UNISONIC TECHNOLOGIES CO., LTD 10NM65-SH Power MOSFET 10A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 10NM65-SH is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 10NM65-SH is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. FEATURES * RDS(ON) < 0.68Ω @ VGS=10V, ID = 5.0 A * High Switching Speed * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10NM65L-TA3-T 10NM65G-TA3-T 10NM65L-TF3-T 10NM65G-TF3-T 10NM65L-TF1-T 10NM65G-TF1-T 10NM65L-TF2-T 10NM65G-TF2-T 10NM65L-TM3-R 10NM65G-TM3-R 10NM65L-TN3-R 10NM65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R209-126.a 10NM65-SH Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-126.a 10NM65-SH Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Pulsed (Note 2) Single Pulsed (Note 3) Repetitive (Note 2) Drain Current Avalanche Energy Peak Diode Recovery dv/dt (Note 4) SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt RATINGS 650 ±30 10 10 38 420 0.2 4.5 UNIT V V A A A mJ mJ V/ns TO-220/TO-251 90 W TO-252 TC=25°C TO-220F/TO-220F1 25 W TO-220F2 Power Dissipation PD TO-220/TO-251 0.72 W/°C TO-252 Derate above 25°C TO-220F/TO-220F1 0.2 W/°C TO-220F2 Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=159mH, IAS=2.3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220/TO-220F TO-220F1/TO-220F2 TO-251/TO-252 TO-220/TO-251 TO-252 TO-220F/TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA RATING 62.5 UNIT °C/W 110 1.38 θJC °C/W 5 3 of 7 QW-R209-126.a 10NM65-SH Power MOSFET ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 650V, VGS = 0V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A , Gate-Source Charge QGS IG=100µA (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) VDD=30V, VGS=10V, ID=0.5A, Turn-On Rise Time tR R Turn-Off Delay Time tD(OFF) G=25Ω (Note 1, 2) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS =10A, VGS = 0 V Body Diode Reverse Recovery Time trr IS=10A, VGS=0V, dIF/dt=100A/μs Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 2.5 1 100 -100 V µA nA nA 4.5 0.68 V Ω 610 400 35 pF pF pF 125 7 20 56 135 250 115 nC nC nC ns ns ns ns 10 A 40 A 1.4 V 350 ns 4.6 μC 4 of 7 QW-R209-126.a 10NM65-SH Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-126.a 10NM65-SH Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-126.a 10NM65-SH Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-126.a