Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10NM65-SH
Power MOSFET
10A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 10NM65-SH is an Super Junction MOSFET Structure.
It uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC 10NM65-SH is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.

FEATURES
* RDS(ON) < 0.68Ω @ VGS=10V, ID = 5.0 A
* High Switching Speed
* Improved dv/dt capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10NM65L-TA3-T
10NM65G-TA3-T
10NM65L-TF3-T
10NM65G-TF3-T
10NM65L-TF1-T
10NM65G-TF1-T
10NM65L-TF2-T
10NM65G-TF2-T
10NM65L-TM3-R
10NM65G-TM3-R
10NM65L-TN3-R
10NM65G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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QW-R209-126.a
10NM65-SH

Power MOSFET
MARKING
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www.unisonic.com.tw
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10NM65-SH

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
Drain Current
Avalanche Energy
Peak Diode Recovery dv/dt (Note 4)
SYMBOL
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
RATINGS
650
±30
10
10
38
420
0.2
4.5
UNIT
V
V
A
A
A
mJ
mJ
V/ns
TO-220/TO-251
90
W
TO-252
TC=25°C
TO-220F/TO-220F1
25
W
TO-220F2
Power Dissipation
PD
TO-220/TO-251
0.72
W/°C
TO-252
Derate above 25°C
TO-220F/TO-220F1
0.2
W/°C
TO-220F2
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=159mH, IAS=2.3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220/TO-220F
TO-220F1/TO-220F2
TO-251/TO-252
TO-220/TO-251
TO-252
TO-220F/TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
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θJA
RATING
62.5
UNIT
°C/W
110
1.38
θJC
°C/W
5
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Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 650V, VGS = 0V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 5.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A ,
Gate-Source Charge
QGS
IG=100µA (Note 1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
VDD=30V, VGS=10V, ID=0.5A,
Turn-On Rise Time
tR
R
Turn-Off Delay Time
tD(OFF)
G=25Ω (Note 1, 2)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
IS =10A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
IS=10A, VGS=0V, dIF/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
650
2.5
1
100
-100
V
µA
nA
nA
4.5
0.68
V
Ω
610
400
35
pF
pF
pF
125
7
20
56
135
250
115
nC
nC
nC
ns
ns
ns
ns
10
A
40
A
1.4
V
350
ns
4.6
μC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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