VS-ST1200C..K Series Datasheet

VS-ST1200C..K Series
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Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 1650 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-24 (K-PUK)
• High profile hockey PUK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
A-24 (K-PUK)
• DC motor controls
• Controlled DC power supplies
PRODUCT SUMMARY
Package
A-24 (K-PUK)
Diode variation
Single SCR
IT(AV)
1650 A
VDRM/VRRM
1200 V, 1400 V, 1600 V, 1800 V, 2000 V
VTM
1.73 V
IGT
100 mA
TJ
-40 °C to 125 °C
• AC controllers








MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
A
55
°C
3080
A
25
°C
30 500
60 Hz
32 000
50 Hz
4651
60 Hz
4250
Typical
TJ
UNITS
1650
50 Hz
VDRM/VRRM
tq
VALUES
A
kA2s
1200 to 2000
V
200
μs
-40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST1200C..K
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
12
1200
1300
14
1400
1500
16
1600
1700
18
1800
1900
20
2000
2100
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
100
Revision: 09-Jan-15
Document Number: 94394
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VS-ST1200C..K Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
IT(AV)
IT(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
Maximum
for fusing
I2t
A
55 (85)
°C
3080
No voltage
reapplied
30 500
100 % VRRM 
reapplied
25 700
No voltage
reapplied
32 000
Sinusoidal half wave,
initial TJ = TJ maximum
4651
4250
3300
t = 0.1 ms to 10 ms, no voltage reapplied
46 510
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.91
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ = TJ maximum
1.01
Low level value of on-state slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.21
High level value of on-state slope resistance
rt2
(I >  x IT(AV)), TJ = TJ maximum
0.19
Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.73
VTM
IH
Typical latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
3000
VT(TO)1
Maximum holding current
A
26 900
Low level value of threshold voltage
Maximum on-state voltage
UNITS
1650 (700)
100 % VRRM 
reapplied
t = 8.3 ms
I2t
VALUES
600
1000
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 , tr  1 μs
TJ = TJ maximum, anode voltage  80 % VDRM
VALUES
UNITS
1000
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.9
Typical turn-off time
tq
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, 
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
200
SYMBOL
TEST CONDITIONS
VALUES
UNITS
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of 
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and 
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
100
mA
Revision: 09-Jan-15
Document Number: 94394
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1200C..K Series
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TYP.
TJ = TJ maximum, tp  5 ms
16
TJ = TJ maximum, f = 50 Hz, d% = 50
3
VGT
DC gate voltage not to trigger
VGD
V
-
100
200
50
-
1.4
-
TJ = 25 °C
1.1
3.0
TJ = 125 °C
0.9
-
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
TJ = -40 °C
IGD
A
20
200
TJ = 25 °C
IGT
DC gate current not to trigger
W
5.0
TJ = 125 °C
DC gate voltage required to trigger
UNITS
3.0
TJ = TJ maximum, tp  5 ms
TJ = -40 °C
DC gate current required to trigger
MAX.
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
TJ
-40 to 125
TStg
-40 to 150
RthJ-hs
Maximum thermal resistance,
case to heatsink
TEST CONDITIONS
RthC-hs
DC operation single side cooled
0.0.42
DC operation double side cooled
0.021
DC operation single side cooled
0.006
DC operation double side cooled
K/W
0.003
Mounting force, ± 10 %
Approximate weight
Case style
°C
See dimensions - link at the end of datasheet
24 500
(2500)
N
(kg)
425
g
A-24 (K-PUK)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.003
0.003
0.002
0.002
120°
0.004
0.004
0.004
0.004
90°
0.005
0.005
0.005
0.005
60°
0.007
0.007
0.007
0.007
30°
0.012
0.012
0.012
0.012
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 09-Jan-15
Document Number: 94394
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1200C..K Series
130
Vishay Semiconductors
ST1200C..K Series
(Single Side Cooled)
RthJ-hs (DC) = 0.042 K/W
120
110
100
90
Conduction Angle
80
30°
60°
70
90°
60
120°
180°
50
40
0
200
400
600
800 1000 1200
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
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130
ST1200C..K Series
(Double Side Cooled)
R thJ-hs (DC) = 0.021 K/W
120
110
100
90
80
Conduction Period
70
60
50
30°
60° 90°
40
30
20
120° 180°
0
110
100
90
80
Conduction Period
70
60
30°
50
60°
90°
120°
180°
40
30
20
0
400
800
1200
DC
1600
2000
4000
180°
120°
90°
60°
30°
RMS Limit
3500
3000
2500
2000
1500
1000
Conduction Angle
500
ST1200C..K Series
T J = 125°C
0
0
Average On-state Current (A)
110
100
90
Conduction Angle
80
70
30°
60
60°
50
90°
40
30
0
400
800
1200
120°
180°
1600
800
1200
1600
2000
2000
Fig. 5 - On-State Power Loss Characteristics
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
ST1200C..K Series
(Double Side Cooled)
R thJ-hs (DC) = 0.021 K/W
120
400
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
130
3600
Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
ST1200C..K Series
(Single Side Cooled)
R thJ-hs (DC) = 0.042 K/W
120
DC
1800 2400 3000
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
130
600 1200
5000
DC
180°
120°
90°
60°
30°
4000
3000
RMS Limit
2000
Conduction Period
1000
0
ST1200C..K Series
TJ = 125°C
0
600 1200 1800 2400 3000 3600
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
Revision: 09-Jan-15
Document Number: 94394
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1200C..K Series
28000
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
26000
24000
22000
20000
18000
16000
ST1200C..K Series
14000
12000
1
10
100
32000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
28000
No Voltage Reapplied
26000
Rated VRRM Reapplied
30000
24000
22000
20000
18000
16000
14000
ST1200C..K Series
12000
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instantaneous On-state Current (A)
10000
1000
TJ = 25°C
TJ = 125°C
ST1200C..K Series
100
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJ-hs (K/W)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
0.01
Steady State Value
R thJ-hs = 0.042 K/W
(Single Side Cooled)
R thJ-hs = 0.021 K/W
(Double Side Cooled)
(DC Operation)
0.001
0.001
ST1200C..K Series
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 09-Jan-15
Document Number: 94394
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1200C..K Series
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10
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(a)
(b)
VGD
Tj=-40 °C
Tj=25 °C
1
Tj=125 °C
Instantaneous Gate Voltage (V)
100
Vishay Semiconductors
(1) (2) (3)
IGD Device: ST1200C..K Series
0.1
0.001
0.01
0.1
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
ST
120
0
C
20
K
1
-
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
0 = Converter grade
5
-
C = Ceramic PUK
6
-
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
7
-
K = PUK case A-24 (K-PUK)
8
-
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
9
-
Critical dV/dt:
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95081
Revision: 09-Jan-15
Document Number: 94394
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
A-24 (K-PUK)
DIMENSIONS in millimeters (inches)
Creepage distance: 28.88 (1.137) minimum
Strike distance: 17.99 (0.708) minimum
1 (0.04) MIN.
2 places
47.5 (1.87) DIA. MAX.
2 places
Pin receptable
AMP. 60598-1
27.5 (1.08) MAX.
67 (2.6) DIA. MAX.
20° ± 5°
74.5 (2.9) DIA. MAX.
4.75 (0.2) NOM.
44 (1.73)
2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95081
Revision: 02-Aug-07
For technical questions, contact: [email protected]
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Revision: 02-Oct-12
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Document Number: 91000