Previous Datasheet Index Next Data Sheet Bulletin I25196/A ST1200C..K SERIES PHASE CONTROL THYRISTORS Hockey Puk Version 1650A Features Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk Typical Applications DC motor controls Controlled DC power supplies AC controllers case style A-24 (K-PUK) Major Ratings and Characteristics Parameters ST1200C..K Units 1650 A 55 °C 3080 A 25 °C @ 50Hz 30500 A @ 60Hz 32000 A @ 50Hz 4651 KA2s @ 60Hz 4250 KA2s 1200 to 2000 V 200 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t V DRM /V RRM tq TJ typical To Order Previous Datasheet Index Next Data Sheet ST1200C..K Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM , max. repetitive VRSM , maximum non- I DRM/I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max V V mA 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 Type number ST1200C..K 100 On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM 2 I t ST1200C..K Units Conditions 1650 (700) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled 3080 DC @ 25°C heatsink temperature double side cooled Max. peak, one-cycle 30500 t = 10ms No voltage non-repetitive surge current 32000 t = 8.3ms reapplied 25700 t = 10ms 100% VRRM 26900 t = 8.3ms reapplied Sinusoidal half wave, 4651 t = 10ms No voltage Initial T J = TJ max. t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 2 Maximum I t for fusing 4250 A KA2s 3300 3000 I √t 2 Maximum I √t for fusing 2 V T(TO) 1 Low level value of threshold voltage V T(TO)2 High level value of threshold 46510 KA √s 2 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.91 V 1.01 (I > π x IT(AV)),TJ = TJ max. 0.21 (16.7% x π x IT(AV) < I < π x IT(AV) ), TJ = TJ max. voltage r t1 Low level value of on-state slope resistance r t2 High level value of on-state slope resistance t = 0.1 to 10ms, no voltage reapplied mΩ (I > π x IT(AV) ),TJ = TJ max. 0.19 V TM Max. on-state voltage 1.73 IH Maximum holding current 600 IL Typical latching current 1000 V Ipk= 4000A, TJ = TJ max, t p = 10ms sine pulse mA T J = 25°C, anode supply 12V resistive load To Order Previous Datasheet Index Next Data Sheet ST1200C..K Series Switching Parameter di/dt ST1200C..K Max. non-repetitive rate of rise 1000 of turned-on current t d Typical delay time Units Conditions A/µs Typical turn-off time TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di g /dt = 1A/µs 1.9 µs tq Gate drive 20V, 20Ω, tr ≤ 1µs 200 Vd = 0.67% VDRM, TJ = 25°C ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs Blocking Parameter dv/dt Maximum critical rate of rise of IRRM IDRM Max. peak reverse and off-state leakage current ST1200C..K Units Conditions 500 off-state voltage V/µs TJ = TJ max. linear to 80% rated VDRM 100 mA TJ = TJ max, rated V DRM /VRRM applied Triggering Parameter PGM ST1200C..K Maximum peak gate power Max. peak positive gate current +VGM Maximum peak positive 3 3.0 Maximum peak negative TJ = TJ max, t p ≤ 5ms V TJ = TJ max, tp ≤ 5ms TYP. MAX. 200 - 100 200 50 - TJ = 125°C 1.4 - TJ = - 40°C 1.1 3.0 0.9 - TJ = - 40°C DC gate current required to trigger VGT A 5.0 gate voltage IGT TJ = TJ max, t p ≤ 5ms TJ = TJ max, f = 50Hz, d% = 50 20 gate voltage -VGM W 16 PG(AV) Maximum average gate power IGM Units Conditions DC gate voltage required to trigger mA V TJ = 25°C Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 25°C TJ = 125°C IGD DC gate current not to trigger 10 mA VGD DC gate voltage not to trigger 0.25 V TJ = TJ max To Order Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Previous Datasheet Index Next Data Sheet ST1200C..K Series Thermal and Mechanical Specification Parameter ST1200C..K TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, Units °C 0.042 junction to heatsink DC operation single side cooled K/W 0.021 RthC-hs Max. thermal resistance, 0.006 case to heatsink 0.003 Mounting force, ± 10% 24500 N (2500) (Kg) Approximate weight 425 g Case style A-24 (K-PUK) F wt Conditions K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side 180° 0.003 0.003 0.002 0.002 120° 0.004 0.004 0.004 0.004 90° 0.005 0.005 0.005 0.005 60° 0.007 0.007 0.007 0.007 30° 0.012 0.012 0.012 0.012 Units Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 120 1 2 0 C 20 K 1 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - K = Puk Case A-24 (K-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L = 1000V/µsec (Special selection) To Order Previous Datasheet Index Next Data Sheet ST1200C..K Series Outline Table 1 (0.04) MIN. TWO PLACES 47.5 (1.87) DIA. MAX. 27.5 (1.08) MAX. TWO PLACES PIN RECEPTACLE AMP. 60598-1 Case Style A-24 (K-PUK) 67 (2.6) DIA. MAX. All dimensions in millimeters (inches) 20° ± 5° 74.5 (2.9) DIA. MAX. 4.75 (0.2) NOM. 44 (1.73) 2 HOLES DIA. 3.5 (0.14) x 2.1 (0.1) DEEP Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) CREPAGE DESTANCE 28.88 (1.137) MIN. STRIKE DISTANCE 17.99 (0.708) MIN. 130 ST1200C..K Series (Single Side Cooled ) RthJ-hs(DC) = 0.042 K/ W 120 110 100 90 Conduc tion Angle 80 30° 60° 70 90° 60 120° 180° 50 40 0 200 400 600 800 1000 1200 ST1200C..K Series (Single Side Cooled) RthJ-hs(DC) = 0.042 K/ W 120 110 100 90 Conduction Period 80 70 60 30° 50 40 60° 90° 120° 30 180° 20 0 400 800 1200 DC 1600 2000 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 130 To Order Fig. 2 - Current Ratings Characteristics Previous Datasheet Index Next Data Sheet 130 ST1200C..K Series (Double Side Cooled) RthJ-hs(DC) = 0.021 K/W 120 110 100 90 Conduc tion Angle 80 70 30° 60 60° 90° 50 120° 180° 40 30 0 400 800 1200 1600 2000 Maximum Allowa ble Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) ST1200C..K Series 130 ST1200C..K Series (Double Side Cooled) RthJ-hs(DC) = 0.021 K/ W 120 110 100 90 Conduction Period 80 70 60 50 40 30 30° 0 500 1000 1500 2000 2500 3000 3500 RMS Limit 2500 2000 1500 Conduction Angle 1000 ST1200C..K Series TJ = 125°C 500 0 0 400 800 1200 1600 Maximum Average On-state Power Loss(W) Maximum Average On-state Power Loss (W) Fig. 4 - Current Ratings Characteristics 180° 120° 90° 60° 30° 3000 5000 DC 180° 120° 90° 60° 30° 4000 3000 RMS Limit 2000 Conduction Period ST1200C..K Series TJ = 125°C 1000 0 0 2000 Average On-state Current (A) 24000 22000 20000 18000 16000 14000 ST1200C..K Series 12000 1 10 Fig. 6- On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 26000 500 1000 1500 2000 2500 3000 3500 Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics 28000 DC Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 3500 180° 20 Average On-state Current (A) 4000 90° 60° 120° 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 32000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 28000 Initial TJ = 125°C No Voltage Reapplied 26000 Rated VRRMReapplied 24000 30000 22000 20000 18000 16000 14000 12000 0.01 ST1200C..K Series 0.1 1 Pulse Train Duration (s) To Order Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Previous Datasheet Index Next Data Sheet ST1200C..K Series Instantaneous On-state Current (A) 10000 1000 TJ = 25°C TJ = 125°C ST1200C..K Series 100 0.5 1 1.5 2 2.5 3 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/ W) Fig. 9 - On-state Voltage Drop Characteristics 0.1 Steady State Value R thJ-hs = 0.042 K/ W (Single Side Cooled) R thJ-hs = 0.021 K/ W (Double Side Cooled) 0.01 (DC Operation) ST1200C..K Series 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30%rated di/dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 16W, tp = 4ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (a) (b) IGD 0.1 0.001 0.01 Tj=-40 °C VGD Tj=25 °C 1 Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) Device: ST1200C..K Series 0.1 (3) Frequency Limited by PG(AV) 1 10 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics To Order 100