Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology 1.3 Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 20 V VGS gate-source voltage -8 - 8 V ID drain current - - 2.2 A - 64 76 mΩ VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 2 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . http://www.twtysemi.com [email protected] 1 of 4 Product specification PMV65UN 20 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 G 2 S TO-236AB (SOT23) 017aaa253 3. Ordering information Table 3. Ordering information Type number Package PMV65UN Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code [1] PMV65UN ED% [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - 20 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 2.2 A VGS = 4.5 V; Tamb = 25 °C [1] - 2 A VGS = 4.5 V; Tamb = 100 °C [1] - 1.3 A - 8 A [2] - 310 mW [1] - 455 mW - 2170 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C http://www.twtysemi.com [email protected] 2 of 4 Product specification PMV65UN 20 V, single N-channel Trench MOSFET Symbol Parameter Tj Conditions Min Max Unit junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.7 A Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 350 402 K/W [2] - 240 275 K/W [2] - 195 225 K/W - 50 58 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.7 1 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tamb = 25 °C - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 100 nA http://www.twtysemi.com [email protected] 3 of 4 Product specification PMV65UN 20 V, single N-channel Trench MOSFET Symbol Conditions Min Typ Max Unit VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 4.5 V; ID = 2 A; Tj = 25 °C - 64 76 mΩ VGS = 4.5 V; ID = 2 A; Tj = 150 °C - 94 111 mΩ VGS = 2.5 V; ID = 1.7 A; Tj = 25 °C - 78 97 mΩ VGS = 1.8 V; ID = 0.8 A; Tj = 25 °C - 110 156 mΩ VDS = 10 V; ID = 2 A; Tj = 25 °C - 8.7 - S total gate charge VDS = 10 V; ID = 2 A; VGS = 4.5 V; - 2.6 3.9 nC QGS gate-source charge Tj = 25 °C - 0.3 - nC QGD gate-drain charge - 0.7 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 183 - pF Coss output capacitance Tj = 25 °C - 52 - pF Crss reverse transfer capacitance - 26 - pF td(on) turn-on delay time VDS = 10 V; ID = 2 A; VGS = 4.5 V; - 6 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 18 - ns td(off) turn-off delay time - 21 - ns tf fall time - 12 - ns - 0.8 1.2 V RDSon gfs Parameter drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = 0.7 A; VGS = 0 V; Tj = 25 °C [email protected] 4 of 4