UNISONIC TECHNOLOGIES CO., LTD 2NM70-SH Preliminary Power MOSFET 2.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 2NM70-SH is an Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 2.8Ω @ VGS = 10V , ID = 1.0 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2NM70G-AA3-R 2NM70L-TA3-T 2NM70G-TA3-T 2NM70L-TF1-T 2NM70G-TF1-T 2NM70L-TF2-T 2NM70G-TF2-T 2NM70L-TF3-T 2NM70G-TF3-T 2NM70L-TM3-R 2NM70G-TM3-R 2NM70L-TN3-R 2NM70G-TN3-R Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package SOT-223 TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tape Reel Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R205-140.a 2NM70-SH Preliminary Power MOSFET MARKING SOT-223 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TO-220 / TO-220F / TO-220F1 TO-220F2 / TO-251 / TO-252 2 of 7 QW-R205-140.a 2NM70-SH Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Continuous ID 2.0 A Drain Current Pulsed (Note 2) IDM 8.0 A Avalanche Energy Single Pulsed (Note 3) EAS 64 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 5 V/ns SOT-223 35 W TO-220 45 W Power Dissipation PD TO-220F/TO-220F1 28 W TO-220F2 40 W TO-251/TO-252 30 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=159mH, IAS=0.9A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SOT-223 TO-220/TO-220F Junction to Ambient TO-220F1/TO-220F2 TO-251/TO-252 SOT-223 TO-220 Junction to Case TO-220F/TO-220F1 TO-220F2 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS 125 UNIT °C/W θJA 62.5 °C/W 110 3.57 2.76 4.46 3.13 4.24 °C/W °C/W °C/W °C/W °C/W °C/W θJC 3 of 7 QW-R205-140.a 2NM70-SH Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Breakdown Voltage Temperature △BVDSS/△TJ ID = 250 μA, Referenced to 25°C Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =25V, VGS =0V, f =1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A, Gate-Source Charge QGS ID=100µA (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD (ON) Turn-On Rise Time tR VDS=30V, VGS=10V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Body Diode Reverse Recovery Time trr IS=2.0A, dI/dt=100A/µs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 10 100 -100 0.4 2.5 V μA nA nA V/°С 4.5 2.8 V Ω 150 100 12 pF pF pF 28 3 6.5 34 4.2 90 28 nC nC nC ns ns ns ns 2.0 8.0 1.4 230 1140 A A V nS nC 4 of 7 QW-R205-140.a 2NM70-SH Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-140.a 2NM70-SH Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS VGS 90% 10% tD(ON) tD(OFF) tF tR Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS QG 10V QGS QGD Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform E AS = Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 BVDSS LI 2 2 AS BVDSS - VDD Fig. 4B Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-140.a 2NM70-SH Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-140.a