Si5856DC Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D D D D TrenchFETr Power MOSFETS Ultra Low rDS(on) Ultra Low VF Schottky Si5853DC Pin Compatible Pb-free Available APPLICATIONS D Buck Rectifier Switch, Buck-Boost D Synchronous Rectifier or Load D Switch For Portable Devices SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) 20 0.375 V @ 1.0 1.0 1206-8 ChipFETr K D 1 A K A K S D G Marking Code G JD D XXX Lot Traceability and Date Code S Part # Code N-Channel MOSFET Bottom View A Ordering Information: Si5856DC-T1 Si5856DC-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage (MOSFET and Schottky) VDS 20 Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS "8 Continuous Drain Current (TJ = 150_C) (MOSFET)a TA = 25_C TA = 85_C Pulsed Drain Current (MOSFET) IS Average Foward Current (Schottky) Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c 4.2 3.1 20 1.8 IF Pulsed Foward Current (Schottky) V 4.4 5.9 IDM Continuous Source Current (MOSFET Diode Conduction)a Maximum Power Dissipation (MOSFET)a ID 0.9 7 TA = 25_C 2.1 1.1 TA = 85_C 1.1 0.6 1.9 1.1 PD TA = 85_C 1.0 TJ, Tstg A 1.0 IFM TA = 25_C Unit W 0.56 −55 to 150 260 _C Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72234 S-50366—Rev. C, 28-Feb-05 www.vishay.com 1 Si5856DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Device t v 5 sec JJunction-to-Ambient ti t A bi ta Symbol Typical Maximum MOSFET 50 60 Schottky 54 65 90 110 95 115 30 40 30 40 MOSFET St d State Steady St t Junction to Foot Junction-to-Foot Steady State RthJA Schottky MOSFET Schottky RthJF Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min 0.4 Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85_C 5 Currenta On-State Drain Drain-Source Drain Source On On-State State Resistancea ID(on) rDS(on) Forward Transconductancea Diode Forward Voltagea VDS w 5 V, VGS = 4.5 V 20 mA A VGS = 4.5 V, ID = 4.4 A 0.032 0.040 VGS = 2.5 V, ID = 4.1 A 0.036 0.045 VGS = 1.8 V, ID = 1.9 A 0.042 0.052 gfs VDS = 10 V, ID = 4.4 A 22 VSD IS = 1.0 A, VGS = 0 V 0.8 1.2 5 7.5 VDS = 10 V,, VGS = 4.5 V,, ID = 4.4 A 0.85 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1 Turn-On Delay Time td(on) 20 30 tr 36 55 30 45 12 20 45 90 Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W IF = 0.9 A, di/dt = 100 A/ms nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%, b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance www.vishay.com 2 CT Test Condition Min Typ Max IF = 1.0 0.34 0.375 IF = 1.0, TJ = 125_C 0.255 0.290 0.500 Vr = 20 V 0.05 Vr = 20 V, TJ = 85_C 2 20 Vr = 20 V, TJ = 125_C 10 100 Vr = 10 V 90 Unit V mA pF Document Number: 72234 S-50366—Rev. C, 28-Feb-05 Si5856DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 2 V TC = −55_C 16 12 I D − Drain Current (A) I D − Drain Current (A) 16 1.5 V 8 4 25_C 12 125_C 8 4 1V 0 0 1 2 3 4 0 0.0 5 0.4 VDS − Drain-to-Source Voltage (V) 0.8 1.6 2.0 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 800 0.10 700 0.08 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 1.2 0.06 VGS = 1.8 V VGS = 2.5 V 0.04 600 Ciss 500 400 300 200 0.02 Coss VGS = 4.5 V 100 0.00 Crss 0 0 4 8 12 16 0 20 4 ID − Drain Current (A) 12 16 20 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 VDS = 10 V ID = 4.4 A VGS = 4.5 V ID = 4.4 A 4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 8 3 2 1 1.4 1.2 1.0 0.8 0 0 1 2 3 4 Qg − Total Gate Charge (nC) Document Number: 72234 S-50366—Rev. C, 28-Feb-05 5 6 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si5856DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET On-Resistance vs. Gate-to-Source Voltage 0.10 10 0.08 r DS(on) − On-Resistance ( W ) I S − Source Current (A) Source-Drain Diode Forward Voltage 20 TJ = 150_C TJ = 25_C 1 0.0 ID = 4.4 A 0.06 ID = 2 A 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD − Source-to-Drain Voltage (V) Threshold Voltage 3 4 5 Single Pulse Power 0.2 50 0.1 40 ID = 250 mA −0.0 Power (W) V GS(th) Variance (V) 2 VGS − Gate-to-Source Voltage (V) −0.1 30 20 −0.2 10 −0.3 −0.4 −50 −25 0 25 50 75 100 125 0 10−4 150 10−3 TJ − Temperature (_C) 10−2 10−1 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited *rDS(on) Limited I D − Drain Current (A) 10 1 0.1 P(t) = 0.0001 P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 72234 S-50366—Rev. C, 28-Feb-05 Si5856DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 MOSFET Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 Normalized Effective Transient Thermal Impedance 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 10−1 1 Square Wave Pulse Duration (sec) Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Reverse Current vs. Junction Temperature Forward Voltage Drop 100 10 I F − Forward Current (A) I R − Reverse Current (mA) 10 1 0.1 20 V 10 V 0.01 1 TJ = 150_C TJ = 25_C 0.001 0.0001 −50 −25 0 25 50 75 100 TJ − Junction Temperature (_C) Document Number: 72234 S-50366—Rev. C, 28-Feb-05 125 150 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VF − Forward Voltage Drop (V) www.vishay.com 5 Si5856DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 600 CT − Junction Capacitance (pF) SCHOTTKY 500 400 300 200 100 0 0 4 8 12 16 20 VKA − Reverse Voltage (V Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 95_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72234. www.vishay.com 6 Document Number: 72234 S-50366—Rev. C, 28-Feb-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1