Si4563DY Datasheet

Si4563DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
40
P-Channel
- 40
ID (A)a Qg (Typ.)
RDS(on) (Ω)
0.016 at VGS = 10 V
8
0.019 at VGS = 4.5 V
8
0.025 at VGS = - 10 V
-8
0.032 at VGS = - 4.5 V
- 7.5
56
6
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• CCFL Inverter
D1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G2
G1
Top View
Ordering Information: Si4563DY-T1-E3 (Lead (Pb)-free)
Si4563DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
D2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
40
- 40
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
8
-8
TC = 70 °C
8
- 6.5
8b, c
- 6.6b, c
ID
TA = 70 °C
6.5
IDM
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
b, c
- 5.2b, c
20
IS
2.7
- 2.7
1.6b, c
- 1.6b, c
- 20
ISM
20
Single Pulse Avalanche Current
IAS
20
25
EAS
20
31.2
TC = 25 °C
3.25
3.25
TC = 70 °C
2.10
2.10
Maximum Power Dissipation
L = 0 1 mH
TA = 25 °C
PD
2.0
b, c
W
1.25b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
mJ
2.0b, c
1.25b, c
TA = 70 °C
A
- 20
Pulsed Source-Drain Current
Single Pulse Avalanche Energy
V
± 16
TC = 25 °C
TA = 25 °C
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum
Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Symbol
Typ.
Max.
t ≤ 10 s
RthJA
45
Steady State
RthJF
29
P-Channel
Typ.
Max.
62.5
45
62.5
38
29
38
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
1
Si4563DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
N-Ch
40
VGS = 0 V, ID = - 250 µA
P-Ch
- 40
V
ID = 250 µA
N-Ch
40
ID = - 250 µA
P-Ch
- 40
ID = 250 µA
N-Ch
- 4.8
mV/°C
IID = - 250 µA
P-Ch
VDS = VGS, ID = 250 µA
N-Ch
0.8
2.0
VDS = VGS, ID = - 250 µA
P-Ch
- 0.8
- 2.2
VDS = 0 V, VGS = ± 16 V
4.0
N-Ch
100
P-Ch
- 100
VDS = 40 V, VGS = 0 V
N-Ch
1
VDS = - 40 V, VGS = 0 V
P-Ch
-1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
N-Ch
10
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
P-Ch
- 10
VDS = 5 V, VGS = 10 V
N-Ch
20
VDS = - 5 V, VGS = - 10 V
P-Ch
- 20
VGS = 10 V, ID = 5 A
N-Ch
V
nA
µA
A
0.013
0.016
VGS = - 10 V, ID = - 5 A
P-Ch
0.020
0.025
VGS = 4.5 V, ID = 4 A
N-Ch
0.015
0.019
VGS = - 4.5 V, ID = - 4 A
P-Ch
0.025
0.032
VDS = 15 V, ID = 5 A
N-Ch
23
VDS = - 15 V, ID = - 5 A
P-Ch
18
N-Ch
2390
P-Ch
2120
N-Ch
270
P-Ch
310
Ω
S
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Ciss
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
Coss
Crss
Qg
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz
N-Ch
165
P-Ch
235
VDS = 20 V, VGS = 10 V, ID = 5 A
N-Ch
56
85
VDS = - 20 V, VGS = - 10 V, ID = - 5 A
P-Ch
52
80
N-Ch
26
40
P-Ch
25.5
39
N-Ch
5.5
P-Ch
5.1
N-Channel
VDS = 20 V, VGS = 4.5 V ID = 5 A
N-Ch
9.7
P-Ch
11.7
N-Ch
2.6
4.0
P-Ch
5.8
9.0
Qgs
Gate-Drain Charge
Qgd
P-Channel
VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A
Gate Resistance
Rg
f = 1 MHz
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2
pF
nC
Ω
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
Si4563DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Dynamic
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
N-Channel
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
tr
P-Channel
VDD = - 20 V, RL = 4 Ω
ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω
td(off)
tf
td(on)
N-Channel
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
tr
tf
P-Channel
VDD = - 20 V, RL = 4 Ω
ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 16 Ω
IS
TC = 25 °C
td(off)
N-Ch
15
23
P-Ch
13
20
N-Ch
20
30
P-Ch
16
25
N-Ch
56
85
P-Ch
75
115
N-Ch
10
15
P-Ch
68
105
N-Ch
88
135
P-Ch
33
50
N-Ch
117
180
140
P-Ch
93
N-Ch
62
95
P-Ch
80
120
N-Ch
19
30
P-Ch
69
105
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
ISM
N-Ch
2.7
P-Ch
- 2.7
N-Ch
20
P-Ch
VSD
- 20
IS = 1.5 A
N-Ch
0.69
1.2
IS = - 1.6 A
P-Ch
- 0.72
- 1.2
trr
Body Diode Reverse Recovery Charge
Qrr
N-Channel
IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
ta
P-Channel
IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
A
N-Ch
62
95
P-Ch
49
75
N-Ch
62
95
P-Ch
42
65
N-Ch
26
P-Ch
19
N-Ch
36
P-Ch
30
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
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Si4563DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
1.2
1.0
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 10 thru 3 V
16
12
8
0.8
0.6
TC = 125 °C
0.4
25 °C
4
0.2
2V
- 55 °C
0
0.0
0.6
1.2
1.8
2.4
0.0
0.0
3.0
0.6
VDS - Drain-to-Source Voltage (V)
2.4
3.0
Transfer Characteristics
0.020
3500
0.018
2800
C - Capacitance (pF)
R DS(on) - On-Resistance (mΩ)
1.8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.016
1.2
VGS = 4.5 V
0.014
Ciss
2100
1400
VGS = 10 V
0.012
700
Coss
0.010
4
8
12
16
20
0
8
16
24
32
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
40
1.8
10
ID = 5 A
ID = 5 A
VGS = 10 V
8
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
Crss
0
0
VDS = 10 V
6
VDS = 20 V
4
VDS = 30 V
1.5
VGS = 4.5 V
1.2
0.9
2
0
0
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4
12
24
36
48
60
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
Si4563DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
R DS(on) - Drain-to-Source On-Resistance (Ω)
20
10
I S - Source Current (A)
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.00
0.2
0.4
0.6
0.8
1.0
ID = 5 A
0.08
0.06
0.04
TA = 125 °C
0.02
TA = 25 °C
0.00
0
1.2
1
2
VSD - Source-to-Drain Voltage (V)
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
0.4
50
ID = 250 µA
0.2
40
ID = 5 mA
Power (W)
VGS(th) Variance (V)
4
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.0
3
- 0.2
30
20
- 0.4
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
1s
10 s
TA = 25 °C
Single Pulse
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
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Si4563DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
10
ID - Drain Current (A)
8
Package Limited
6
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
Power Dissipation (W)
Power Dissipation (W)
Current Derating*
2.4
1.6
0.8
0.9
0.6
0.3
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
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Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
Si4563DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
1
0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
7
Si4563DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
20
VGS = 10 thru 4 V
I D - Drain Current (A)
I D - Drain Current (A)
3V
16
12
8
1.6
1.2
TC = 125 °C
0.8
25 °C
4
0.4
0
0.0
0.0
0.0
- 55 °C
0.6
1.2
1.8
2.4
3.0
0.6
1.8
2.4
3.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
3500
0.027
2800
C - Capacitance (pF)
R DS(on) - On-Resistance (mΩ)
1.2
VGS = 4.5 V
0.024
0.021
VGS = 10 V
0.018
Ciss
2100
1400
700
Coss
Crss
0.015
0
0
4
8
12
16
20
0
16
24
32
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
40
1.8
ID = 5 A
ID = 5 A
VDS = 10 V
8
6
VGS = 10 V
1.6
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
8
VDS = 20 V
4
VDS = 30 V
2
1.4
VGS = 4.5 V
1.2
1.0
0.8
0
0
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8
11
22
33
44
55
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
Si4563DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
TJ = 150 °C
R DS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
100
TJ = 25 °C
10
1
ID = 5 A
0.16
0.12
0.08
TA = 125 °C
0.04
TA = 25 °C
0.00
0.1
0.0
0.3
0.6
0.9
1.2
0
1.5
1
2
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
0.5
0.4
40
ID = 250 µA
0.2
Power (W)
VGS(th) Variance (V)
0.3
ID = 5 mA
0.1
30
20
0.0
- 0.1
10
- 0.2
- 0.3
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
1s
10 s
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
9
Si4563DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
ID - Drain Current (A)
8
Package Limited
6
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
Power Dissipation (W)
Power Dissipation (W)
Current Derating*
2.4
1.6
0.9
0.6
0.3
0.8
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
Si4563DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
1
0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73513.
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000