SUPERTEX DN3525N8

DN3525
N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
BVDSX /
BVDGX
RDS(ON)
(max)
IDSS
(min)
TO-243AA*
Die**
250V
6.0Ω
300mA
DN3525N8
DN3525NW
Product marking for TO-243AA:
DN5C❋
Where ❋ = 2-week alpha date code
* Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
** Die in wafer form.
Features
Advanced DMOS Technology
❏ High input impedance
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
❏ Normally-on switches
❏ Solid state relays
Package Options
❏ Converters
❏ Linear amplifiers
❏ Constant current sources
❏ Power supply circuits
❏ Telecom
D
G
D
S
TO-243AA
(SOT-89)
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSX
Drain-to-Gate Voltage
BVDGX
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
-55°C to +150°C
Note: See Package Outline section for dimensions.
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products,
DN3525
Thermal Characteristics
Package
ID (continuous)*
TO-243AA
ID (pulsed)
360mA
Power Dissipation
@ TA = 25°C
1.6W†
600mA
θjc
θja
°C/W
°C/W
15
78†
IDR*
IDRM
360mA
600mA
* ID (continuous) is limited by max rated Tj.
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
BVDSX
Drain-to-Souce Breakdown Voltage
250
VGS(OFF)
Gate-to-Source OFF Voltage
-1.5
∆VGS(OFF)
Typ
Max
Unit
Conditions
V
VGS = -5.0V, ID = 100µA
-3.5
V
VDS = 15V, ID = 1.0mA
Change in VGS(OFF) with Temperature
4.5
mV/°C
VDS = 15V, ID = 1.0mA
IGSS
Gate Body Leakage Current
100
nA
VGS = ±20V, VDS = 0V
ID(OFF)
Drain-to-Source Leakage Current
1.0
µA
VGS = -5.0V, VDS = Max Rating
1.0
mA
VGS = -5.0V, VDS = 0.8 Max Rating
TA = 125°C
mA
VGS = 0V, VDS = 15V
IDSS
Saturated Drain-to-Source Current
300
RDS(ON)
Static Drain-to-Source
ON-State Resistance
6.0
Ω
VGS = 0V, ID = 200mA
∆RDS(ON)
Change in RDS(ON) with Temperature
1.1
%/°C
VGS = 0V, ID = 200mA
GFS
Forward Transconductance
mg
Ω
ID = 150mA, VDS=10V
CISS
Input Capacitance
270
350
COSS
Common Source Output Capacitance
20
60
pF
VGS = -5.0V, VDS = 25V, f =1.0Mhz
CRSS
Reverse Transfer Capacitance
5.0
20
td(ON)
Turn-ON Delay Time
20
tr
Rise Time
25
td(OFF)
Turn-OFF Delay Time
25
RGEN = 25Ω,
tf
Fall Time
40
VGS = 0V to -10V
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
225
VDD = 25V,
ns
800
ID = 150mA,
V
VGS = -5.0V, ISD = 150mA
ns
VGS = -5.0V, ISD = 150mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
0V
90%
PULSE
GENERATOR
INPUT
-10V
10%
t(ON)
td(ON)
Rgen
t(OFF)
tr
td(OFF)
OUTPUT
tF
D.U.T.
VDD
10%
INPUT
10%
OUTPUT
0V
90%
90%
2
Typical Performance Curves
Output Characteristics
Saturation Characteristics
1.4
1.4
VGS=+2V
VGS=0V
1.0
ID (Amperes)
ID (Amperes)
1.2
VGS=-0.5V
0.8
VGS=-0.8V
0.6
VGS=-1V
VGS=-1.5V
0.2
0V
0.8
-0.5V
0.6
-0.8V
0
50
100
150
200
VDS (Volts)
0.0
250
-1V
1.0
4
6
8
TO-243AA
1.6
0.6
PD (Watts)
T A =25°C
T A =125°C
0.4
0.2
1.2
0.8
0.4
0.0
0.0
0.2
0.4
0.6
ID (Milliamperes)
0.8
0.0
1.0
Maximum Rated Safe Operating Area
10
Thermal Resistance (normalized)
TO-243AA (Pulsed)
TO-243AA (DC)
0.1
0.01
10
VDS (Volts)
100
0
1.0
T A =25°C
1
2
2.0
0.8
1.0
0
-2V
10
Power Dissipation vs. Ambient Temperature
T A =-55°C
V DS =10V
-1.5V
VDS (Volts)
Transconductance vs. Drain Current
GFS (Siemens)
1.0
0.2
VGS=-2V
0.0
ID (Amperes)
VGS = +2V
0.4
0.4
0.001
1.2
3
50
75
TA (°C)
100
125
150
Thermal Response Characteristics
0.8
0.6
TO-243AA
TA = 25 °C
PD = 1.6W
0.4
0.2
0
0.001
1000
25
0.01
0.1
tp (seconds)
1
10
Typical Performance Curves
On Resistance vs. Drain Current
BVDSV Variation with Temperature
25
1.2
TJ = 25°C
VGS = -5V
20
RDS(ON) (ohms)
BVDSV (Normalized)
ID = 100µA
1.1
1.0
VGS = 0V
15
10
0.9
5
0
50
100
0
0.0
150
0.2
0.4
1.0
1.2
VGS(OFF) and RDS(ON) w/ Temperature
Transfer Characteristics
2000
VDS = 10V
1.3
2.4
1.2
2.2
VGS(OFF) (normalized)
TA = -55°C
1600
ID (Milliamperes)
0.8
ID (Amperes)
TJ (°C)
TA = 25°C
1200
TA = 125°C
800
400
1.1
2.0
VGS(OFF) @ 1mA, 15V
1.0
1.8
0.9
1.6
0.8
1.4
0.7
RDS(on) @ 0V, 200mA
-3
-2
-1
0
1
1.2
0.6
1.0
0.5
0.8
0.6
0.4
0
-50
2
-25
0
25
VGS (Volts)
50
75
100
125 150
TJ (°C)
Gate Drive Dynamic Characteristics
Capacitance vs. Drain Source Voltage
3
350
ID = 200mA
VGS = -5V
2
300
1
250
VDS=30V
VGS (volts)
C (picofarads)
0.6
RDS(ON) (normalized)
0.8
-50
200
150
CISS
100
0
-1
-2
-3
50
-4
COSS
CRSS
-5
0
0
10
20
30
0
40
1000
2000
3000
4000
5000
QG (picocoulombs)
VDS (volts)
12/13/010
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com