[ /Title (RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10) /Subject (-25A, 100V, 80V, 0.150 Ohm, PChannel Power MOSFETs) /Author () /Keywords (25A, 100V a80V, 0.150 Ohm, PChannel Power MOSFETs) /Creator () /DOCIN FO pdfmark RFH25P08, RFH25P10, RFK25P08, RFK25P10 Semiconductor -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -25A, -100V and -80V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.150Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA49230. Ordering Information PART NUMBER PACKAGE BRAND RFH25P08 TO-218AC RFH25P08 RFH25P10 TO-218AC RFH25P10 RFK25P08 TO-204AE RFK25P08 RFK25P10 TO-204AE RFK25P10 Symbol D G NOTE: When ordering, use the entire part number. S Packaging JEDEC TO -218AC DRAIN JEDEC TO-204AE DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 6-1 File Number 1632.1 RFH25P08, RFH25P10, RFK25P08, RFK25P10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 (for TO-218AC). . . . . . . . . . . . . . Tpkg RFH25P08 RFK25P08 -80 -80 -25 -60 ±20 150 1.2 -55 to 150 RFH25P10 RFK25P10 -100 -100 -25 -60 ±20 150 1.2 -55 to 150 UNITS V V A A V W W/oC oC 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS RFH25P08, RFK25P08 -80 - - V RFH25P10, RFK25P10 -100 - - V VGS = VDS, ID = 250µA, (Figure 8) -2 - -4 V VDS = Rated BVDSS, VGS = 0 - - -1 µA VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 125oC - - -25 µA VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current SYMBOL BVDSS VGS(TH) IDSS IGSS TEST CONDITIONS ID = 250µA, VGS = 0V Drain to Source On Resistance (Note 2) rDS(ON) ID = 25A, VGS = -10V, (Figures 6, 7) - - 0.150 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = -25A, VGS = -10V - - -3.75 V ID ≈ 12.5A, VDS = -50V, RGS = 50Ω, VGS = -10V, RL = 4.0Ω (Figures 10, 11, 12) - 35 50 ns - 165 250 ns td(OFF) - 270 400 ns tf - 165 250 ns - - 3000 pF - - 1500 pF - - 600 pF Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse-Transfer Capacitance CRSS Thermal Resistance Junction to Case RθJC VGS = 0V, VDS = -25V, f = 1MHz (Figure 9) - - 0.83 oC/W MIN TYP MAX UNITS ISD = -12.5A - - -1.4 V ISD = -4A, dISD/dt = 100A/µs - 300 - ns RFK25P08, RFK25P10 Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time VSD trr TEST CONDITIONS NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 6-2 RFH25P08, RFH25P10, RFK25P08, RFK25P10 Unless Otherwise Specified 1.2 30 1.0 25 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 20 15 10 5 0.2 0 25 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 DC OPERATION OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 VDSS(MAX) = -80V RFH25P08, RFK25P08 VDSS(MAX) = -100V RFH25P10, RFK25P10 0.1 -1 -10 -100 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 VGS = -8V VGS = -7V 40 VGS = -6V 20 -1000 VGS = -5V 0 -4 -2 -8 -6 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. SATURATION CHARACTERISTICS 25oC 125oC 20 10 125oC ON RESISTANCE (Ω) 0.20 TC = -40oC rDS(ON), DRAIN TO SOURCE IDS(ON), DRAIN TO SOURCE CURRENT (A) VGS = -20V VGS = -4V 30 0 0 150 VGS = -10V 0 VDS = -10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 25oC 80 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 40 125 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 100 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE TC = 25oC, TJ = MAX RATED ID MAX CONTINUOUS 75 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 100 50 VGS = -10V PULSE DURATION = 80µs 0.16 DUTY CYCLE ≤ 2% TC = 125oC 0.12 TC = 25oC 0.08 TC = -40oC 0.04 -40oC 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) -10 0 10 20 30 40 ID, DRAIN CURRENT (A) FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 6-3 50 RFH25P08, RFH25P10, RFK25P08, RFK25P10 Typical Performance Curves NORMALIZED GATE THRESHOLD VOLTAGE ID = 25A VGS = -10V 3 2 1 0 -50 0 50 100 150 1.6 1.4 ID = 250µA VGS = VDS 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 0 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE VDS, DRAIN TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 3000 CISS CISS 2000 COSS 1000 CRSS 0 10 100 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS COSS 150 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 4000 CRSS 100 50 TJ , JUNCTION TEMPERATURE (oC) BVDSS VDD = BVDSS 75 GATE SOURCE VOLTAGE VDD = BVDSS 8 6 0.75BVDSS 0.50BVDSS 0.25BVDSS RL = 4Ω IG(REF) = 1.5mA VGS = -10V 50 25 4 2 DRAIN SOURCE VOLTAGE 0 0 -10 -20 -30 -40 -50 20 VDS, DRAIN TO SOURCE VOLTAGE (V) IG(REF) t, TIME (µs) IG(ACT) 80 0 IG(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms tON tOFF td(OFF) td(ON) tr 0 RL DUT VGS RG + 10% 10% VDS VDD tf VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 6-4 VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 4 Unless Otherwise Specified (Continued)