VS-ST733CL Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 940 A FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • Guaranteed high dI/dt • International standard case TO-200AC (B-PUK) • High surge current capability • Low thermal impedance • High speed performance TO-200AC (B-PUK) • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package TO-200AC (B-PUK) Diode variation Single SCR IT(AV) 940 A VDRM/VRRM 400 V, 800 V VTM 1.63 V ITSM at 50 Hz 20 000 A ITSM at 60 Hz 20 950 A IGT 200 mA TC/Ths 55 °C TYPICAL APPLICATIONS • Inverters • Choppers • Induction heating • All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t VALUES UNITS 940 A 55 °C 1900 A 25 °C 50 Hz 20 000 60 Hz 20 950 50 Hz 2000 60 Hz 1820 VDRM/VRRM 400 to 800 tq Range TJ A kA2s V 10 to 20 μs -40 to +125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST733C..L VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 75 Revision: 26-Aug-14 Document Number: 94378 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM ITM 180° el 100 µs 180° el 50 Hz 2200 1900 3580 3100 6800 5920 400 Hz 2050 1660 3600 3130 3750 3240 1000 Hz 1370 1070 2900 2450 2120 1780 2500 Hz 500 370 1220 980 960 770 Recovery voltage VR Voltage before turn-on VD 50 50 50 VDRM VDRM VDRM 50 - - Rise of on-state current dI/dt Heatsink temperature 40 Equivalent values for RC circuit 55 40 10/0.47 UNITS 55 10/0.47 A V A/μs 40 55 °C Ω/μF 10/0.47 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Maximum peak on-state voltage VALUES 940 (350) A 55 (85) °C 1900 No voltage reapplied 20 000 100 % VRRM reapplied 16 800 No voltage reapplied 20 950 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied UNITS A 17 600 2000 1820 1410 kA2s 1290 I2√t t = 0.1 ms to 10 ms, no voltage reapplied VTM ITM = 1700 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.63 20 000 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.09 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.20 Low level value of forward slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.32 High level value of forward slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.29 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000 kA2√s V mΩ mA Revision: 26-Aug-14 Document Number: 94378 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series www.vishay.com Vishay Semiconductors SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned-on current dI/dt Typical delay time TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt Gate pulse: 20 V 20 Ω, 10 μs 0.5 μs rise time td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5 Ω source tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/μs, VR = 50 V, tp = 500 μs, dV/dt: see table in device code minimum Maximum turn-off time TEST CONDITIONS maximum VALUES UNITS 1000 A/μs 1.5 10 μs 20 BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES UNITS 500 V/μs 75 mA VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power SYMBOL PGM PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM Maximum DC gate current required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 60 10 10 TJ = TJ maximum, tp ≤ 5 ms 20 5 TJ = 25 °C, VA = 12 V, Ra = 6 Ω TJ = TJ maximum, rated VDRM applied W A V 200 mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink SYMBOL TEST CONDITIONS TJ -40 to +125 TStg -40 to +150 RthJ-hs RthC-hs DC operation single side cooled 0.073 DC operation double side cooled 0.031 DC operation single side cooled 0.011 DC operation double side cooled Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 0.005 14 700 (1500) N (kg) 255 g TO-200AC (B-PUK) Revision: 26-Aug-14 Document Number: 94378 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series www.vishay.com Vishay Semiconductors ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.021 0.021 0.022 30° 0.036 0.036 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 ST733C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.073 K/W 120 110 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 130 100 90 Conduction Angle 80 30° 70 60° 90° 60 120° 50 180° 40 110 100 90 Conduction Angle 80 70 60 30° 50 60° 90° 40 120° 30 180° 20 0 100 200 300 400 500 600 200 400 600 800 1000 1200 1400 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 130 110 Maximum Allowable Heatsink Temperature (°C) ST733C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.073 K/W 120 100 90 Conduction Period 80 70 60 30° 50 0 700 Average On-state Current (A) 130 Maximum Allowable Heatsink Temperature (°C) ST733C..L Series (Double Side Cooled) R thJ-hs (DC) = 0.031 K/W 120 60° 90° 40 120° 30 180° DC 20 ST733C..L Series (Double Side Cooled) R thJ-hs (DC) = 0.031 K/W 120 110 100 90 Conduction Period 80 70 30° 60 60° 50 90° 40 120° 180° 30 DC 20 0 200 400 600 800 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 1000 0 500 1000 1500 2000 Average On-state Current (A) Fig. 4 - Current Ratings Characteristics Revision: 26-Aug-14 Document Number: 94378 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series www.vishay.com Vishay Semiconductors 20 000 180° 120° 90° 60° 30° 2000 RMS Limit 1500 1000 Conduction Angle 500 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) 2500 400 600 800 16 000 14 000 12 000 ST733C..L Series 0 200 18 000 10 000 ST733C..L Series TJ = 125°C 0 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 8000 0.01 1000 1200 1400 0.1 Average On-state Current (A) Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Maximum Average On-state Power Loss (W) 2500 2000 RMS Limit 1500 1000 Conduction Angle 500 ST733C..L Series TJ = 125°C 0 0 200 400 600 800 1000 1200 Instantaneous On-state Current (A) Fig. 5 - On-State Power Loss Characteristics 180° 120° 90° 60° 30° 10 000 TJ = 25 °C 1000 TJ = 125 °C ST733C..L Series 100 0.5 1400 Average On-state Current (A) 14 000 12 000 10 000 ST733C..L Series 8000 1 10 1.5 2 2.5 3 3.5 4 4.5 Fig. 9 - On-State Voltage Drop Characteristics 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled ZthJ-hs - Transient Thermal Impedance (K/W) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 16 000 1 Instantaneous On-state Voltage (V) Fig. 6 - On-State Power Loss Characteristics 18 000 1 0.1 ST733C..L Series 0.01 Steady State Value R thJ-hs = 0.073 K/W (Single Side Cooled) R thJ-hs = 0.031 K/W (Double Side Cooled) (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJC Characteristics Revision: 26-Aug-14 Document Number: 94378 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series Vishay Semiconductors 450 I TM = 1500 A ST733C..L Series TJ = 125 °C 400 350 300 1000 A 250 500 A 200 150 100 50 0 10 20 30 40 50 60 70 80 90 100 dIFdt - Rate of Fall of On-State Current (A/μs) Irr - Maximum Reverse Recovery Current (A) Qrr - Maximum Reverse Recovery Charge (μC) www.vishay.com Fig. 11 - Reverse Recovered Charge Characteristics 50 Hz 400 200100 1000 1500 2500 3000 1E3 5000 tp ST733C..L Series Sinusoidal pulse TC = 40°C 1E2 1E3 500 A 100 ST733C..L Series TJ = 125 °C 50 0 10 20 30 40 50 60 70 80 90 100 dIFdt - Rate of Fall of Forward Current (A/μs) Snubber circuit RS = 10 Ω CS = 0.47 μF VD = 80 % VDRM 1E4 400 200 100 50 Hz 1000 1500 2500 1E3 3000 5000 1E2 1E1 1000 A 150 1E5 Peak On-state Current (A) Peak On-state Current (A) 1E4 I TM= 1500 A 200 Fig. 12 - Reverse Recovered Current Characteristics 1E5 Snubber circuit RS = 10 Ω CS = 0.47 μF VD = 80 % VDRM 250 tp ST733C..L Series Sinusoidal pulse TC = 55 °C 1E2 1E4 1E1 Pulse Basewidth (μs) 1E2 1E3 1E4 Pulse Basewidth (μs) Fig. 13 - Frequency Characteristics 1E5 Snubber circuit RS = 10 Ω CS = 0.47 μF VD = 80 % VDRM tp ST733C..L Series Trapezoidal pulse TC = 40°C di/dt = 50A/μs 1E4 50 Hz 500 400 200 100 1000 1500 2000 2500 3000 1E3 Peak On-state Current (A) Peak On-state Current (A) 1E5 Snubber circuit RS = 10 Ω CS = 0.47 μF VD = 80 % VDRM 1E4 1000 1500 1E3 500 400 50 Hz 200100 2000 2500 3000 5000 1E2 tp ST733C..L Series Trapezoidal pulse TC = 55 °C di/dt = 50 A/μs 1E2 1E1 1E2 1E3 1E4 1E1 Pulse Basewidth (μs) 1E2 1E3 1E4 Pulse Basewidth (μs) Fig. 14 - Frequency Characteristics Revision: 26-Aug-14 Document Number: 94378 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series www.vishay.com Vishay Semiconductors 1E5 Snubber circuit RS = 10 Ω CS = 0.47 μF VD = 80 % VDRM ST733C..L Series Trapezoidal pulse TC = 40°C di/dt = 50A/μs tp 1E4 500 1000 1500 2000 2500 3000 5000 1E3 400 200 100 Snubber circuit RS = 10 Ω CS = 0.47 μF VD = 80 % VDRM Peak On-state Current (A) Peak On-state Current (A) 1E5 50 Hz ST733C..L Series Trapezoidal pulse T = 55 °C di/dt = 50A/μs tp 1E4 500 100 50 Hz 1000 1500 2000 2500 3000 1E3 1E2 400 200 1E2 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (μs) Pulse Basewidth (μs) Fig. 15 - Frequency Characteristics 1E5 tp ST733C..L Series Sinusoidal pulse 1E4 2 3 5 Peak On-state Current (A) Peak On-state Current (A) 1E5 20 joules per pulse 10 1 1E3 0.5 0.4 0.3 1E2 tp 1E4 1E2 1E3 20 joules per pulse 10 5 3 1E3 2 1 0.5 1E2 0.4 0.3 1E1 1E1 ST733C..L Series Rectangular pulse di/dt = 50 A/μs 1E1 1E4 1E1 Pulse Basewidth (μs) 1E2 1E3 1E4 Pulse Basewidth (μs) Fig. 16 - Maximum On-State Energy Power Loss Characteristics (1) PGM = 10 W, tp = 20 ms (2) PGM = 20 W, tp = 10 ms (3) PGM = 40 W, tp = 5 ms (4) PGM = 60 W, tp = 3.3 ms Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 Ω; tr<= 1 μs 10 (a) TJ = 40 °C 1 (b) TJ = 25 °C b) Recommended load line for <= 30 % rated di/dt : 10 V, 10 Ω tr <= 1 μs TJ = 125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 Device: ST733C..L Series 0.01 0.1 Frequency Limited by PG (AV) 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Revision: 26-Aug-14 Document Number: 94378 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 73 3 C 08 L H K 1 - 1 2 3 4 5 6 7 8 9 10 11 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = fast turn-off 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - L = PUK case TO-200AC (B-PUK) dV/dt - tq combinations available 8 - Reapplied dV/dt code (for tq test condition) 9 - tq code 10 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) dV/dt (V/µs) 10 12 tq (µs) 15 18 20 20 CN CM CL CP CK 50 DN DM DL DP DK 100 EN EM EL EP EK 200 400 FM* FL* HL FP HP FK H 1 = fast-on terminals * Standard part number. (gate and auxiliary cathode unsoldered leads) All other types available only on request. 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 11 - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95076 Revision: 26-Aug-14 Document Number: 94378 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AC (B-PUK) DIMENSIONS in millimeters (inches) Creepage distance: 36.33 (1.430) minimum Strike distance: 17.43 (0.686) minimum 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. 2 places 27 (1.06) MAX. Pin receptacle AMP. 60598-1 0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. 20° ± 5° 58.5 (2.3) DIA. MAX. 4.7 (0.18) 36.5 (1.44) 2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95076 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000