Si1406DH Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFETS D 1.8-V Rated D Thermally Enhanced SC-70 Package 20 0.075 @ VGS = 2.5 V 3.6 APPLICATIONS 0.096 @ VGS = 1.8 V 3.2 D Load Switching D PA Switch D Level Switch Pb-free Available SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D Marking Code AB G 3 4 XX YY D Lot Traceability and Date Code S Part # Code Top View Ordering Information: Si1406DH-T1 Si1406DH-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V 3.1 3.9 2.8 2.2 IDM Continuous Diode Current (Diode Conduction)a 10 1.4 A 0.9 1.56 1.0 0.81 0.52 TJ, Tstg Unit −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 60 80 100 125 34 45 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 70684 S-50366—Rev. B, 28-Feb-05 www.vishay.com 1 Si1406DH Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS = VGS, ID = 250 mA 0.45 Typ Max Unit 1.2 V "100 nA Static Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current On-State Drain VDS = 0 V, VGS = "8 V IDSS Currenta ID(on) Drain-Source Drain Source On On-State State Resistancea Diode Forward Voltagea 1 VDS = 20 V, VGS = 0 V, TJ = 85_C 5 VDS = 5 V, VGS = 4.5 V rDS(on) Forward Transconductancea VDS = 20 V, VGS = 0 V 8 mA A VGS = 4.5 V, ID = 3.9 A 0.053 0.065 VGS = 2.5 V, ID = 3.6 A 0.062 0.075 VGS = 1.8 V, ID = 2 A 0.079 0.096 gfs VDS = 10 V, ID = 3.9 A 11 VSD IS = 1.4 A, VGS = 0 V 0.75 1.1 4.9 7.5 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.95 Turn-On Delay Time td(on) 27 41 tr 47 71 54 81 29 44 35 60 Rise Time Turn-Off Delay Time VDS = 10 V,, VGS = 4.5 V,, ID = 3.9 A VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery trr 1.0 IF = 1.4 A. di/dt = 100/ms nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 10 10 VGS = 5 thru 2 V 8 I D − Drain Current (A) I D − Drain Current (A) 8 6 1.5 V 4 2 6 4 TC = 125_C 2 25_C 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 −55_C 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) Document Number: 70684 S-50366—Rev. B, 28-Feb-05 Si1406DH Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 800 0.16 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.20 0.12 VGS = 1.8 V VGS = 2.5 V 0.08 600 Ciss 400 200 0.04 Coss VGS = 4.5 V 0.00 Crss 0 0 2 4 6 8 0 10 4 ID − Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.8 VDS = 10 V ID = 3.9 A 4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 VDS − Drain-to-Source Voltage (V) 5 3 2 1 VGS = 4.5 V ID = 3.9 A 1.6 1.4 1.2 1.0 0.8 0 0 1 2 3 4 5 0.6 −50 6 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on) − On-Resistance ( W ) TJ = 150_C 1 TJ = 25_C 0.1 0.0 25 TJ − Junction Temperature (_C) 10 I S − Source Current (A) 8 0.16 ID = 2 A ID = 3.9 A 0.12 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 70684 S-50366—Rev. B, 28-Feb-05 1.2 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si1406DH Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 30 0.1 25 ID = 250 mA 20 −0.0 Power (W) V GS(th) Variance (V) Threshold Voltage 0.2 −0.1 15 −0.2 10 −0.3 5 −0.4 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 1 0.1 TJ − Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA =100_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70684. www.vishay.com 4 Document Number: 70684 S-50366—Rev. B, 28-Feb-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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