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/ dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
VGD
IGD
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
0.01
(2)
(1)
Frequenc y Limited by PG(AV)
30TPS.. Series
0.1
0.001
(3)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
30
T
P
S
16
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (30 = 30 A)
3
-
Circuit configuration:
T = Thyristor
4
-
Package:
P = TO-247
5
-
Type of silicon:
S = Standard recovery rectifier
6
-
Voltage rating (16 = 1600 V)
7
-
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-30TPS16PbF
25
500
Antistatic plastic tubes
VS-30TPS16-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Revision: 18-Jun-13
www.vishay.com/doc?95223
TO-247AC PbF
www.vishay.com/doc?95226
TO-247AC -M3
www.vishay.com/doc?95007
Document Number: 94387
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Ø P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
FP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
Planting
(4)
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
FK
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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VS-30TPS16PBF