Si3871DV New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOTr Plus Integrated Low Vf Schottky D Optimized for Fast Switching Portable Devices D Shoot Thru Resistant ID (A) 0.105 @ VGS = −4.5 V −2.7 0.175 @ VGS = −2.5 V −1.38 SCHOTTKY PRODUCT SUMMARY APPLICATIONS VKA (V) Vf (v) Diode Forward Voltage IF (A) 20 0.40 V @ 1.0 A 1.0 D Low Voltage Synchronous Buck D Low Voltage Inverter S A D K TSOP-5 Top View D/K 1 S 2 G 3 5 A G 3 mm 4 D/K 2.85 mm P-Channel MOSFET Ordering Information: Si3871DV-T1—E3 (Lead Free) Marking Code: IBxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage (MOSFET and Schottky) VDS −20 Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS Continuous Drain Current (TJ = 150_C) (MOSFET)a TA = 25_C TA = 70_C Pulsed Drain Current (MOSFET) IS Average Foward Current (Schottky) Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range −12 −2.7 −2.3 −2.1 −1.8 −7 −1.13 IF Pulsed Foward Current (Schottky) V −12 IDM Continuous Source Current (MOSFET Diode Conduction)a Maximum Power Dissipation (MOSFET)a ID −0.83 7 TA = 25_C 1.25 0.92 TA = 70_C 0.80 0.59 1.25 0.92 TA = 25_C TA = 70_C 0.80 TJ, Tstg A 1.0 IFM PD Unit W 0.59 −55 to 150 _C Notes a. Surface Mounted on 1” x1” FR4 Board. Document Number: 72954 S-41077—Rev. A, 31-May-04 www.vishay.com 1 Si3871DV New Product Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Device t v 5 sec JJunction-to-Ambient ti t A bi ta Symbol Typical Maximum MOSFET 80 100 Schottky 80 100 110 135 110 135 70 85 70 85 MOSFET St d State Steady St t Junction to Foot Junction-to-Foot Steady State RthJA Schottky MOSFET Schottky RthJF Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.6 Typ Max Unit −1.5 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) VDS = 0 V, VGS = "12 V VDS = −20 V, VGS = 0 V −1 VDS = −20 V, VGS = 0 V, TJ = 75_C −10 VDS w −5 V, VGS = −4.5 V −5 mA A VGS = −4.5 V, ID = −2.7 A 0.085 0.105 VGS = −2.5 V, ID = −1.8 A 0.145 0.175 gfs VDS = −5 V, ID = −2.7 A 6 VSD IS = −1.13 A, VGS = 0 V −0.78 −1.10 3.5 5.3 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.9 Rg 9.4 td(on) 35 55 55 85 40 60 29 36 15 30 Typ Max Gate Resistance Turn-On Delay Time Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 0.9 VDS = −10 V,, VGS = −4.5 V,, ID = −2.7 A VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W IF = −1.13 A, di/dt = 100 A/ms nC W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage g Current Irm Junction Capacitance www.vishay.com 2 CT Test Condition Min IF = 1.0 A 0.35 0.40 IF = 1.0 A, TJ = 125_C 0.28 0.32 0.500 Vr = 20 V 0.05 Vr = 20 V, TJ = 85_C 2 20 Vr = 20 V, TJ = 125_C 10 100 Vr = 10 V 90 Unit V mA pF Document Number: 72954 S-41077—Rev. A, 31-May-04 Si3871DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics Transfer Characteristics 8 8 7 VGS = 5 thru 3 V 6 I D − Drain Current (A) I D − Drain Current (A) 7 2.5 V 5 4 3 2V 2 6 5 4 3 TC = 125_C 2 25_C 1.5 V 1 1 −55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.0 5.0 1.5 2.0 2.5 On-Resistance vs. Drain Current Capacitance 500 0.4 400 0.3 VGS = 2.5 V VGS = 4.5 V 0.1 3.0 Ciss 300 200 Coss 100 0.0 Crss 0 0 1 2 3 4 5 6 7 8 0 4 ID − Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature VDS = 10 V ID = 2.7 A VGS = 4.5 V ID = 2.7 A 1.4 4 3 2 1.2 1.0 0.8 1 0 0.0 12 1.6 rDS(on) − On-Resiistance (Normalized) 5 8 VDS − Drain-to-Source Voltage (V) 6 V GS − Gate-to-Source Voltage (V) 1.0 VGS − Gate-to-Source Voltage (V) 0.5 0.2 0.5 VDS − Drain-to-Source Voltage (V) C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Qg − Total Gate Charge (nC) Document Number: 72954 S-41077—Rev. A, 31-May-04 4.0 4.5 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si3871DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 TJ = 150_C 1 TJ = 25_C 0.1 0.0 ID = 2.7 A 0.4 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 10 0.3 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 VSD − Source-to-Drain Voltage (V) 3 4 5 6 7 8 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 50 0.3 40 ID = 250 mA 0.2 30 Power (W) V GS(th) Variance (V) 2 0.1 20 0.0 10 −0.1 −0.2 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 TJ − Temperature (_C) 10−1 1 10 Time (sec) Safe Operating Area 100 IDM Limited I D − Drain Current (A) 10 rDS(on) Limited 1 ms 1 ID(on) Limited 0.1 10 ms 100 ms 1s 10 s dc TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72954 S-41077—Rev. A, 31-May-04 Si3871DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance MOSFET Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Reverse Current vs. Junction Temperature Forward Voltage Drop 100 10 I F − Forward Current (A) I R − Reverse Current (mA) 10 1 0.1 20 V 10 V 0.01 1 TJ = 150_C TJ = 25_C 0.001 0.0001 −50 −25 0 25 50 75 100 TJ − Junction Temperature (_C) Document Number: 72954 S-41077—Rev. A, 31-May-04 125 150 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VF − Forward Voltage Drop (V) www.vishay.com 5 Si3871DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 600 CT − Junction Capacitance (pF) SCHOTTKY 500 400 300 200 100 0 0 4 8 12 16 20 VKA − Reverse Voltage (V Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 95_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 t1 t2 10−3 10−2 10−1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 6 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72954 S-41077—Rev. 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