Si3981DV New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.185 @ VGS = −4.5 V −1.9 0.260 @ VGS = −2.5 V −1.6 0.385 @ VGS = −1.8 V −0.7 APPLICATIONS D Battery Switch for Portable Devices D Computers − Bus Switch − Load Switch S1 TSOP-6 Top View G1 3 mm 1 6 D1 S2 2 5 S1 G2 3 4 D2 S2 G1 2.85 mm Ordering Information: Si3981DV-T1—E3 Marking Code: MCxxx G2 D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Diode Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −1.9 −1.6 −1.5 −1.3 IDM −8 −1.0 −0.72 1.08 0.80 0.69 0.51 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 97 115 132 155 78 95 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72502 S-40575—Rev. C, 29-Mar-04 www.vishay.com 1 Si3981DV New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.40 Typ Max Unit −1.1 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea −1 VDS = −20 V, VGS = 0 V, TJ = 85_C −10 VDS = −5 V, VGS = −4.5 V mA −5 A 0.146 0.185 VGS = −2.5 V, ID = −1.6 A 0.210 0.260 VGS = −1.8 V, ID = −0.7 A 0.306 0.385 gfs VDS = −5 V, ID = −1.9 A 4 VSD IS = −1.0 A, VGS = 0 V −0.84 −1.1 3.2 5 rDS(on) Voltagea VDS = −20 V, VGS = 0 V VGS = −4.5 V, ID = −1.9 A Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance VDS = −10 V, VGS = −4.5 V, ID = −1.9 A 0.84 Rg Turn-On Delay Time f = 1 MHz 6 td(on) Rise Time tr Turn-Off Delay Time VDD = −10 10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 0.42 IF = −1.00 A, di/dt = 100 A/ms W 30 45 50 85 45 85 21 50 20 40 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 8 8 VGS = 5 thru 3 V 6 2.5 V 5 4 3 2V 2 1 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 25_C 6 125_C 5 4 3 2 1 1.5 V 0 TC = −55_C 7 I D − Drain Current (A) I D − Drain Current (A) 7 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS − Gate-to-Source Voltage (V) Document Number: 72502 S-40575—Rev. C, 29-Mar-04 Si3981DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 0.6 400 C − Capacitance (pF) r DS(on)− On-Resistance ( W ) 350 VGS = 1.8 V 0.5 0.4 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 300 250 Ciss 200 150 100 Coss 50 Crss 0.0 0 0 1 2 3 4 5 6 7 0 4 ID − Drain Current (A) VDS = 10 V ID = 1.9 A 3 2 1.2 1.0 0.8 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.6 −50 4.5 −25 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage r DS(on)− On-Resistance ( W ) I S − Source Current (A) 25 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.5 TJ = 150_C TJ = 25_C 0.4 ID = 1.9 A 0.3 0.2 0.1 0.0 0.1 0.00 0 TJ − Junction Temperature (_C) 10 1 20 VGS = 4.5 V ID = 1.9 A 1.4 4 0 0.0 16 On-Resistance vs. Junction Temperature 1.6 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 5 12 VDS − Drain-to-Source Voltage (V) Gate Charge 6 8 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 72502 S-40575—Rev. C, 29-Mar-04 1.5 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si3981DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power, Junction-to-Ambient 25 0.2 20 0.1 Power (W) V GS(th) Variance (V) Threshold Voltage 0.3 ID = 250 mA 0.0 15 10 −0.1 5 −0.2 −50 0 −25 0 25 50 75 100 125 150 0.001 0.01 0.1 100 10 I D − Drain Current (A) 1 10 Time (sec) TJ − Temperature (_C) Safe Operating Area, Junction-to-Case IDM Limited rDS(on) Limited 1 1 ms ID(on) Limited 0.1 10 ms 100 ms TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 10 s, 1 s dc 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 132_C/W 0.02 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72502 S-40575—Rev. C, 29-Mar-04 Si3981DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72502 S-40575—Rev. C, 29-Mar-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1