DISCRETE SEMICONDUCTORS DATA SHEET BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors July 1994 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures excellent reliability. BFG520W/XR N5 CODE handbook, 2 columns 4 PINNING 1 APPLICATIONS They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems. DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. 3 PIN 2 DESCRIPTION Top view BFG520W (see Fig.1) 1 collector 2 base 3 emitter 4 emitter MSB014 Fig.1 SOT343. handbook, 2 columns 3 BFG520W/X (see Fig.1) 1 collector 2 emitter 3 base 4 emitter 2 BFG520W/XR (see Fig.2) 1 collector 2 emitter 3 base 4 emitter 4 1 Top view MSB035 Fig.2 SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS open emitter MIN. TYP. MAX. UNIT − − 20 V − − 15 V VCBO collector-base voltage VCEO collector-emitter voltage open base IC collector current (DC) − − 70 mA Ptot total power dissipation up to Ts = 60 °C − − 500 mW hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250 Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.35 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 17 − dB |s21|2 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 16 17 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz 1.1 1.6 dB July 1994 2 − Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 70 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C up to Ts = 60 °C; see Fig.3; note 1 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to soldering point Rth j-s up to Ts = 60 °C; note 1 Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. MLB779 600 handbook, halfpage P tot (mW) 400 200 0 0 50 100 150 T s (o C) 200 Fig.3 Power derating curve. July 1994 3 VALUE UNIT 180 K/W Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.01 mA; IE = 0 − − 20 V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA; IB = 0 − − 15 V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.01 mA; IC = 0 − − 2.5 V ICBO collector cut-off current open emitter; VCB = 6 V; IE = 0 − − 50 nA hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250 Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.35 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain; note 1 IC = 20 mA; VCE = 6 V; f = 900 MHz; − Tamb = 25 °C 17 − dB − 11 − dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C |s21|2 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; 16 Tamb = 25 °C 17 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz − 1.1 1.6 dB Γs = Γopt; IC = 20 mA; VCE = 6 V; f = 900 MHz − 1.6 2.1 dB Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 2 GHz − 1.85 − dB 17 − dBm PL1 output power at 1 dB gain compression IC = 20 mA; VCE = 6 V; f = 900 MHz; − RL = 50 Ω; Tamb = 25 °C ITO third order intercept point note 2 − 26 − dBm Vo output voltage note 3 − 275 − mV d2 second order intermodulation distortion note 4 − −50 − dB Notes s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) 2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz. 3. dim = −60 dB (DIN45004B); IC = 20 mA; VCE = 6 V; Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; RL = 75 Ω; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz. 4. IC = 20 mA; VCE = 6 V; Vo = 75 mV; RL = 75 Ω; Tamb = 25 °C; fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz. July 1994 4 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor MLB807 150 MLB808 0.6 handbook, halfpage handbook, halfpage C re (pF) h FE 100 0.4 50 0.2 0 10 1 1 10 I C (mA) 0 102 0 Fig.5 MLB809 12 handbook, halfpage fT (GHz) V CE = 6V 8 3V 4 0 1 10 I C (mA) 10 2 f = 1 GHz; Tamb = 25 °C. July 1994 7.5 10 IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.6 5 VCB (V) VCE = 6 V. Fig.4 2.5 Transition frequency as a function of collector current; typical values. 5 Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor MLB810 30 handbook, halfpage gain gain (dB) (dB) 20 MLB811 30 handbook, halfpage 20 G max MSG G UM G max MSG 10 G UM 10 0 0 10 30 20 0 40 0 10 30 20 I C (mA) f = 900 MHz; VCE = 6 V. Fig.7 f = 2 GHz; VCE = 6 V. Gain as a function of collector current; typical values. Fig.8 MLB812 50 Gain as a function of collector current; typical values. MLB813 50 handbook, halfpage gain (dB) 40 I C (mA) handbook, halfpage gain (dB) G UM 40 G UM 40 MSG MSG 30 30 20 20 G max G max 10 10 0 0 102 10 103 f (MHz) 104 10 IC = 5 mA; VCE = 6 V. Fig.9 July 1994 102 103 f (MHz) 104 IC = 20 mA; VCE = 6 V. Gain as a function of frequency; typical values. Fig.10 Gain as a function of frequency; typical values. 6 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor MLB818 30 MLB819 30 handbook, halfpage handbook, halfpage d2 (dB) d im (dB) 40 40 50 50 60 60 70 70 0 10 20 30 I C (mA) 40 0 Vo = 275 mV; f(p + q − r) = 793.25 MHz; VCE = 6 V; RL = 75 Ω; Tamb = 25 °C. 20 30 I C (mA) 40 Vo = 75 mV; f(p + q) = 810 MHz; VCE = 6 V; RL = 75 Ω; Tamb = 25 °C. Fig.11 Intermodulation distortion as a function of collector current; typical values. Fig.12 Second order intermodulation distortion as a function of collector current; typical values. MLB820 4 10 MLB821 20 handbook, halfpage handbook, halfpage G ass (dB) F (dB) f = 900 MHz 1000 MHz 15 3 f = 2000 MHz 2000 MHz 2 10 1000 MHz 900 MHz 500 MHz 1 5 0 1 10 I C (mA) 0 10 2 1 VCE = 6 V. I C (mA) 10 2 VCE = 6 V. Fig.13 Minimum noise figure as a function of collector current; typical values. July 1994 10 Fig.14 Associated available gain as a function of collector current; typical values. 7 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor MLB822 MLB823 20 4 handbook, halfpage handbook, halfpage I C = 5 mA G ass (dB) F (dB) 20 mA 15 3 10 2 IC = 20 mA 1 0 10 2 5 5 mA 10 3 f (MHz) 0 10 2 10 4 VCE = 6 V. f (MHz) 10 4 VCE = 6 V. Fig.15 Minimum noise figure as a function of frequency; typical values. July 1994 10 3 Fig.16 Associated available gain as a function of frequency; typical values. 8 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor 90 o unstable region handbook, full pagewidth 135 o 1.0 1 45 o 2 0.5 0.8 0.6 Γ opt 0.2 0.4 5 F min = 1.1 dB 180 o 0.2 0 1 0.5 0.2 2 5 0o F = 1.5 dB stability circle 0 F = 2 dB 5 0.2 F = 3 dB 0.5 2 135 o 45 o 1 MLB824 1.0 90 o f = 900 MHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω. Fig.17 Common emitter noise figure circles; typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 (4) 0.2 0.4 5 (3) 0.2 (2) 180 o 0.2 0 1 0.5 2 5 0o 0 (1) (5) 5 0.2 (1) (2) (3) (4) (5) Γopt; Fmin = 1.85 dB. F = 2 dB. F = 2.5 dB. F = 3 dB. Γms; Gmax = 11.8 dB. (6) (7) 0.5 (8) 2 135 o 45 o 1 (6) G = 11 dB. (7) G = 10 dB. (8) G = 9 dB. MLB825 90 o f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω. Fig.18 Common emitter noise figure circles; typical values. July 1994 9 1.0 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 3 GHz 0.2 180 o 0.2 0 1 0.5 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MLB814 1.0 90 o VCE = 6 V; IC = 20 mA; Zo = 50 Ω. Fig.19 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 0o 10 135 o 45 o 90 o MLB815 VCE = 6 V; IC = 20 mA. Fig.20 Common emitter forward transmission coefficient (s21); typical values. July 1994 10 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor 90 o handbook, full pagewidth 3 GHz 135 o 45 o 40 MHz 180 o 0.25 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MLB816 VCE = 6 V; IC = 20 mA. Fig.21 Common emitter reverse transmission coefficient (s12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 3 GHz 0.2 0.5 5 2 135 o 45 o 1 MLB817 1.0 90 o VCE = 6 V; IC = 20 mA; Zo = 50 Ω. Fig.22 Common emitter output reflection coefficient (s22); typical values. July 1994 11 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor SPICE parameters for the BFG520W crystal SEQUENCE No. PARAMETER VALUE UNIT PARAMETER VALUE 1 IS 1.016 fA 36 (1) VJS 750.0 mV 2 BF 220.1 − 37 (1) MJS 0.000 − 3 NF 1.000 − 38 FC 0.780 − 4 VAF 48.06 V Note 5 IKF 510 mA 6 ISE 283 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 2.035 − 8 BR 100.7 − 9 NR 0.988 − 10 VAR 1.692 V 11 IKR 2.352 mA SEQUENCE No. C cb handbook, halfpage L1 LB B L2 B' C' C 12 ISC 24.48 aA 13 NC 1.022 − 14 RB 10.00 Ω 15 IRB 1.000 µA 16 RBM 10.00 Ω 17 RE 775.3 mΩ RC 2.210 Ω XTB 0.000 − 20 (1) EG 1.110 eV 21 (1) XTI 3.000 − 22 CJE 1.245 pF 23 VJE 600.0 mV 24 MJE 0.258 − 25 TF 8.616 ps 26 XTF 6.788 − 27 VTF 1.414 V 28 ITF 110.3 mA Cbe 70 fF 29 PTF 45.01 deg Ccb 50 fF 30 CJC 447.6 fF Cce 115 fF 31 VJC 189.2 mV L1 0.34 nH 32 MJC 0.070 − L2 0.10 nH 33 XCJC 0.130 − L3 0.25 nH 34 TR 543.7 ps LB 0.40 nH CJS 0.000 F LE 0.40 nH 18 19 35 (1) (1) July 1994 UNIT C be E' Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc) fc = scaling frequency = 1 GHz. Fig.23 Package equivalent circuit SOT343; SOT343R. List of components (see Fig.23) DESIGNATION 12 VALUE UNIT Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor PACKAGE OUTLINES 1.00 max 0.2 M A 0.2 M 0.1 max 0.4 0.2 B 0.2 4 3 A 1.35 1.15 2.2 2.0 1 0.3 0.1 2 0.25 0.10 0.7 0.5 1.4 1.2 2.2 1.8 B MSB374 Dimensions in mm. Fig.24 SOT343. 1.00 max 0.2 M A 0.2 M 0.1 max 0.4 0.2 B 0.2 3 4 A 1.35 1.15 2.2 2.0 2 0.3 0.1 1 0.25 0.10 0.7 0.5 1.4 1.2 2.2 1.8 B Dimensions in mm. Fig.25 SOT343R. July 1994 13 MSB367 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1994 14 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor NOTES July 1994 15 Philips Semiconductors – a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40 783 749, Fax. (31)40 788 399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SÃO PAULO-SP, Brazil. P.O. Box 7383 (01064-970). Tel. (011)821-2333, Fax. (011)829-1849 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17, 77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 123065/1500/01/pp16 Document order number: Date of release: July 1994 9397 738 10011