Si4563DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.016 at VGS = 10 V 8 0.019 at VGS = 4.5 V 8 0.025 at VGS = - 10 V -8 0.032 at VGS = - 4.5 V - 7.5 56 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • CCFL Inverter D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 Top View Ordering Information: Si4563DY-T1-E3 (Lead (Pb)-free) Si4563DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 40 - 40 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) 8 -8 TC = 70 °C 8 - 6.5 8b, c - 6.6b, c ID TA = 70 °C 6.5 IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current TC = 25 °C TA = 25 °C b, c - 5.2b, c 20 IS 2.7 - 2.7 1.6b, c - 1.6b, c - 20 ISM 20 Single Pulse Avalanche Current IAS 20 25 EAS 20 31.2 TC = 25 °C 3.25 3.25 TC = 70 °C 2.10 2.10 Maximum Power Dissipation L = 0 1 mH TA = 25 °C PD 2.0 b, c W 1.25b, c TJ, Tstg Operating Junction and Storage Temperature Range mJ 2.0b, c 1.25b, c TA = 70 °C A - 20 Pulsed Source-Drain Current Single Pulse Avalanche Energy V ± 16 TC = 25 °C TA = 25 °C Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Symbol Typ. Max. t ≤ 10 s RthJA 45 Steady State RthJF 29 P-Channel Typ. Max. 62.5 45 62.5 38 29 38 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 °C/W. Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 1 Si4563DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 40 VGS = 0 V, ID = - 250 µA P-Ch - 40 V ID = 250 µA N-Ch 40 ID = - 250 µA P-Ch - 40 ID = 250 µA N-Ch - 4.8 mV/°C IID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 0.8 2.0 VDS = VGS, ID = - 250 µA P-Ch - 0.8 - 2.2 VDS = 0 V, VGS = ± 16 V 4.0 N-Ch 100 P-Ch - 100 VDS = 40 V, VGS = 0 V N-Ch 1 VDS = - 40 V, VGS = 0 V P-Ch -1 VDS = 40 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 40 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS = 5 V, VGS = 10 V N-Ch 20 VDS = - 5 V, VGS = - 10 V P-Ch - 20 VGS = 10 V, ID = 5 A N-Ch V nA µA A 0.013 0.016 VGS = - 10 V, ID = - 5 A P-Ch 0.020 0.025 VGS = 4.5 V, ID = 4 A N-Ch 0.015 0.019 VGS = - 4.5 V, ID = - 4 A P-Ch 0.025 0.032 VDS = 15 V, ID = 5 A N-Ch 23 VDS = - 15 V, ID = - 5 A P-Ch 18 N-Ch 2390 P-Ch 2120 N-Ch 270 P-Ch 310 Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Ciss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz Coss Crss Qg P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz N-Ch 165 P-Ch 235 VDS = 20 V, VGS = 10 V, ID = 5 A N-Ch 56 85 VDS = - 20 V, VGS = - 10 V, ID = - 5 A P-Ch 52 80 N-Ch 26 40 P-Ch 25.5 39 N-Ch 5.5 P-Ch 5.1 N-Channel VDS = 20 V, VGS = 4.5 V ID = 5 A N-Ch 9.7 P-Ch 11.7 N-Ch 2.6 4.0 P-Ch 5.8 9.0 Qgs Gate-Drain Charge Qgd P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A Gate Resistance Rg f = 1 MHz www.vishay.com 2 pF nC Ω Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 Si4563DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamic Symbol Test Conditions Min. Typ.a Max. Unit a Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tr P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω td(off) tf td(on) N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tr tf P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 16 Ω IS TC = 25 °C td(off) N-Ch 15 23 P-Ch 13 20 N-Ch 20 30 P-Ch 16 25 N-Ch 56 85 P-Ch 75 115 N-Ch 10 15 P-Ch 68 105 N-Ch 88 135 P-Ch 33 50 N-Ch 117 180 140 P-Ch 93 N-Ch 62 95 P-Ch 80 120 N-Ch 19 30 P-Ch 69 105 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM N-Ch 2.7 P-Ch - 2.7 N-Ch 20 P-Ch VSD - 20 IS = 1.5 A N-Ch 0.69 1.2 IS = - 1.6 A P-Ch - 0.72 - 1.2 trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta P-Channel IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A N-Ch 62 95 P-Ch 49 75 N-Ch 62 95 P-Ch 42 65 N-Ch 26 P-Ch 19 N-Ch 36 P-Ch 30 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 3 Si4563DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 1.2 1.0 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 thru 3 V 16 12 8 0.8 0.6 TC = 125 °C 0.4 25 °C 4 0.2 2V - 55 °C 0 0.0 0.6 1.2 1.8 2.4 0.0 0.0 3.0 0.6 VDS - Drain-to-Source Voltage (V) 2.4 3.0 Transfer Characteristics 0.020 3500 0.018 2800 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 1.8 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.016 1.2 VGS = 4.5 V 0.014 Ciss 2100 1400 VGS = 10 V 0.012 700 Coss 0.010 4 8 12 16 20 0 8 16 24 32 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 40 1.8 10 ID = 5 A ID = 5 A VGS = 10 V 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) Crss 0 0 VDS = 10 V 6 VDS = 20 V 4 VDS = 30 V 1.5 VGS = 4.5 V 1.2 0.9 2 0 0 www.vishay.com 4 12 24 36 48 60 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 Si4563DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 R DS(on) - Drain-to-Source On-Resistance (Ω) 20 10 I S - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.00 0.2 0.4 0.6 0.8 1.0 ID = 5 A 0.08 0.06 0.04 TA = 125 °C 0.02 TA = 25 °C 0.00 0 1.2 1 2 VSD - Source-to-Drain Voltage (V) 5 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 0.4 50 ID = 250 µA 0.2 40 ID = 5 mA Power (W) VGS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.0 3 - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s TA = 25 °C Single Pulse DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 5 Si4563DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 10 ID - Drain Current (A) 8 Package Limited 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 Power Dissipation (W) Power Dissipation (W) Current Derating* 2.4 1.6 0.8 0.9 0.6 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 Si4563DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 120 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 7 Si4563DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 20 VGS = 10 thru 4 V I D - Drain Current (A) I D - Drain Current (A) 3V 16 12 8 1.6 1.2 TC = 125 °C 0.8 25 °C 4 0.4 0 0.0 0.0 0.0 - 55 °C 0.6 1.2 1.8 2.4 3.0 0.6 1.8 2.4 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 3500 0.027 2800 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 1.2 VGS = 4.5 V 0.024 0.021 VGS = 10 V 0.018 Ciss 2100 1400 700 Coss Crss 0.015 0 0 4 8 12 16 20 0 16 24 32 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 40 1.8 ID = 5 A ID = 5 A VDS = 10 V 8 6 VGS = 10 V 1.6 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 8 VDS = 20 V 4 VDS = 30 V 2 1.4 VGS = 4.5 V 1.2 1.0 0.8 0 0 www.vishay.com 8 11 22 33 44 55 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 Si4563DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 TJ = 150 °C R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 100 TJ = 25 °C 10 1 ID = 5 A 0.16 0.12 0.08 TA = 125 °C 0.04 TA = 25 °C 0.00 0.1 0.0 0.3 0.6 0.9 1.2 0 1.5 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 0.5 0.4 40 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 0.3 ID = 5 mA 0.1 30 20 0.0 - 0.1 10 - 0.2 - 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 1s 10 s DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 9 Si4563DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 ID - Drain Current (A) 8 Package Limited 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 Power Dissipation (W) Power Dissipation (W) Current Derating* 2.4 1.6 0.9 0.6 0.3 0.8 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 Si4563DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 120 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73513. Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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