RFG30P06, RFP30P06, RF1S30P06SM
Data Sheet
July 1999
30A, 60V, 0.065 Ohm, P-Channel Power
MOSFETs
• 30A, 60V
Formerly developmental type TA09834.
Ordering Information
PACKAGE
TO-247
RFG30P06
RFP30P06
TO-220AB
RFP30P06
RF1S30P06SM
TO-263AB
F1S30P06
• rDS(ON) = 0.065Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
BRAND
RFG30P06
2437.3
Features
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They are designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
PART NUMBER
File Number
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A.
S
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
4-133
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFG30P06, RFP30P06, RF1S30P06SM
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Deratlng Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFG30P06, RFP30P06
RF1S30P06SM
-60
-60
±20
30
Refer to Peak Current Curve
Refer to UIS Curve
135
0.9
-55 to 175
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
300
260
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
-60
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
-2
-
-4
V
IDSS
VDS = -60V, VGS = 0V
-
-
-1
µA
VDS = 0.8 x Rated BVDSS, TC = 150oC
-
-
-25
µA
VGS = ±20V
-
-
±100
nA
ID = -30A, VGS = -10V (Figure 9)
-
-
0.065
Ω
VDD = -30V, ID = 15A, RL = 2.00Ω, VGS = -10V
RG = 6.25Ω
(Figure 13)
-
-
80
ns
-
15
-
ns
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IGSS
rDS(ON)
Turn-On Time
t(ON)
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
tr
-
23
-
ns
td(OFF)
-
28
-
ns
tf
-
18
-
ns
t(OFF)
-
-
100
ns
-
140
170
nC
-
70
85
nC
Total Gate Charge
Qg(TOT)
VGS = 0 to -20V
Gate Charge at -10V
Qg(-10)
VGS = 0 to -10V
Threshold Gate Charge
Qg(TH)
VGS = 0 to -2V
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Thermal Resistance, Junction to Case
RθJC
Thermal Resistance, Junction to Ambient
RθJA
VDD = -48V, ID = 30A,
RL = 1.6Ω,
IG(REF) = 1.6mA
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
TO-220, TO-263
-
5.5
6.6
nC
-
3200
-
pF
-
800
-
pF
-
175
-
pF
-
-
1.11
oC/W
-
-
62
oC/W
30
oC/W
TO-247
Source to Drain Diode Specifications
MIN
TYP
MAX
MAX
Source to Drain Diode Voltage (Note 2)
PARAMETER
SYMBOL
VSD
ISD = -30A
TEST CONDITIONS
-
-
-1.5
V
Diode Reverse Recovery Time
tRR
ISD = -30A, dISD/dt = -100A/µs
-
-
150
ns
NOTE:
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4-134
RFG30P06, RFP30P06, RF1S30P06SM
Typical Performance Curves
Unless Otherwise Specified
-40
1.0
ID , DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
-30
-20
-10
0.2
0
0
25
50
75
100
125
150
0
175
25
50
TC , CASE TEMPERATURE (oC)
75
100
125
150
175
TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
0.5
0.2
PDM
0.1
0.1
0.05
t1
t2
0.02
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-500
-200
100µs
1ms
-10
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
TC = 25oC
TJ = MAX RATED
-1
100ms
DC
-10
-1
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
4-135
-100
IDM , PEAK CURRENT (A)
-100
ID , DRAIN CURRENT (A)
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
VGS = -20V
VGS = -10V
175 – T C
I = I 25 ----------------------
150
-100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-10
10-5
TC = 25oC
10-4
10-3
10-2
10-1
100
t, PULSE WIDTH (s)
FIGURE 5. PEAK CURRENT CAPABILITY
101
RFG30P06, RFP30P06, RF1S30P06SM
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-100
-75
-10
VGS = -10V
ID, DRAIN CURRENT (A)
IAS , AVALANCHE CURRENT (A)
VGS = -20V
STARTING TJ = 25oC
STARTING TJ = 150oC
If R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
-60
VGS = -8V
VGS = -7V
-45
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
-30
VGS = -6V
-15
VGS = -5V
If R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
-1
0.1
VGS = -4.5V
0
1
10
tAV, TIME IN AVALANCHE (ms)
0
100
-2
-4
-6
-8
-10
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322,
FIGURE 7. SATURATION CHARACTERISTICS
2
-75
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = -15V
-60
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
IDS(ON), DRAIN TO SOURCE CURRENT (A)
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
25oC
-55oC
-45
175oC
-30
-15
0
-2
0
-8
-6
-4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = -10V, ID = 30A
1.5
1
0.5
0
-80
-10
-40
FIGURE 8. TRANSFER CHARACTERISTICS
80
120
160
200
2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
VGS = VDS, ID = 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
40
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2
1.5
1
0.5
0
-80
0
TJ , JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
-40
0
40
80
120
160
200
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
4-136
ID = 250µA
1.5
1
0.5
0
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
RFG30P06, RFP30P06, RF1S30P06SM
Unless Otherwise Specified
C, CAPACITANCE (pF)
CISS
3000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
2000
COSS
-60
VDS, DRAIN TO SOURCE VOLTAGE (V)
4000
(Continued)
1000
CRSS
-10
VDD = BVDSS
-7.5
RL = 2.0Ω
IG(REF) = -1.6mA
VGS = -10V
-10
-15
-20
-5
-30
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
-15
-2.5
DRAIN SOURCE VOLTAGE
0
-5
VDD = BVDSS
-45
0
0
GATE
SOURCE
VOLTAGE
-25
20
VDS , DRAIN TO SOURCE VOLTAGE (V)
IG(REF)
IG(ACT)
0
t, TIME (µs)
80
IG(REF)
IG(ACT)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS
tAV
L
0
VARY tP TO OBTAIN
REQUIRED PEAK IAS
-
RG
+
0V
VGS
VDD
DUT
VDD
tP
IAS
IAS
VDS
tP
0.01Ω
BVDSS
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(OFF)
td(ON)
tr
VDS
0
RL
tf
10%
10%
VGS
VDS
VDD
+
VGS
DUT
RGS
VGS
0
90%
90%
10%
50%
50%
PULSE WIDTH
90%
FIGURE 16. SWITCHING TIME TEST CIRCUIT
4-137
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
VGS, GATE TO SOURCE VOLTAGE (V)
Typical Performance Curves
RFG30P06, RFP30P06, RF1S30P06SM
Test Circuits and Waveforms
(Continued)
VDS
RL
VDS
Qg(TH)
0
VGS = -2V
VGS
-
VGS = -10V
-VGS
VDD
Qg(-10)
+
DUT
VGS = -20V
VDD
Ig(REF)
Qg(TOT)
0
Ig(REF)
FIGURE 18. GATE CHARGE TEST CIRCUIT
4-138
FIGURE 19. GATE CHARGE WAVEFORMS
RFG30P06, RFP30P06, RF1S30P06SM
PSPICE Electrical Model
.SUBCKT RFP30P06 2 1 3;
REV 8/21/94
CA 12 8 3.23e-9
CB 15 14 3.23e-9
CIN 6 8 3.08e-9
ESG
-
+
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
DRAIN
2
LDRAIN
5
8
6
10
RSCL2
RSCL1
+ 51
5
51
EBREAK 5 11 17 18 -77.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
EBREAK
ESCL
+
17
18
-
50
RDRAIN
DPLCAP
GATE
IT 8 17 1
1
LDRAIN 2 5 1e-9
LGATE 1 9 4.92e-9
LSOURCE 3 7 4.60e-9
EVTO
20 + 18 8
LGATE RGATE
VTO +
DBODY
16
21
6
9
MOS2
MOS1
DBREAK
RIN
CIN
8
RSOURCE
LSOURCE
7
3
SOURCE
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
S2A
S1A
12
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 39.85e-3
RGATE 9 20 2.34
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 2.56e-3
RVTO 18 19 RVTOMOD 1
11
13
8
S1B
RBREAK
15
14
13
17
18
S2B
13
CA
RVTO
CB
+
EGS
-
14
+
6
8
EDS
-
6
8
IT
19
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.81
ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/114,5))}
.MODEL DBDMOD D (IS=4.7e-13 RS=1.31e-2 TRS1=1.39e-4 TRS2=-4.77e-6 CJO=2.85e-9 TT=8.81e-8)
.MODEL DBKMOD D (RS=2.23e-1 TRS1=1.97e-3 TRS2=-2.37e-5)
.MODEL DPLCAPMOD D (CJO=0.78e-9 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.75 KP=10.83 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=9.08e-4 TC2=-1.72e-6)
.MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.02e-5)
.MODEL RSCLMOD RES (TC1=2.09e-3 TC2=5.88e-7)
.MODEL RVTOMOD RES (TC1=-2.99e-3 TC2=1.40e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.4 VOFF=1.4)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.4 VOFF=3.4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.2 VOFF=-3.8)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.8 VOFF=1.2)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature
Options; authors, William J. Hepp and C. Frank Wheatley.
4-139
RFG30P06, RFP30P06, RF1S30P06SM
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4-140
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