Datasheet

UNISONIC TECHNOLOGIES CO., LTD
6N60K-MTQ
Power MOSFET
6A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 6N60K-MTQ is a high voltage power MOSFET
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications at power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 1.8Ω @ VGS = 10 V, ID = 3 A
* Fast Switching Capability
* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N60KL-TF1-T
6N60KG-TF1-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
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6N60K-MTQ

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
6
A
Continuous Drain Current
ID
6
A
Pulsed Drain Current (Note 2)
IDM
24
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
181
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.2
V/ns
Power Dissipation
PD
36
W
Junction Temperature
TJ
+150
°C
Operation Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=11.6mH, IAS=5.6A, VDD=90V, RG=25 Ω, Starting TJ = 25°C
4. ISD ≤ 6A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
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RATING
62.5
3.47
UNIT
°C/W
°C/W
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
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
Breakdown Voltage Temperature Coefficient
IGSS
△BVDSS/△T
J
TEST CONDITIONS
VGS=0V, ID=250μA
VDS=600V, VGS=0V
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
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600
1
100
-100
ID=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate-Source Charge
QGS
IG=100μA (Note 1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=30V, VGS=10V, ID=0.5A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 6A
Reverse Recovery Time
tRR
VGS=0V, IS=6A,
dIF/dt = 100 A/μs
Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
MIN TYP MAX UNIT
0.53
2.0
V
μA
nA
V/°C
4.0
1.8
V
Ω
720
70
6.6
pF
pF
pF
48
4.8
5.2
30
25
140
30
nC
nC
nC
ns
ns
ns
ns
450
3.0
6
A
24
A
1.4
V
ns
μC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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