Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current - - 2.1 A - 70 84 mΩ VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics drain-source on-state resistance RDSon [1] VGS = 10 V; ID = 1.9 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT23 (TO-236AB) S 017aaa253 http://www.twtysemi.com [email protected] 1 of 3 Product specification PMV90EN 30 V, single N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package PMV90EN Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV90EN EC% [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - 30 V VGS gate-source voltage drain current ID peak drain current IDM total power dissipation Ptot -20 20 V VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 2.1 A VGS = 10 V; Tamb = 25 °C [1] - 1.9 A VGS = 10 V; Tamb = 100 °C [1] - 1.2 A - 7.6 A - 310 mW Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C [2] [1] Tsp = 25 °C - 455 mW - 2085 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.5 A Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. http://www.twtysemi.com [email protected] 2 of 3 Product specification PMV90EN 30 V, single N-channel Trench MOSFET 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions Min Typ Max Unit [1] - 350 400 K/W [2] - 240 275 K/W [2] - 186 215 K/W - 50 60 K/W Conditions Min Typ Max Unit in free air in free air; t ≤ 5 s thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. 7. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tamb = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tamb = 150 °C - - 10 µA IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 1.9 A; Tj = 25 °C - 70 84 mΩ VGS = 10 V; ID = 1.9 A; Tj = 150 °C - 109 130 mΩ VGS = 4.5 V; ID = 1.6 A; Tj = 25 °C - 90 115 mΩ VDS = 10 V; ID = 1.9 A; Tj = 25 °C - 5.7 - S VDS = 15 V; ID = 1.9 A; VGS = 10 V; Tj = 25 °C - 2.6 4 nC - 0.42 - nC - 0.34 - nC - 132 - pF - 31 - pF - 13 - pF - 3 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 15 V; ID = 1.9 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C tr rise time - 8 - ns td(off) turn-off delay time - 15 - ns tf fall time - 5 - ns - 0.7 1.2 V Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = 0.5 A; VGS = 0 V; Tj = 25 °C [email protected] 3 of 3