VS-ST780CL Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 1350 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AC (B-PUK) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor controls TO-200AC (B-PUK) • Controlled DC power supplies PRODUCT SUMMARY • AC controllers Package TO-200AC (B-PUK) Diode variation Single SCR IT(AV) 1350 A VDRM/VRRM 400 V, 600 V VTM 1.31 V IGT 100 mA TJ -40 °C to 125 °C MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM VALUES UNITS 1350 A 55 °C 2700 A 25 °C 50 Hz 24 400 60 Hz 25 600 50 Hz 2986 60 Hz 2726 A I2t VDRM/VRRM tq Typical TJv kA2s 400 to 600 V 150 µs -40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST780C..L VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 06 600 700 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 80 Revision: 15-Apr-14 Document Number: 94415 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST780CL Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t VALUES 1350 (500) A 55 (85) °C 2700 24 400 No voltage reapplied 25 600 100 % VRRM reapplied 21 500 No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied 2986 2726 2112 29 860 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.80 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.90 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.14 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.13 Ipk = 3600 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.31 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 1928 VT(TO)1 Maximum on-state voltage A 20 550 Low level value of threshold voltage Maximum holding current UNITS 600 1000 kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM VALUES UNITS 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs 150 SYMBOL TEST CONDITIONS VALUES UNITS µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA Revision: 15-Apr-14 Document Number: 94415 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST780CL Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL PGM Maximum peak gate power PG(AV) Maximum average gate power Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp ≤ 5 ms 3.0 TJ = TJ maximum, tp ≤ 5 ms IGT TJ = 25 °C TJ = -40 °C VGT DC gate voltage required to trigger TJ = 25 °C TJ = 125 °C IGD DC gate current not to trigger TJ = TJ maximum VGD DC gate voltage not to trigger A V 5.0 Maximum required gate trigger/current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 °C Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = -40 °C DC gate current required to trigger MAX. TYP. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.073 DC operation double side cooled 0.031 DC operation single side cooled 0.011 DC operation double side cooled K/W 0.006 Mounting force, ± 10 % Approximate weight Case style °C See dimensions - link at the end of datasheet 14 700 (1500) N (kg) 255 g TO-200AC (B-PUK) ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 CONDUCTION ANGLE TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 15-Apr-14 Document Number: 94415 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST780CL Series 130 Vishay Semiconductors ST780C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.073 K/ W 120 110 100 90 Conduction Angle 80 30° 70 60° 90° 60 120° 180° 50 40 0 200 400 600 800 1000 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 130 ST780C..L Series (Double Side Cooled) RthJ-hs (DC) = 0.031 K/ W 120 110 100 90 80 Conduction Period 70 30° 60 60° 50 90° 120° 40 180° 30 DC 20 0 Fig. 4 - Current Ratings Characteristics ST780C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.073 K/ W 110 100 90 Conduction Period 80 70 60 30° 50 60° 40 90° 120° 30 180° 20 0 200 400 600 DC 800 1000 1200 1400 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) Fig. 1 - Current Ratings Characteristics 120 2500 2000 180° 120° 90° 60° 30° 1500 RMS Limit 1000 Conduc tion Angle ST780C..L Series TJ = 125°C 500 0 0 100 90 Conduction Angle 80 70 60 30° 50 60° 40 90° 120° 180° 30 20 0 400 800 1200 1600 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 2000 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temp erature (°C) 110 800 1200 1600 2000 Fig. 5 - On-State Power Loss Characteristics ST780C..L Series (Double Side Cooled) R thJ-hs (DC) = 0.031 K/ W 120 400 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 130 1000 1500 2000 2500 3000 Average On-state Current (A) Average On-state Current (A) 130 500 3500 DC 180° 120° 90° 60° 30° 3000 2500 2000 1500 RMS Limit Conduction Period 1000 ST780C..L Series TJ = 125°C 500 0 0 500 1000 1500 2000 2500 3000 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 15-Apr-14 Document Number: 94415 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST780CL Series 22000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 20000 18000 16000 14000 12000 ST780C..L Series 10000 1 10 100 26000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 24000 Of Conduction May Not Be Maintained. Initial TJ = 125°C 22000 No Voltage Reapplied Rated VRRMReapplied 20000 18000 16000 14000 12000 ST780C..L Series 10000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 TJ = 25°C 1000 TJ = 125°C ST780C..L Series 100 0.5 1 1.5 2 2.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/ W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 Steady State Value R thJ-hs = 0.073 K/ W (Single Side Cooled) R thJ-hs = 0.031 K/ W (Double Side Cooled) 0.01 (DC Operation) ST780C..L Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 15-Apr-14 Document Number: 94415 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST780CL Series www.vishay.com Vishay Semiconductors Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Rec ommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (2) (1) (3) (4) VGD IGD 0.1 0.001 Frequenc y Limited by PG(AV) Device: ST780C..L Series 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 78 0 C 06 L 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = Converter grade 5 - C = Ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - L = PUK case TO-200AC (B-PUK) 8 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95076 Revision: 15-Apr-14 Document Number: 94415 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AC (B-PUK) DIMENSIONS in millimeters (inches) Creepage distance: 36.33 (1.430) minimum Strike distance: 17.43 (0.686) minimum 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. 2 places 27 (1.06) MAX. Pin receptacle AMP. 60598-1 0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. 20° ± 5° 58.5 (2.3) DIA. MAX. 4.7 (0.18) 36.5 (1.44) 2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95076 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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