Si3469DV Vishay Siliconix New Product P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.030 @ VGS = −10 V −6.7 0.051 @ VGS = −4.5 V −5.1 APPLICATIONS D Load Switch − Notebook PC − Game Machine − Desktop TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Ordering Information: Si3469DV-T1—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −5.0 −6.7 −5.3 −4.0 IDM Continuous Source Current (Diode Conduction)a −25 −1.7 −0.95 2.0 1.14 1.3 0.73 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 90 110 25 30 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72676 S-40271—Rev. A, 23-Feb-04 www.vishay.com 1 Si3469DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −1.0 Typ Max Unit −3 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea VDS = 0 V, VGS = "20 V Diode Forward Voltagea −1 VDS = −20 V, VGS = 0 V, TJ = 85_C −5 VDS v −5 V, VGS = −10 V rDS(on) DS( ) Forward Transconductancea VDS = −20 V, VGS = 0 V −25 mA A VGS = −10 V, ID = −6.7 A 0.024 0.030 VGS = −4.5 V, ID = −2 A 0.041 0.051 gfs VDS = −15 V, ID = −6.7 A 15 VSD IS = −1.7 A, VGS = 0 V −0.8 −1.2 20 30 VDS = −10 V, VGS = −10 V, ID = −6.7 A 3.8 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance 4.8 Rg Turn-On Delay Time f = 1 MHz 9 td(on) Rise Time tr Turn-Off Delay Time VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = −1.7 A, di/dt = 100 A/ms W 10 15 12 20 50 75 35 55 25 50 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 25 25 VGS = 10 thru 5 V 20 15 I D − Drain Current (A) I D − Drain Current (A) 20 4V 10 5 15 10 TC = 125_C 5 25_C 3V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 1.0 2.0 −55_C 3.0 4.0 5.0 VGS − Gate-to-Source Voltage (V) Document Number: 72676 S-40271—Rev. A, 23-Feb-04 Si3469DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1500 0.14 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.16 0.12 0.10 0.08 VGS = 4.5 V 0.06 0.04 1200 Ciss 900 600 Coss VGS = 10 V 300 Crss 0.02 0.00 0 0 5 10 15 20 25 0 4 ID − Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 6.7 A VGS = 10 V ID = 6.7 A 8 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 VDS − Drain-to-Source Voltage (V) 10 6 4 2 1.2 1.0 0.8 0 0 4 8 12 16 0.6 −50 20 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 30 I S − Source Current (A) 8 0.08 ID = 2 A ID = 6.7 A 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72676 S-40271—Rev. A, 23-Feb-04 1.2 1.4 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si3469DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 50 0.4 40 ID = 250 mA 0.2 30 Power (W) V GS(th) Variance (V) Threshold Voltage 0.6 0.0 20 −0.2 10 −0.4 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited P(t) = 0.0001 I D − Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 dc TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72676 S-40271—Rev. A, 23-Feb-04 Si3469DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72676 S-40271—Rev. A, 23-Feb-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1