UNISONIC TECHNOLOGIES CO., LTD 8NM65-SH Preliminary Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8NM65-SH is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * RDS(ON) < 0.78Ω @ VGS = 10V, ID = 4.0A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Order Number Lead Free Halogen Free 8NM65L-TA3-T 8NM65G-TA3-T 8NM65L-TF1-T 8NM65G-TF1-T 8NM65L-TF2-T 8NM65G-TF2-T 8NM65L-TF3-T 8NM65G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Package TO-220 TO-220F1 TO-220F2 TO-220F Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube 1 of 7 QW-R205-089.a 8NM65-SH Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-089.a 8NM65-SH Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 8.0 A Continuous ID 8.0 A Drain Current 32 A Pulsed (Note 2) IDM Avalanche Energy Single Pulsed (Note 3) EAS 270 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 130 W Power Dissipation TO-220F/TO-220F1 48 W TO-220F2 PD TO-220 1.04 W/°C Derate above 25°C TO-220F/TO-220F1 0.384 W/°C TO-220F2 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=150mH, IAS=1.6A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤8A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient TO-220 Junction to Case TO-220F/TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 0.9 UNIT °С/W °С/W 2.54 °С/W 3 of 7 QW-R205-089.a 8NM65-SH Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS IDSS VGS = 0V, ID = 250μA VDS = 650V, VGS = 0V Forward VGS = 30V, VDS = 0V Gate- Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 4.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A, Gate-Source Charge QGS IG=100μA (Note 1, 2) Gate-Drain Charge QGD SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=30V, VGS=10V, ID=0.5A, Turn-On Rise Time tR RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 8A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, ISD = 8A, di/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR MIN TYP MAX UNIT 650 V 1 μA 100 nA -100 nA 0.67 V/°C 2.5 4.5 0.78 V Ω 332 252 3.5 pF pF pF 78 5.6 14.4 nC nC nC 48 72 168 50 ns ns ns ns 330 3.8 1.4 V 8 A 32 A ns μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R205-089.a 8NM65-SH Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-089.a 8NM65-SH Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VGS RG VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-089.a 8NM65-SH Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-089.a