VS-ST780CL Series Datasheet

VS-ST780CL Series
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Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 1350 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
TO-200AC (B-PUK)
• Controlled DC power supplies
PRODUCT SUMMARY
• AC controllers
Package
TO-200AC (B-PUK)
Diode variation
Single SCR
IT(AV)
1350 A
VDRM/VRRM
400 V, 600 V
VTM
1.31 V
IGT
100 mA
TJ
-40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
VALUES
UNITS
1350
A
55
°C
2700
A
25
°C
50 Hz
24 400
60 Hz
25 600
50 Hz
2986
60 Hz
2726
A
I2t
VDRM/VRRM
tq
Typical
TJv
kA2s
400 to 600
V
150
µs
-40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST780C..L
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
04
400
500
06
600
700
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
80
Revision: 15-Apr-14
Document Number: 94415
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VS-ST780CL Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
IT(AV)
IT(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2√t
for fusing
I2√t
VALUES
1350 (500)
A
55 (85)
°C
2700
24 400
No voltage
reapplied
25 600
100 % VRRM
reapplied
21 500
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
2986
2726
2112
29 860
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.80
High level value of threshold voltage
VT(TO)2
(I > π x IT(AV)), TJ = TJ maximum
0.90
Low level value of on-state slope resistance
rt1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.14
High level value of on-state slope resistance
rt2
(I > π x IT(AV)), TJ = TJ maximum
0.13
Ipk = 3600 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.31
VTM
IH
Typical latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
1928
VT(TO)1
Maximum on-state voltage
A
20 550
Low level value of threshold voltage
Maximum holding current
UNITS
600
1000
kA2√s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 Ω, tr ≤ 1 μs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
VALUES
UNITS
1000
A/µs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs
150
SYMBOL
TEST CONDITIONS
VALUES
UNITS
µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
80
mA
Revision: 15-Apr-14
Document Number: 94415
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VS-ST780CL Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
PGM
Maximum peak gate power
PG(AV)
Maximum average gate power
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TJ = TJ maximum, tp ≤ 5 ms
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp ≤ 5 ms
3.0
TJ = TJ maximum, tp ≤ 5 ms
IGT
TJ = 25 °C
TJ = -40 °C
VGT
DC gate voltage required to trigger
TJ = 25 °C
TJ = 125 °C
IGD
DC gate current not to trigger
TJ = TJ maximum
VGD
DC gate voltage not to trigger
A
V
5.0
Maximum required gate
trigger/current/voltage are the
lowest value which will trigger
all units 12 V anode to cathode
applied
TJ = 125 °C
Maximum gate
current/voltage not to trigger
is the maximum value which
will not trigger any unit with
rated VDRM anode to cathode
applied
UNITS
W
20
TJ = -40 °C
DC gate current required to trigger
MAX.
TYP.
200
-
100
200
50
-
2.5
-
1.8
3.0
1.1
-
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
TEST CONDITIONS
TJ
-40 to 125
TStg
-40 to 150
RthJ-hs
RthC-hs
DC operation single side cooled
0.073
DC operation double side cooled
0.031
DC operation single side cooled
0.011
DC operation double side cooled
K/W
0.006
Mounting force, ± 10 %
Approximate weight
Case style
°C
See dimensions - link at the end of datasheet
14 700
(1500)
N
(kg)
255
g
TO-200AC (B-PUK)
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.009
0.009
0.006
0.006
120°
0.011
0.011
0.011
0.011
90°
0.014
0.014
0.015
0.015
60°
0.020
0.020
0.021
0.021
30°
0.036
0.036
0.036
0.036
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 15-Apr-14
Document Number: 94415
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST780CL Series
130
Vishay Semiconductors
ST780C..L Series
(Single Side Cooled)
R thJ-hs (DC) = 0.073 K/ W
120
110
100
90
Conduction Angle
80
30°
70
60°
90°
60
120°
180°
50
40
0
200
400
600
800
1000
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
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130
ST780C..L Series
(Double Side Cooled)
RthJ-hs (DC) = 0.031 K/ W
120
110
100
90
80
Conduction Period
70
30°
60
60°
50
90°
120°
40
180°
30
DC
20
0
Fig. 4 - Current Ratings Characteristics
ST780C..L Series
(Single Side Cooled)
R thJ-hs (DC) = 0.073 K/ W
110
100
90
Conduction Period
80
70
60
30°
50
60°
40
90°
120°
30
180°
20
0
200
400
600
DC
800 1000 1200 1400
Maximum Average On-state Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
Fig. 1 - Current Ratings Characteristics
120
2500
2000
180°
120°
90°
60°
30°
1500
RMS Limit
1000
Conduc tion Angle
ST780C..L Series
TJ = 125°C
500
0
0
100
90
Conduction Angle
80
70
60
30°
50
60°
40
90°
120°
180°
30
20
0
400
800
1200
1600
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
2000
Maximum Average On-state Power Loss (W)
Maximum Allowable Heatsink Temp erature (°C)
110
800
1200
1600
2000
Fig. 5 - On-State Power Loss Characteristics
ST780C..L Series
(Double Side Cooled)
R thJ-hs (DC) = 0.031 K/ W
120
400
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
130
1000 1500 2000 2500 3000
Average On-state Current (A)
Average On-state Current (A)
130
500
3500
DC
180°
120°
90°
60°
30°
3000
2500
2000
1500
RMS Limit
Conduction Period
1000
ST780C..L Series
TJ = 125°C
500
0
0
500
1000 1500 2000 2500 3000
Average On-state Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 15-Apr-14
Document Number: 94415
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST780CL Series
22000
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
20000
18000
16000
14000
12000
ST780C..L Series
10000
1
10
100
26000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
24000
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
22000
No Voltage Reapplied
Rated VRRMReapplied
20000
18000
16000
14000
12000
ST780C..L Series
10000
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instantaneous On-state Current (A)
10000
TJ = 25°C
1000
TJ = 125°C
ST780C..L Series
100
0.5
1
1.5
2
2.5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJ-hs (K/ W)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
Steady State Value
R thJ-hs = 0.073 K/ W
(Single Side Cooled)
R thJ-hs = 0.031 K/ W
(Double Side Cooled)
0.01
(DC Operation)
ST780C..L Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 15-Apr-14
Document Number: 94415
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST780CL Series
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Vishay Semiconductors
Rec tangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Rec ommended load line for
<=30% rated di/ dt : 10V, 10ohms
10
tr<=1 µs
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
tp = 4ms
tp = 2ms
tp = 1ms
tp = 0.66ms
(a)
(b)
Tj=-40 °C
1
Tj=25 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
100
(2)
(1)
(3) (4)
VGD
IGD
0.1
0.001
Frequenc y Limited by PG(AV)
Device: ST780C..L Series
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
ST
78
0
C
06
L
1
-
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
0 = Converter grade
5
-
C = Ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
L = PUK case TO-200AC (B-PUK)
8
-
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
9
-
Critical dV/dt:
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95076
Revision: 15-Apr-14
Document Number: 94415
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-200AC (B-PUK)
DIMENSIONS in millimeters (inches)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
0.7 (0.03) MIN.
34 (1.34) DIA. MAX.
2 places
27 (1.06) MAX.
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20° ± 5°
58.5 (2.3) DIA. MAX.
4.7 (0.18)
36.5 (1.44)
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95076
Revision: 01-Aug-07
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