Si3586DV Vishay Siliconix New Product N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 rDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 3.4 0.070 at VGS = 2.5 V 3.2 0.100 at VGS = 1.8 V 2.5 0.110 at VGS = - 4.5 V - 2.5 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8V - 1.0 • TrenchFET® Power MOSFET • Fast Switching In Small Footprint • Very Low rDS(on) for Increased Efficiency COMPLIANT APPLICATIONS • Load Switch for Portable Devices S2 D1 TSOP-6 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 RoHS G2 3 mm G1 2.85 mm Ordering Information: Si3586DV-T1-E3 (Lead (Pb)-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD P-Channel Steady State 5 sec Steady State 20 - 20 3.4 2.9 2.7 2.3 - 2.5 - 2.1 - 2.0 - 1.7 ±8 1.05 0.75 - 1.05 - 0.75 1.15 0.83 1.15 0.83 0.73 0.53 0.73 0.53 TJ, Tstg Unit V ±8 IDM Pulsed Drain Current Maximum Power Dissipationa ID N-Channel 5 sec - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 5 sec Steady State Steady State RthJA RthJF Typical Maximum 93 110 130 150 90 90 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72310 S-60422-Rev. C, 20-Mar-06 www.vishay.com 1 Si3586DV Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS VDS = VGS, ID = 250 µA N-Ch 0.40 1.1 VDS = VGS, ID = - 250 µA P-Ch - 0.40 - 1.1 VDS = 0 V, VGS = ± 8 V N-Ch ± 100 VDS = 0 V, VGS = ± 8 V P-Ch ± 100 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 85 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 85 °C P-Ch - 10 ID(on) rDS(on) VDS ≥ 5 V, VGS = 4.5 V N-Ch 5 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch -5 VGS = 4.5 V, ID = 3.4 A N-Ch 0.047 VGS = - 4.5 V, ID = - 2.5 A P-Ch 0.086 0.110 VGS = 2.5 V, ID = 3.2 A N-Ch 0.054 0.070 VGS = - 2.5 V, ID = - 2.0 A P-Ch 0.116 0.145 VGS = - 1.8 V, ID = - 2.5 A N-Ch 0.075 0.100 VGS = - 1.8 V, ID = - 1.0 A P-Ch 0.170 0.220 µA 0.060 VDS = 5 V, ID = 3.4 A N-Ch 13 P-Ch 6 IS = 1.05 A, VGS = 0 V N-Ch 0.8 1.1 IS = - 1.05 A, VGS = 0 V P-Ch - 0.8 - 1.1 N-Ch 4.1 6.0 P-Ch 5 7.5 N-Ch 0.65 P-Ch P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A N-Ch P-Ch 0.68 N-Ch 2.6 P-Ch 9.8 N-Ch 30 P-Ch 28 45 N-Ch 52 85 VSD nA A VDS = - 5 V, ID = - 2.5 A gfs V Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time N-Channel VDS = 10 V, VGS = 4.5 V, ID = 3.4 A Rg td(on) tr td(off) tf N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 0.8 1.3 Ω 45 P-Ch 55 85 N-Ch 25 40 P-Ch 55 85 N-Ch 20 30 P-Ch 32 50 IF = 1.05 A, di/dt = 100 A/µs N-Ch 25 40 IF = - 1.05 A, di/dt = 100 A/µs P-Ch 25 40 P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω trr nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72310 S-60422-Rev. C, 20-Mar-06 Si3586DV Vishay Siliconix New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 8 8 VGS = 5 thru 2 V 7 7 6 I D - Drain Current (A) I D - Drain Current (A) 6 5 1.5 V 4 3 2 5 4 3 TC = 125 °C 2 25 °C 1 1 0 0 0.00 - 55 °C 0 1 2 3 4 5 0.25 VDS - Drain-to-Source Voltage (V) 0.50 1.25 1.50 1.75 2.00 Transfer Characteristics 600 0.10 500 0.08 Ciss C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 1.00 VGS - Gate-to-Source Voltage (V) Output Characteristics VGS = 4.5 V 0.06 VGS = 2.5 V 0.04 0.02 400 300 200 Coss 100 0.00 Crss 0 0 1 2 3 4 5 6 7 8 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 6 20 1.6 5 VDS = 10 V ID = 3.4 A 1.4 r DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 0.75 4 3 2 VGS = 4.5 V ID = 3.4 A 1.2 1.0 0.8 1 0 0 1 2 3 4 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72310 S-60422-Rev. C, 20-Mar-06 5 6 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si3586DV Vishay Siliconix New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 0.25 10 r DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.20 TJ = 150 °C 1 TJ = 25 °C 0.1 ID = 3.4 A 0.15 0.10 0.05 0.00 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.2 8 ID = 250 µA 0.1 0.0 Power (W) V GS(th) Variance (V) 6 - 0.1 4 - 0.2 2 - 0.3 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.1 0.01 TJ - Temperature (°C) 1 10 30 Time (sec) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 10 I D - Drain Current (A) Limited by rDS(on) 1 ms 1 10 ms 100 ms 0.1 1s TC = 25 °C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 72310 S-60422-Rev. C, 20-Mar-06 Si3586DV Vishay Siliconix New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72310 S-60422-Rev. C, 20-Mar-06 www.vishay.com 5 Si3586DV Vishay Siliconix New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 8 8 7 TC = - 55 °C 7 VGS = 5 thru 2.5 V 25 °C 6 6 I D - Drain Current (A) I D - Drain Current (A) 2V 5 4 3 2 1.5 V 5 125 °C 4 3 2 1 1 0 0.0 0 0 1 2 3 4 5 0.5 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.75 650 0.60 520 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 1.0 0.45 0.30 VGS = 1.8 V VGS = 2.5 V Ciss 390 260 Coss 130 0.15 Crss VGS = 4.5 V 0 0.00 0 1 2 3 4 5 6 7 0 8 4 8 ID - Drain Current (A) On-Resistance vs. Drain Current 16 20 Capacitance 1.6 6.5 VGS = 4.5 V ID = 2.5 A VDS = 10 V ID = 2.5 A 1.4 5.2 r DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 12 VDS - Drain-to-Source Voltage (V) 3.9 2.6 1.2 1.0 0.8 1.3 0.0 0 1 2 3 4 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 6 5 6 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 72310 S-60422-Rev. C, 20-Mar-06 Si3586DV Vishay Siliconix New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 0.5 10 r DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.4 TJ = 150 °C 1 TJ = 25 °C 0.3 ID = 2.5 A 0.2 0.1 0.0 0.1 0.00 0.3 0.6 0.9 1.2 0 1.5 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 8 0.3 Power (W) V GS(th) Variance (V) 6 0.2 ID = 250 µA 0.1 4 0.0 2 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 150 0.1 0.01 TJ - Temperature (°C) 1 10 30 Time (sec) Single Pulse Power (Junction-to-Ambient) Threshold Voltage 10 ID Drain Current (A) Limited by rDS(on) 1 ms 1 10 ms 100 ms 0.1 1s TC = 25 °C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 72310 S-60422-Rev. C, 20-Mar-06 www.vishay.com 7 Si3586DV Vishay Siliconix New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 130 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72310. www.vishay.com 8 Document Number: 72310 S-60422-Rev. C, 20-Mar-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1