UNISONIC TECHNOLOGIES CO., LTD UT7422-H Preliminary Power MOSFET 40A, 30V N-CHANNEL MOSFET DESCRIPTION The UTC UT7422-H is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, etc. The UTC UT7422-H is suitable for load switch and battery protection applications. FEATURES * RDS(ON) < 4.3mΩ @ VGS=10V, ID=20A RDS(ON) < 6.0mΩ @ VGS=4.5V, ID=16A * Low RDS(ON) SYMBOL ORDERING INFORMATION Ordering Number Note: UT7422G-K08-3030-R Pin Assignment: G: Gate D: Drain UT7422G-K08-3030-R Package DFN-8(3×3) S: Source 1 S 2 S Pin Assignment 3 4 5 6 7 S G D D D (1)Packing Type (1) R: Tape Reel (2)Package Type (2) K08-3030: DFN-8(3×3) (3)Green Package (3) G: Halogen Free and Lead Free www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 8 D Packing Tape Reel 1 of 7 QW-R502-B36.a UT7422-H Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw QW-R502-B36.a UT7422-H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) TC=25°C ID 40 A Pulsed Drain Current (Note 4) IDM 200 A Continuous Drain Current TA=25°C IDSM 20 A Avalanche Current (Note 4) IAS, IAR 45 A Avalanche Energy L=0.1mH (Note 4) EAS, EAR 101 mJ Power Dissipation (Note 3) TC=25°C PD 36 W Power Dissipation (Note 2) TA=25°C PDSM 3.1 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on θJA t≤10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. 3. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 4. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C. 5. The θJA is the sum of the thermal impedence from junction to case θJC and case to ambient. 6. The maximum current rating is package limited. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (Note 2, 5) Junction-to-Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD RATINGS 75 3.4 UNIT °C/W °C/W 3 of 7 www.unisonic.com.tw QW-R502-B36.a UT7422-H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage SYMBOL BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current IGSS Static Drain-Source On-State Resistance VGS(TH) ID(ON) RDS(ON) TEST CONDITIONS MIN ID=250µA, VGS=0V VDS=30V, VGS=0V VDS=30V, VGS=0V, TJ=55°C VGS=±20V, VDS=0V 30 VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A VGS=10V, ID=20A, TJ=125°C VGS=4.5V, ID=16A VDS=5V, ID=20A 1.3 200 TYP MAX UNIT 1 5 100 1.85 2.4 3.5 5.5 4.5 85 4.3 6.8 6 Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS 1950 2445 2940 Output Capacitance COSS VGS=0V, VDS=15V, f=1.0MHz 270 390 510 Reverse Transfer Capacitance CRSS 130 220 310 Gate Resistance RG VDS=0V, VGS=0V, f=1.0MHz 1.2 2.4 3.6 SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=15V, ID=20A 32 41 50 Total Gate Charge QG 15 19 24 Gate to Source Charge QGS VGS=4.5V, VDS=15V, ID=20A 7.2 Gate to Drain Charge QGD 6.6 7 Turn-ON Delay Time tD(ON) Rise Time tR 5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω Turn-OFF Delay Time tD(OFF) 41.5 Fall-Time tF 10.5 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A,VGS=0V 0.7 1 Maximum Body-Diode Continuous IS 40 Current (Note) 17.5 22 Body Diode Reverse Recovery Time trr IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Charge Qrr 31 40 Note: The maximum current rating is package limited. UNISONIC TECHNOLOGIES CO., LTD V µA µA nA V A mΩ mΩ mΩ S pF pF pF Ω nC nC nC nC ns ns ns ns V A ns nC 4 of 7 www.unisonic.com.tw QW-R502-B36.a UT7422-H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG VGS 90% RL VGS VDS 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD tR td(OFF) tF tOFF Resistive Switching Waveforms 5 of 7 www.unisonic.com.tw QW-R502-B36.a UT7422-H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw QW-R502-B36.a UT7422-H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R502-B36.a