ETC BFR520/T1

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
July 1994
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
FEATURES
MARKING
• High power gain
TYPE NUMBER
• Low noise figure
BFG520W
N3
• High transition frequency
BFG520W/X
N4
• Gold metallization ensures
excellent reliability.
BFG520W/XR
N5
CODE
handbook, 2 columns
4
PINNING
1
APPLICATIONS
They are intended for applications in
the RF front end, in wideband
applications in the GHz range such as
analog and digital cellular telephones,
cordless telephones (CT2, CT3,
PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners
(SATV) and repeater amplifiers in
fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343 and SOT343R
packages.
3
PIN
2
DESCRIPTION
Top view
BFG520W (see Fig.1)
1
collector
2
base
3
emitter
4
emitter
MSB014
Fig.1 SOT343.
handbook, 2 columns
3
BFG520W/X (see Fig.1)
1
collector
2
emitter
3
base
4
emitter
2
BFG520W/XR (see Fig.2)
1
collector
2
emitter
3
base
4
emitter
4
1
Top view
MSB035
Fig.2 SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
TYP. MAX. UNIT
−
−
20
V
−
−
15
V
VCBO
collector-base voltage
VCEO
collector-emitter voltage open base
IC
collector current (DC)
−
−
70
mA
Ptot
total power dissipation
up to Ts = 60 °C
−
−
500
mW
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.35
−
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C −
17
−
dB
|s21|2
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 16
17
−
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz
1.1
1.6
dB
July 1994
2
−
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
70
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
up to Ts = 60 °C; see Fig.3; note 1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
Rth j-s
up to Ts = 60 °C; note 1
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
MLB779
600
handbook, halfpage
P tot
(mW)
400
200
0
0
50
100
150
T s (o C)
200
Fig.3 Power derating curve.
July 1994
3
VALUE
UNIT
180
K/W
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown
voltage
open emitter; IC = 0.01 mA; IE = 0
−
−
20
V
V(BR)CEO
collector-emitter breakdown
voltage
open base; IC = 10 mA; IB = 0
−
−
15
V
V(BR)EBO
emitter-base breakdown
voltage
open collector; IE = 0.01 mA; IC = 0
−
−
2.5
V
ICBO
collector cut-off current
open emitter; VCB = 6 V; IE = 0
−
−
50
nA
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.35
−
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral power
gain; note 1
IC = 20 mA; VCE = 6 V; f = 900 MHz; −
Tamb = 25 °C
17
−
dB
−
11
−
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
|s21|2
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz; 16
Tamb = 25 °C
17
−
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz
−
1.1
1.6
dB
Γs = Γopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz
−
1.6
2.1
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz
−
1.85
−
dB
17
−
dBm
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V; f = 900 MHz; −
RL = 50 Ω; Tamb = 25 °C
ITO
third order intercept point
note 2
−
26
−
dBm
Vo
output voltage
note 3
−
275
−
mV
d2
second order intermodulation
distortion
note 4
−
−50
−
dB
Notes
s 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz.
3. dim = −60 dB (DIN45004B); IC = 20 mA; VCE = 6 V; Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; RL = 75 Ω;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz.
4. IC = 20 mA; VCE = 6 V; Vo = 75 mV; RL = 75 Ω; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
July 1994
4
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
MLB807
150
MLB808
0.6
handbook, halfpage
handbook, halfpage
C re
(pF)
h FE
100
0.4
50
0.2
0
10 1
1
10
I C (mA)
0
102
0
Fig.5
MLB809
12
handbook, halfpage
fT
(GHz)
V CE =
6V
8
3V
4
0
1
10
I C (mA)
10 2
f = 1 GHz; Tamb = 25 °C.
July 1994
7.5
10
IC = 0; f = 1 MHz.
DC current gain as a function of collector
current; typical values.
Fig.6
5
VCB (V)
VCE = 6 V.
Fig.4
2.5
Transition frequency as a function of
collector current; typical values.
5
Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
MLB810
30
handbook, halfpage
gain
gain
(dB)
(dB)
20
MLB811
30
handbook, halfpage
20
G max
MSG
G UM
G max
MSG
10
G UM
10
0
0
10
30
20
0
40
0
10
30
20
I C (mA)
f = 900 MHz; VCE = 6 V.
Fig.7
f = 2 GHz; VCE = 6 V.
Gain as a function of collector current;
typical values.
Fig.8
MLB812
50
Gain as a function of collector current;
typical values.
MLB813
50
handbook, halfpage
gain
(dB)
40
I C (mA)
handbook, halfpage
gain
(dB)
G UM
40
G UM
40
MSG
MSG
30
30
20
20
G max
G max
10
10
0
0
102
10
103
f (MHz)
104
10
IC = 5 mA; VCE = 6 V.
Fig.9
July 1994
102
103
f (MHz)
104
IC = 20 mA; VCE = 6 V.
Gain as a function of frequency;
typical values.
Fig.10 Gain as a function of frequency;
typical values.
6
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
MLB818
30
MLB819
30
handbook, halfpage
handbook, halfpage
d2
(dB)
d im
(dB)
40
40
50
50
60
60
70
70
0
10
20
30
I C (mA)
40
0
Vo = 275 mV; f(p + q − r) = 793.25 MHz; VCE = 6 V; RL = 75 Ω;
Tamb = 25 °C.
20
30
I C (mA)
40
Vo = 75 mV; f(p + q) = 810 MHz; VCE = 6 V; RL = 75 Ω; Tamb = 25 °C.
Fig.11 Intermodulation distortion as a function
of collector current; typical values.
Fig.12 Second order intermodulation distortion as a
function of collector current; typical values.
MLB820
4
10
MLB821
20
handbook, halfpage
handbook, halfpage
G ass
(dB)
F
(dB)
f = 900 MHz
1000 MHz
15
3
f = 2000 MHz
2000 MHz
2
10
1000 MHz
900 MHz
500 MHz
1
5
0
1
10
I C (mA)
0
10 2
1
VCE = 6 V.
I C (mA)
10 2
VCE = 6 V.
Fig.13 Minimum noise figure as a function
of collector current; typical values.
July 1994
10
Fig.14 Associated available gain as a function
of collector current; typical values.
7
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
MLB822
MLB823
20
4
handbook, halfpage
handbook, halfpage
I C = 5 mA
G ass
(dB)
F
(dB)
20 mA
15
3
10
2
IC =
20 mA
1
0
10 2
5
5 mA
10 3
f (MHz)
0
10 2
10 4
VCE = 6 V.
f (MHz)
10 4
VCE = 6 V.
Fig.15 Minimum noise figure as a function of
frequency; typical values.
July 1994
10 3
Fig.16 Associated available gain as a function
of frequency; typical values.
8
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
90 o
unstable
region
handbook, full pagewidth
135 o
1.0
1
45 o
2
0.5
0.8
0.6
Γ opt
0.2
0.4
5
F min = 1.1 dB
180 o
0.2
0
1
0.5
0.2
2
5
0o
F = 1.5 dB
stability
circle
0
F = 2 dB
5
0.2
F = 3 dB
0.5
2
135 o
45 o
1
MLB824
1.0
90 o
f = 900 MHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.17 Common emitter noise figure circles; typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
(4)
0.2
0.4
5
(3)
0.2
(2)
180 o
0.2
0
1
0.5
2
5
0o
0
(1)
(5)
5
0.2
(1)
(2)
(3)
(4)
(5)
Γopt; Fmin = 1.85 dB.
F = 2 dB.
F = 2.5 dB.
F = 3 dB.
Γms; Gmax = 11.8 dB.
(6)
(7)
0.5
(8)
2
135 o
45 o
1
(6) G = 11 dB.
(7) G = 10 dB.
(8) G = 9 dB.
MLB825
90 o
f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.18 Common emitter noise figure circles; typical values.
July 1994
9
1.0
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
3 GHz
0.2
180 o
0.2
0
1
0.5
2
5
0o
0
40 MHz
5
0.2
0.5
2
135 o
45 o
1
MLB814
1.0
90 o
VCE = 6 V; IC = 20 mA; Zo = 50 Ω.
Fig.19 Common emitter input reflection coefficient (s11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz
180 o
3 GHz
50
40
30
20
0o
10
135 o
45 o
90 o
MLB815
VCE = 6 V; IC = 20 mA.
Fig.20 Common emitter forward transmission coefficient (s21); typical values.
July 1994
10
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
90 o
handbook, full pagewidth
3 GHz
135 o
45 o
40 MHz
180 o
0.25
0.20
0.15
0.10
0o
0.05
135 o
45 o
90 o
MLB816
VCE = 6 V; IC = 20 mA.
Fig.21 Common emitter reverse transmission coefficient (s12); typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
3 GHz
0.2
0.5
5
2
135 o
45 o
1
MLB817
1.0
90 o
VCE = 6 V; IC = 20 mA; Zo = 50 Ω.
Fig.22 Common emitter output reflection coefficient (s22); typical values.
July 1994
11
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
SPICE parameters for the BFG520W crystal
SEQUENCE No.
PARAMETER
VALUE
UNIT
PARAMETER
VALUE
1
IS
1.016
fA
36
(1)
VJS
750.0
mV
2
BF
220.1
−
37 (1)
MJS
0.000
−
3
NF
1.000
−
38
FC
0.780
−
4
VAF
48.06
V
Note
5
IKF
510
mA
6
ISE
283
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
2.035
−
8
BR
100.7
−
9
NR
0.988
−
10
VAR
1.692
V
11
IKR
2.352
mA
SEQUENCE No.
C cb
handbook, halfpage
L1
LB
B
L2
B'
C'
C
12
ISC
24.48
aA
13
NC
1.022
−
14
RB
10.00
Ω
15
IRB
1.000
µA
16
RBM
10.00
Ω
17
RE
775.3
mΩ
RC
2.210
Ω
XTB
0.000
−
20 (1)
EG
1.110
eV
21 (1)
XTI
3.000
−
22
CJE
1.245
pF
23
VJE
600.0
mV
24
MJE
0.258
−
25
TF
8.616
ps
26
XTF
6.788
−
27
VTF
1.414
V
28
ITF
110.3
mA
Cbe
70
fF
29
PTF
45.01
deg
Ccb
50
fF
30
CJC
447.6
fF
Cce
115
fF
31
VJC
189.2
mV
L1
0.34
nH
32
MJC
0.070
−
L2
0.10
nH
33
XCJC
0.130
−
L3
0.25
nH
34
TR
543.7
ps
LB
0.40
nH
CJS
0.000
F
LE
0.40
nH
18
19
35
(1)
(1)
July 1994
UNIT
C be
E'
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
Fig.23 Package equivalent circuit SOT343;
SOT343R.
List of components (see Fig.23)
DESIGNATION
12
VALUE
UNIT
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
PACKAGE OUTLINES
1.00
max
0.2
M
A
0.2
M
0.1
max
0.4
0.2
B
0.2
4
3
A
1.35
1.15
2.2
2.0
1
0.3
0.1
2
0.25
0.10
0.7
0.5
1.4
1.2
2.2
1.8
B
MSB374
Dimensions in mm.
Fig.24 SOT343.
1.00
max
0.2
M
A
0.2
M
0.1
max
0.4
0.2
B
0.2
3
4
A
1.35
1.15
2.2
2.0
2
0.3
0.1
1
0.25
0.10
0.7
0.5
1.4
1.2
2.2
1.8
B
Dimensions in mm.
Fig.25 SOT343R.
July 1994
13
MSB367
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
July 1994
14
Philips Semiconductors
Product specification
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
NOTES
July 1994
15
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Tel. (09)849-4160, Fax. (09)849-7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. (022)74 8000, Fax. (022)74 8341
Philips Semiconductors
Pakistan: Philips Electrical Industries of Pakistan Ltd.,
Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,
KARACHI 75600, Tel. (021)587 4641-49,
Fax. (021)577035/5874546.
Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474
Portugal: PHILIPS PORTUGUESA, S.A.,
Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores,
Apartado 300, 2795 LINDA-A-VELHA,
Tel. (01)14163160/4163333, Fax. (01)14163174/4163366.
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Spain: Balmes 22, 08007 BARCELONA,
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Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,
TAIPEI 100, Tel. (02)388 7666, Fax. (02)382 4382.
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong,
Bangkok 10260, THAILAND,
Tel. (662)398-0141, Fax. (662)398-3319.
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. (0 212)279 2770, Fax. (0212)269 3094
United Kingdom: Philips Semiconductors LTD.,
276 Bath road, Hayes, MIDDLESEX UB3 5BX,
Tel. (081)73050000, Fax. (081)7548421
United States: 811 East Arques Avenue, SUNNYVALE,
CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556
Uruguay: Coronel Mora 433, MONTEVIDEO,
Tel. (02)70-4044, Fax. (02)92 0601
For all other countries apply to: Philips Semiconductors,
International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD, EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. +31-40-724825
SCD33
© Philips Electronics N.V. 1994
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Date of release: July 1994
9397 738 10011