UNISONIC TECHNOLOGIES CO., LTD 1N50-CB Preliminary Power MOSFET 1.0A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50-CB is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 6.0Ω @ VGS=10V, ID=0.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N50G-AA3-R 1N50L-TM3-T 1N50G-TM3-T 1N50L-TMS-T 1N50G-TMS-T 1N50L-TMS2-T 1N50G-TMS2-T 1N50G-TN3-R 1N50L-TN3-R 1N50L-T92-B 1N50G-T92-B 1N50L-T92-K 1N50G-T92-K Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package SOT-223 TO-251 TO-251S TO-251S2 TO-252 TO-92 TO-92 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tape Reel Tube Tube Tube Tape Reel Tape Box Bulk 1 of 7 QW-R205-108.b 1N50-CB Preliminary Power MOSFET MARKING PACKAGE MARKING SOT-223 TO-251 / TO-251S TO-251S2 / TO-252 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-108.b 1N50-CB ■ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 1.0 A Continuous Drain Current ID 1.0 A Pulsed Drain Current (Note 2) IDM 4.0 A Single Pulsed (Note 3) EAS 80 mJ Avalanche Energy 4.0 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 5.6 V/ns SOT-223 1 W Power Dissipation TO-251/TO-251S 25 W (TC=25°C) TO-251S2/TO-252 TO-92 1.56 W PD SOT-223 0.008 W/°C TO-251/TO-251S Derate above 25°C 0.2 W/°C TO-251S2/TO-252 0.0125 W/°C TO-92 Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 159mH, IAS = 1.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 1.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SOT-223 TO-251/TO-251S Junction to Ambient TO-251S2/TO-252 TO-92 SOT-223 TO-251/TO-251S Junction to Case TO-251S2/TO-252 TO-92 SYMBOL RATINGS 150 UNIT °С/W θJA 110 °С/W 140 125 °С/W °С/W 5 °С/W 80 °С/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC 3 of 7 QW-R205-108.b 1N50-CB Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS IDSS VGS=0V, ID=250μA VDS=500V, VGS=0V Forward VGS=30V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A, IG = 250μA Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD =30V, VGS=10V, ID =0.5A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS=0V, IS =1.0A Reverse Recovery Time trr VGS=0V, IS=1.0A dIF/dt=100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% 3. Essentially Independent of Operating Temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 0.4 2.0 V 10 μA 100 nA -100 nA V/℃ 4.0 6.0 V Ω 120 22 4.7 pF pF pF 10.1 1.2 0.5 24 18 56 27 nC nC nC ns ns ns ns 110 0.28 1.0 A 4.8 A 1.4 V ns μC 4 of 7 QW-R205-108.b 1N50-CB Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-108.b 1N50-CB Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-108.b 1N50-CB Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-108.b