UNISONIC TECHNOLOGIES CO., LTD 4N80-N Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80-N is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 4N80-N is universally applied in high efficiency switch mode power supply. FEATURES * RDS(on)<3.0Ω @VGS =10V * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N80L-TM3-T 4N80G-TM3-T 4N80L-TN3-R 4N80G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A96.A 4N80-N Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Continuous ID 4.0 A Drain Current Pulsed (Note 2) IDM 16 A Avalanche Energy Single Pulsed (Note 3) EAS 250 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=31.25mH, IAS=4A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 110 2.5 UNIT °C/W °C/W 2 of 6 QW-R502-A96.A 4N80-N Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 800 Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C VDS=800V, VGS=0V Drain-Source Leakage Current IDSS VDS=640V, TC=125°C Forward VDS=0V ,VGS=30V Gate-Source Leakage Current IGSS Reverse VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V,VGS=0V,f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=640V, VGS=10V, Gate-Source Charge QGS ID=4A (Note 1,2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=400V, ID=4A, RG=25Ω (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =4A, VGS=0V Body Diode Reverse Recovery Time trr VGS=0V, IS=4A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP 950 MAX UNIT V mV/°C 10 µA 100 µA 100 nA -100 nA 2.58 5.0 3.0 V Ω 570 65 9.5 880 100 12 pF pF pF 24 7.3 7.25 50 110 95 70 35 nC nC nC ns ns ns ns 60 130 110 90 4 16 1.4 575 3.65 A A V ns μC 3 of 6 QW-R502-A96.A 4N80-N Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-A96.A 4N80-N Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-A96.A 4N80-N Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) 200 150 100 50 200 150 100 50 0 0 0 1 2 3 4 Gate Threshold Voltage, VTH (V) 5 Drain Current, ID (A) 0 200 400 600 800 1000 1200 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-A96.A