UNISONIC TECHNOLOGIES CO., LTD 11NM70-SH Power MOSFET 11A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 11NM70-SH is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 11NM70-SH is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. FEATURES * RDS(ON) < 0.7Ω @ VGS=10V, ID=5.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11NM70L-TA3-T 11NM70G-TA3-T 11NM70L-TF3-T 11NM70G-TF3-T 11NM70L-TF1-T 11NM70G-TF1-T 11NM70L-TM3-T 11NM70G-TM3-T 11NM70L-TMS2-T 11NM70G-TMS2-T 11NM70L-TN3-R 11NM70G-TN3-R 11NM70L-T2Q-T 11NM70G-T2Q-T 11NM70L-T2S-T 11NM70G-T2S-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-251 TO-251S2 TO-252 TO-262 TO-262S Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tube Tube 1 of 7 QW-R209-041.D 11NM70-SH Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-041.D 11NM70-SH Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain to Source Voltage Gate to Source Voltage Continuous Drain Current SYMBOL VDSS VGSS TC=25°C TC=100°C Pulsed Drain Current (Note 3) (TC=25°C) Single Pulsed Avalanche Energy(Note 4) Peak Diode Recovery dv/dt (Note 5) ID IDM EAS dv/dt RATINGS 700 ±30 11 (Note 2) 7 (Note 2) 44 (Note 2) 20 4.5 24 UNIT V V A A A mJ V/ns W RATINGS 62.5 5.2 UNIT °C/W °C/W 0.77 °C/W 1.56 °C/W TO-220F/TO-220F1 TO-220/TO-262 162 W (TC=25°C) TO-262S TO-251/TO-252 80 W TO-251S2 PD Power Dissipation TO-220F/TO-220F1 0.19 W/°C TO-220/TO-262 1.3 W/°C Derate above 25°C TO-262S TO-251/TO-252 0.64 W/°C TO-251S2 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating : Pulse width limited by maximum junction temperature 4. L=10mH, IAS=2A, VDD= 50V, RG=25Ω, Starting TJ=25°C 5. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient Junction to Case TO-220F/TO-220F1 TO-220/TO-262 TO-262S TO-251/TO-252 TO-251S2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC 3 of 7 QW-R209-041.D 11NM70-SH Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C VDS=700V, VGS=0V Drain-Source Leakage Current IDSS VDS=700V, TJ=125°C Gate-Source Leakage Current IGSS VDS=0V ,VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS= VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.5A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A , Gate-Source Charge QGS IG=100µA (Note 1, 2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=30V, VGS=10V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =11A, VGS=0V Reverse Recovery Time trr IS=11A, VGS=0V di/dt=100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 V V/°C 10 µA 100 µA ±100 nA 0.5 2.5 0.6 4.5 0.7 V Ω 850 220 12 1200 440 18 pF pF pF 95 90 300 125 nC nC nC ns ns ns ns 70 8 18 65 62 220 78 11 44 1.4 400 54 A A V ns μC 4 of 7 QW-R209-041.D 11NM70-SH Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-041.D 11NM70-SH Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-041.D 11NM70-SH Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 200 150 100 50 0 200 150 100 50 0 200 400 600 800 0 0 1000 4 2 0 0 0.5 1 1.5 2.5 2 Drain to Source Voltage, VDS (V) Body-Diode Continuous Current, IS (A) Drain Current, ID (A) 6 3 4 6 5 Body-Diode Continuous Current vs. Source to Drain Voltage Drain-Source On-State Resistance Characteristics VGS=10V, ID=5.5A 2 Gate Threshold Voltage, VTH (V) Drain-Source Breakdown Voltage, BVDSS (V) 8 1 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-041.D