VS-ST730CL Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 990 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AC (B-PUK) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor controls TO-200AC (B-PUK) • Controlled DC power supplies • AC controllers PRODUCT SUMMARY Package TO-200AC (B-PUK) Diode variation Single SCR IT(AV) 990 A VDRM/VRRM 800 V, 1200 V, 1400 V, 1600 V, 1800 V, 2000 V VTM 1.62 V IGT 100 mA TJ -40 °C to 125 °C MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t VALUES UNITS 990 A 55 °C 2000 A 25 °C 50 Hz 17 800 60 Hz 18 700 50 Hz 1591 60 Hz 1452 VDRM/VRRM kA2s 800 to 2000 tq Typical TJ A V 150 μs -40 to 125 °C VOLTAGE RATINGS TYPE NUMBER VS-ST730CL VOLTAGE CODE VRSM, MAXIMUM VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE V V 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 80 Revision: 15-Apr-14 Document Number: 94414 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST730CL Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t VALUES A 55 (85) °C 2000 No voltage reapplied 17 800 100 % VRRM reapplied 15 000 No voltage reapplied 18 700 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied 1591 1452 1125 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.98 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.12 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.32 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.27 Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.62 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 1027 15 910 VT(TO)1 Maximum holding current A 15 700 Low level value of threshold voltage Maximum on-state voltage UNITS 990 (375) 600 1000 kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs 150 SYMBOL TEST CONDITIONS VALUES UNITS μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA Revision: 15-Apr-14 Document Number: 94414 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST730CL Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM DC gate current required to trigger IGT 10.0 2.0 TJ = TJ maximum, tp ≤ 5 ms 3.0 V TJ = -40 °C 200 - TJ = 25 °C 100 200 TJ = 25 °C IGD TJ = TJ maximum DC gate voltage not to trigger A 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp ≤ 5 ms TJ = 125 °C DC gate current not to trigger Max. TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = -40 °C VGT Typ. TJ = TJ maximum, tp ≤ 5 ms TJ = 125 °C DC gate voltage required to trigger VALUES TEST CONDITIONS 50 - 2.5 - 1.8 3.0 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.073 DC operation double side cooled 0.031 DC operation single side cooled 0.011 DC operation double side cooled K/W 0.006 Mounting force, ± 10 % Approximate weight Case style °C See dimensions - link at the end of datasheet 14 700 (1500) N (kg) 255 g TO-200AC (B-PUK) ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.010 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 CONDUCTION ANGLE 180° TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 15-Apr-14 Document Number: 94414 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST730CL Series 130 Vishay Semiconductors ST730C..L Series (Single Side Cooled) RthJ-hs (DC) = 0.073 K/ W 120 110 100 90 Conduction Angle 80 30° 70 60° 90° 60 120° 180° 50 40 0 100 200 300 400 500 600 700 Maximum Allowable Heatsink Temperat ure (°C) Maximum Allowa ble Heatsink Temperature (°C) www.vishay.com 130 ST730C..L Series (Double Side Cooled) RthJ-hs (DC) = 0.031 K/ W 120 110 100 90 80 Conduction Period 70 30° 60 60° 50 90° 120° 40 30 DC 20 0 110 100 90 80 Conduc tion Period 70 60 30° 50 60° 90° 120° 40 30 180° 20 0 200 400 600 DC 800 1000 1200 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) 120 180° 120° 90° 60° 30° 2000 120 110 100 90 Conduction Angle 80 70 60 50 30° 60° 40 30 90° 120° 180° 20 0 200 400 600 800 1000 1200 1400 RMS Limit 1500 1000 Conduc tion Angle 500 ST730C..L Series TJ = 125°C 0 0 200 400 600 800 1000 1200 1400 Average On-state Current (A) Fig. 5 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) ST730C..L Series (Double Side Cooled) RthJ-hs (DC) = 0.031 K/ W 1200 1600 2000 2400 2500 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 130 800 Fig. 4 - Current Ratings Characteristics Fig. 1 - Current Ratings Characteristics ST730C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.073 K/ W 400 Average On-state Current (A) Average On-state Current (A) 130 180° 3500 DC 180° 120° 90° 60° 30° 3000 2500 2000 RMS Limit 1500 Conduction Period 1000 ST730C..L Series TJ = 125°C 500 0 0 400 800 1200 1600 2000 2400 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics Revision: 15-Apr-14 Document Number: 94414 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST730CL Series 16000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 15000 14000 13000 12000 11000 10000 9000 ST730C..L Series 8000 7000 1 10 100 18000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 16000 Of Conduc tion May Not Be Maintained. Initial TJ = 125°C 15000 No Voltage Reapplied Rated VRRMReapplied 14000 17000 13000 12000 11000 10000 9000 8000 ST730C..L Series 7000 0.01 0.1 1 Pulse Train Duration (s) Numb er Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 TJ = 25°C TJ = 125°C 1000 ST730C..L Series 100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance ZthJ-hs (K/ W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 Steady State Value R thJ-hs = 0.073 K/ W (Single Side Cooled) R thJ-hs = 0.031 K/ W (Double Side Cooled) 0.01 (DC Operation) ST730C..L Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 15-Apr-14 Document Number: 94414 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST730CL Series www.vishay.com Vishay Semiconductors Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Rec ommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (2) (1) (3) (4) VGD IGD 0.1 0.001 Frequenc y Limited by PG(AV) Device: ST730C..L Series 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 73 0 C 20 L 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = Converter grade 5 - C = Ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - L = PUK case TO-200AC (B-PUK) 8 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95076 Revision: 15-Apr-14 Document Number: 94414 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AC (B-PUK) DIMENSIONS in millimeters (inches) Creepage distance: 36.33 (1.430) minimum Strike distance: 17.43 (0.686) minimum 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. 2 places 27 (1.06) MAX. Pin receptacle AMP. 60598-1 0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. 20° ± 5° 58.5 (2.3) DIA. MAX. 4.7 (0.18) 36.5 (1.44) 2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95076 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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