UNISONIC TECHNOLOGIES CO., LTD UTT100N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION 1 The UTC UTT100N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. TO-220 FEATURES * Fast switching speed * 100A, 60V, R DS(ON) = 7mΩ @ V GS =10V * Work below 175°C * 100% avalanche tested * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTT100N06L-TA3-T UTT100N06G-TA3-T TO-220 Note: Pin Assignment: G: Gate D: Drain S: Source UTT100N06L-TA3-T 1 G Pin Assignment 2 3 D S (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220 (3)Lead Free (3) G: Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Packing Tube 1 of 3 QW-R502-509.C UTT100N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS (T J =25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT V DSS 60 V V GSS ±20 V Continuous ID 100 A Drain Current Pulsed I DM 400 A Avalanche Energy Single Pulsed E AS 450 mJ Peak Diode Recovery dv/dt dv/dt 6 V/ns Power Dissipation PD 100 W Junction Temperature TJ +150 °C Storage Temperature T STG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL θ JA θ JC RATINGS 62.5 1.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (T J =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =250µA, V GS =0V Drain-Source Leakage Current I DSS V DS =60V, V GS =0V Forward V GS =+20V, V DS =0V Gate- Source Leakage Current I GSS Reverse V GS =-20V, V DS =0V ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS , I D =250µA Static Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =50A DYNAMIC PARAMETERS Input Capacitance C ISS Output Capacitance C OSS V GS =0V, V DS =25V, f=1.0MHz Reverse Transfer Capacitance C RSS SWITCHING PARAMETERS Total Gate Charge QG Gate to Source Charge Q GS V GS =10V, V DS =30V, I D =100A Gate to Drain Charge Q GD Turn-ON Delay Time t D(ON) Rise Time tR V DD =30V, VGS=10V, I D ≒100A, R G =0.4Ω Turn-OFF Delay Time t D(OFF) Fall-Time tF Transconductance g FS V DS =15V, I D =30A SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current I SM Drain-Source Diode Forward Voltage V SD I S =100A, V GS =0V Resistance of Gate RG UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 V 10 µA +100 nA -100 nA 1 3 7 V mΩ 12900 1060 700 pF pF pF 500 50 33 90 130 768 280 nC nC nC ns ns ns ns S 200 420 30 100 400 0.65 1.0 1.3 1.5 2 A A V Ω 2 of 3 QW-R502-509.C UTT100N06 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 250 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 Drain Current vs. Gate Threshold Voltage 300 200 150 100 150 100 50 50 0 0 0 0 14 42 56 70 28 Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics 60 120 50 100 VGS=10V, ID=50A 40 30 20 0.5 1.5 1 2.5 2 Gate Threshold Voltage, VTH (V) 3 Drain Current vs. Source to Drain Voltage Drain Current, ID (A) Drain Current, ID (A) 200 80 60 40 20 10 0 0 0.05 0.1 0.15 0.2 0.25 0.3 Drain to Source Voltage, VDS (V) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-509.C