Si3420DV Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 3.7 @ VGS = 10 V 0.5 D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D (3) G 3 4 2.85 mm (4) S Ordering Information: Si3420DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 200 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) Avalanche Current L = 0.1 0 1 mH Single Avalanche Energy Continuous Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range ID V 0.5 0.37 0.4 0.29 IDM 1 IAS 1 EAS 0.05 IS 1 PD A mJ A 2.1 1.14 1.34 0.73 TJ, Tstg Unit - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 50 60 90 110 35 42 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71097 S-31725—Rev. B, 18-Aug-03 www.vishay.com 1 Si3420DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 2.0 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Drain-Source On-State Resistancea VDS = 0 V, VGS = "20 V 1 VDS = 160 V, VGS = 0 V, TJ = 55_C 25 ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 0.35 A gfs VDS = 15 V, ID = 1 A VSD IS = 1 A, VGS = 0 V Diode Forward Voltagea "100 VDS = 160 V, VGS = 0 V rDS(on) Forward Transconductancea V nA mA 1 A 3.7 W 9 S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 2.2 VDS = 100 V, VGS = 10 V, ID = 0.5 A 0.95 tr Turn-Off Delay Time 2.5 VDD = 100 V, RL = 100 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 0.5 td(on) Rise Time 3.5 0.65 IF = 1 A, di/dt = 100 A/ms 7 12 8 13 10 15 30 50 140 225 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 2.0 2.0 VGS = 10 thru 8 V TC = - 55_C 25_C 1.5 7V I D - Drain Current (A) I D - Drain Current (A) 1.5 1.0 6V 0.5 0.5 5V 4V 0.0 0.0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 125_C 1.0 10 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 71097 S-31725—Rev. B, 18-Aug-03 Si3420DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 120 6 100 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 7 5 4 VGS = 10 V 3 2 Ciss 80 60 40 Coss 20 1 0 0.0 Crss 0 0.2 0.4 0.6 0.8 0 1.0 20 ID - Drain Current (A) Gate Charge 80 100 On-Resistance vs. Junction Temperature 2.5 VDS = 100 V ID = 0.5 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 60 VDS - Drain-to-Source Voltage (V) 20 16 12 8 4 VGS = 10 V ID = 0.35 A 2.0 1.5 1.0 0.5 0 0 1 2 3 0.0 - 50 4 - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 10 r DS(on) - On-Resistance ( W ) TJ = 150_C 1 0.1 TJ = 25_C 0.01 0.001 0.0 25 TJ - Junction Temperature (_C) 10 I S - Source Current (A) 40 8 ID = 0.35 A 6 4 2 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71097 S-31725—Rev. B, 18-Aug-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si3420DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.9 20 16 ID = 250 mA 0.3 Power (W) V GS(th) Variance (V) 0.6 0.0 12 TA = 25_C 8 - 0.3 4 - 0.6 - 0.9 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71097 S-31725—Rev. B, 18-Aug-03 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1