VS-ST1280C..K Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey-PUK Version), 2310 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case A-24 (K-PUK) • High profile hockey PUK • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor controls A-24 (K-PUK) • Controlled DC power supplies • AC controllers PRODUCT SUMMARY Package A-24 (K-PUK) Diode variation Single SCR IT(AV) 2310 A VDRM/VRRM 400 V, 600 V VTM 1.44 V IGT 100 mA TJ -40 °C to 125 °C MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 °C 4150 A 25 °C 42 500 60 Hz 44 500 50 Hz 9027 60 Hz 8240 Typical TJ UNITS 2310 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 600 V 200 μs -40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST1280C..K VOLTAGE CODE VRSM, MAXIMUM IDRM/IRRM MAXIMUM VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V V mA 04 400 500 06 600 700 100 Document Number: 93718 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 18-Dec-13 VS-ST1280C..K Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t VALUES 2310 (885) A 55 (85) °C 4150 No voltage reapplied 42 500 100 % VRRM reapplied 35 700 No voltage reapplied 44 500 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied 9027 8241 6383 90 270 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.83 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.90 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.077 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.068 Ipk = 8000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.44 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 5828 VT(TO)1 Maximum holding current A 37 400 Low level value of threshold voltage Maximum on-state voltage UNITS 600 1000 kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.9 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs 200 SYMBOL TEST CONDITIONS VALUES UNIT S μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA Document Number: 93718 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 18-Dec-13 VS-ST1280C..K Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS typ. TJ = TJ maximum, tp ≤ 5 ms 16 TJ = TJ maximum, f = 50 Hz, d% = 50 3 TJ = TJ maximum, tp ≤ 5 ms IGT TJ = 25 °C 20 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = -40 °C DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD A V 5.0 TJ = 125 °C 200 - 100 200 50 - 1.4 - TJ = 25 °C 1.1 3.0 TJ = 125 °C 0.9 - TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 3.0 TJ = -40 °C DC gate current required to trigger max. mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.042 DC operation double side cooled 0.021 DC operation single side cooled 0.006 DC operation double side cooled 0.003 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 24 500 (2500) N (kg) 425 g A-24 (K-PUK) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.003 0.003 0.002 0.002 120° 0.004 0.004 0.004 0.004 90° 0.005 0.005 0.005 0.005 60° 0.007 0.007 0.007 0.007 30° 0.012 0.012 0.012 0.012 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93718 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 18-Dec-13 VS-ST1280C..K Series 130 Vishay Semiconductors ST1280C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 110 100 90 Conduction Angle 80 70 30˚ 60 60˚ 90˚ 50 120˚ 180˚ 40 0 400 800 1200 1600 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 130 ST1280C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 80 Conduction Period 70 60 30˚ 50 40 30 90˚ 120˚ 180˚ 20 0 Average On-state current (A) 110 100 90 80 Conduction Period 70 60 30˚ 50 60˚ 90˚ 40 120˚ 30 180˚ DC 20 0 500 1000 1500 2000 2500 100 90 Conduction Angle 80 70 60 50 30˚ 60˚ 40 90˚ 120˚ 180˚ 30 0 5000 3200 180˚ 120˚ 90˚ 60˚ 30˚ 2800 2400 2000 500 1000 1500 2000 2500 3000 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics RMS Limit 1600 1200 Conduction Angle 800 ST1280C..K Series T J = 125˚C 400 0 0 500 1000 1500 2000 2500 3000 Fig. 5 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) ST1280C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 110 4000 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 120 3000 3600 Average On-state current (A) 130 2000 Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) ST1280C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 1000 DC Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 130 60˚ 5000 4500 DC 180˚ 120˚ 90˚ 60˚ 30˚ 4000 3500 3000 2500 RMS Limit 2000 Conduction Period 1500 1000 ST1280C..K Series TJ = 125˚C 500 0 0 1000 2000 3000 4000 5000 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Document Number: 93718 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 18-Dec-13 VS-ST1280C..K Series 40000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125˚C 35000 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 30000 25000 20000 ST1280C..K Series 15000 1 10 100 45000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125 ˚C 40000 No Voltage Reapplied Rated V RRMReapplied 35000 30000 25000 20000 ST1280C..K Series 15000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 100000 10000 TJ = 25˚C TJ = 125˚C 1000 ST1280C..K Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) (K/W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 Transient Thermal Impedance Z thJ-hs Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) 0.01 (DC Operation) ST1280C..K Series 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 93718 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 18-Dec-13 VS-ST1280C..K Series www.vishay.com 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (1) PGM = 16W, tp = 4ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (a ) (b ) 0.1 0.001 T j= -4 0 °C VG D IG D Tj= 2 5 ° C 1 Tj= 12 5 °C Instantaneous Gate Voltage (V) 100 Vishay Semiconductors ( 1 ) (2) (3) Frequency Limited by PG(AV) Device: ST1280C..K Series 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 128 0 C 06 K 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = Converter grade 5 - C = Ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - K = PUK case A-24 (K-PUK) 8 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95081 Document Number: 93718 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 18-Dec-13 Outline Dimensions Vishay Semiconductors A-24 (K-PUK) DIMENSIONS in millimeters (inches) Creepage distance: 28.88 (1.137) minimum Strike distance: 17.99 (0.708) minimum 1 (0.04) MIN. 2 places 47.5 (1.87) DIA. MAX. 2 places Pin receptable AMP. 60598-1 27.5 (1.08) MAX. 67 (2.6) DIA. MAX. 20° ± 5° 74.5 (2.9) DIA. MAX. 4.75 (0.2) NOM. 44 (1.73) 2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95081 Revision: 02-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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