VISHAY SI9410BDY

Si9410BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
ID (A)
0.024 @ VGS = 10 V
8.1
0.033 @ VGS = 4.5 V
6.9
D TrenchFETr Power MOSFETS
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
S
Top View
N-Channel MOSFET
Ordering Information: Si9410BDY
Si9410BDY-T1 (with Tape and Reel)
Si9410BDY—E3 (Lead (Pb)-Free)
Si9410BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current (10 ms Pulse Width)
IS
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
8.1
6.2
6.5
IDM
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
5.0
30
2.1
1.2
2.5
1.5
1.6
0.9
TJ, Tstg
Unit
−55 to 150
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot
Symbol
t v 10 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
40
50
70
85
20
24
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72269
S-50153—Rev. B, 31-Jan-05
www.vishay.com
1
Si9410BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
Typ
Max
Unit
3.0
V
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55_C
5
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
30
VDS w 5 V, VGS = 10 V
rDS(on)
mA
A
VGS = 10 V, ID = 8.1 A
0.019
0.024
VGS = 4.5 V, ID = 6.9 A
0.026
0.033
gfs
VDS = 15 V, ID = 8.1 A
20
VSD
IS = 2.1 A, VGS = 0 V
0.8
1.2
15
23
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.5
Turn-On Delay Time
td(on)
10
15
15
25
30
45
11
20
25
50
Rise Time
VDS = 15 V, VGS = 10 V, ID = 8.1 A
tr
Turn-Off Delay Time
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
3.2
IF = 2.1 A, di/dt = 100 A/ms
nC
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
VGS = 10 thru 5 V
4V
24
I D − Drain Current (A)
I D − Drain Current (A)
24
18
12
6
0
0.0
3V
0.5
1.0
1.5
2.0
2.5
3.0
VDS − Drain-to-Source Voltage (V)
www.vishay.com
2
18
12
TC = −125_C
6
25_C
3.5
4.0
0
0.0
0.5
1.0
1.5
2.0
−55_C
2.5
3.0
3.5
4.0
4.5
VGS − Gate-to-Source Voltage (V)
Document Number: 72269
S-50153—Rev. B, 31-Jan-05
Si9410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
1200
0.035
1000
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
0.040
0.030
VGS = 4.5 V
0.025
0.020
VGS = 10 V
0.015
Ciss
800
600
400
Coss
0.010
200
0.005
0.000
Crss
0
0
5
10
15
20
25
30
0
5
10
ID − Drain Current (A)
Gate Charge
25
30
On-Resistance vs. Junction Temperature
1.6
VDS = 15 V
ID = 8.1 A
VGS = 10 V
ID = 8.1 A
8
1.4
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
20
VDS − Drain-to-Source Voltage (V)
10
6
4
2
1.2
1.0
0.8
0
0
3
6
9
12
0.6
−50
15
−25
0
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.10
r DS(on) − On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
1
0.0
25
TJ − Junction Temperature (_C)
30
I S − Source Current (A)
15
0.08
ID = 8.1 A
0.06
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
Document Number: 72269
S-50153—Rev. B, 31-Jan-05
1.2
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
www.vishay.com
3
Si9410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
40
ID = 250 mA
−0.0
Power (W)
V GS(th) Variance (V)
0.2
−0.2
30
20
−0.4
10
−0.6
−0.8
−50
−25
0
25
50
75
100
125
0
10−3
150
10−2
10−1
TJ − Temperature (_C)
10
100
600
Safe Operating Area
100
IDM Limited
*rDS(on) Limited
P(t) = 0.0001
10
I D − Drain Current (A)
1
Time (sec)
P(t) = 0.001
1
ID(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
TA = 25_C
Single Pulse
P(t) = 10
dc
BVDSS Limited
0.01
0.1
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
10
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
www.vishay.com
4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72269
S-50153—Rev. B, 31-Jan-05
Si9410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72269.
Document Number: 72269
S-50153—Rev. B, 31-Jan-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1