Si4562DY Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V 7.1 0.035 at VGS = 2.5 V 6.0 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 2.5 Rated • Compliant to RoHS directive 2002/95/EC SO-8 D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G2 G1 Top View Ordering Information: Si4562DY-T1-E3 (Lead (Pb)-free) Si4562DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 70 °C Maximum Power Dissipationa Operating Junction and Storage Temperature Range ID N-Channel 20 P-Channel - 20 ± 12 7.1 5.7 40 1.7 - 6.2 - 4.9 - 40 - 1.7 Unit V A TJ, Tstg 2.0 1.3 - 55 to 150 °C Symbol N- or P-Channel Unit RthJA 62.5 °C/W PD W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 70717 S09-0867-Rev. C, 18-May-09 www.vishay.com 1 Si4562DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) N-Ch 0.6 1.6 P-Ch - 0.6 - 1.6 VDS = 0 V, VGS = ± 12 V IGSS IDSS VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA N-Ch ± 100 P-Ch ± 100 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch VDS ≥ 5 V, VGS = 4.5 V N-Ch 20 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 20 VGS = 4.5 V, ID = 7.1 A N-Ch 0.019 VGS = - 4.5 V, ID = - 6.2 A P-Ch 0.027 0.033 VGS = 2.5 V, ID = 6.0 A N-Ch 0.025 0.035 VGS = - 2.5 V, ID = - 5.0 A P-Ch 0.040 0.050 VDS = 10 V, ID = 7.1 A N-Ch 27 VDS = - 10 V, ID = - 6.2 A P-Ch 20 IS = 1.7 A, VGS = 0 V N-Ch 1.2 IS = - 1.7 A, VGS = 0 V P-Ch - 1.2 ID(on) RDS(on) gfs VSD V nA µA -5 A 0.025 Ω S V Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Sorce-Drain Reverse Recovery Tme N-Channel VDS = 10 V, VGS = 4.5 V, ID = 7.1 A tr td(off) tf P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 6.2 A N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 25 50 P-Ch 22 35 N-Ch 6.5 P-Ch 7 nC N-Ch 4 P-Ch 3.5 N-Ch 40 P-Ch 27 50 N-Ch 40 60 60 P-Ch 32 50 N-Ch 90 150 P-Ch 95 150 N-Ch 40 60 P-Ch 45 70 IF = 1.7 A, dI/dt = 100 A/µs N-Ch 40 80 IF = - 1.7 A, dI/dt = 100 A/µs P-Ch 40 80 P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω trr N-Ch ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70717 S09-0867-Rev. C, 18-May-09 Si4562DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 5 V thru 3 V 30 I D - Drain Current (A) ID - Drain Current (A) 2.5 V 30 20 2V 10 20 TC = 125 °C 10 25 °C 1 V, 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - 55 °C 0 0.0 4.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 4000 0.08 3200 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 0.06 0.04 VGS = 2.5 V Ciss 2400 1600 Coss 0.02 800 VGS = 4.5 V Crss 0.00 0 0 10 20 30 40 0 4 ID - Drain Current (A) 8 On-Resistance vs. Drain Current 16 20 Capacitance 1.6 5 VGS = 4.5 V ID = 7.1 A VDS = 10 V ID = 7.1 A 1.4 4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 VDS - Drain-to-Source Voltage (V) 3 2 1.2 1.0 0.8 1 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70717 S09-0867-Rev. C, 18-May-09 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4562DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 40 ID = 7.1 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.08 TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 30 0.2 24 ID = 250 µA 0.0 Power (W) VGS(th) Variance (V) 1 - 0.2 18 12 6 - 0.4 - 0.6 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.10 1.00 10.00 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 62.5 °C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 70717 S09-0867-Rev. C, 18-May-09 Si4562DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 5 V, 4.5 V, 4 V, 3.5 V 32 3V 24 25 °C I D - Drain Current (A) I D - Drain Current (A) 32 TC = - 55 °C 2.5 V 16 2V 8 125 °C 24 16 8 1.5 V 0 0 1 2 3 4 5 0 3 4 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 4500 0.08 3600 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 Ciss 2700 1800 Crss Coss 900 0.00 0 0 8 16 24 32 40 0 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 5 VDS = 10 V ID = 6.2 A 4 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 2 VDS - Drain-to-Source Voltage (V) 0.10 0.06 1 Output Characteristics C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 3 2 VGS = 4.5 V ID = 6.2 A 1.2 1.0 0.8 1 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70717 S09-0867-Rev. C, 18-May-09 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 5 Si4562DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 40 TJ = 150 °C 10 TJ = 25 °C 0.08 ID = 6.2 A 0.06 0.04 0.02 0.00 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 30 0.6 V GS(th) Variance (V) 24 ID = 250 µA Power (W) 0.3 18 12 0.0 6 - 0.3 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.10 1.00 10.00 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power vs. Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5 °C/W 3. TJM − TA = PDMZthJA(t) 0.02 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70717. www.vishay.com 6 Document Number: 70717 S09-0867-Rev. C, 18-May-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000