IDP30E65D2 Data Sheet (1.7 MB, EN)

Diode
RapidSwitchingEmitterControlledDiode
IDP30E65D2
EmitterControlledDiode
Datasheet
IndustrialPowerControl
IDP30E65D2
EmitterControlledDiode
RapidSwitchingEmitterControlledDiode
Features:
A
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Fastrecovery
•Softswitching
•Lowreverserecoverycharge
•Lowforwardvoltageandstableovertemperature
•175°Cjunctionoperatingtemperature
•Easyparalleling
•Pb-freeleadplating;RoHScompliant
C
Applications:
C
•BoostdiodeinCCMPFC
C
A
KeyPerformanceandPackageParameters
Type
IDP30E65D2
Vrrm
If
Vf,Tvj=25°C
Tvjmax
Marking
Package
650V
30A
1.6V
175°C
E30ED2
PG-TO220-2-1
2
Rev.2.1,2014-09-18
IDP30E65D2
EmitterControlledDiode
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
Rev.2.1,2014-09-18
IDP30E65D2
EmitterControlledDiode
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Repetitivepeakreversevoltage,Tvj≥25°C
VRRM
650
V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
60.0
30.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
90.0
A
Diode surge non repetitive forward current
TC=25°C,tp=8.3ms,sinehalfwave
IFSM
PowerdissipationTC=25°C
Ptot
143.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
A
180.0
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
Diode thermal resistance,1)
junction - case
Rth(j-c)
1.05
K/W
Thermal resistance
junction - ambient
Rth(j-a)
62
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
StaticCharacteristic
Diode forward voltage
VF
IF=30.0A
Tvj=25°C
Tvj=175°C
-
1.60
1.65
2.20
-
V
Reverse leakage current
IR
VR=650V
Tvj=25°C
Tvj=175°C
-
4.0
800.0
40.0
-
µA
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
7.0
-
Unit
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
1)
LE
nH
Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
4
Rev.2.1,2014-09-18
IDP30E65D2
EmitterControlledDiode
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
-
42
-
ns
-
0.34
-
µC
-
14.7
-
A
-
-2100
-
A/µs
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=300A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
-
70
-
ns
-
0.25
-
µC
-
5.7
-
A
-
-700
-
A/µs
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=175°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
-
56
-
ns
-
0.61
-
µC
-
18.0
-
A
-
-2200
-
A/µs
Tvj=125°C,
VR=400V,
IF=30.0A,
diF/dt=300A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
-
73
-
ns
-
0.38
-
µC
-
7.1
-
A
-
-900
-
A/µs
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
5
Rev.2.1,2014-09-18
IDP30E65D2
EmitterControlledDiode
150
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
135
Ptot,POWERDISSIPATION[W]
120
105
90
75
60
45
30
15
0
25
50
75
100
125
150
1
D=0.5
0.2
0.1
0.05
0.02
0.1
0.01
single pulse
i:
1
2
3
4
5
6
ri[K/W]: 0.018165 0.260192 0.287872 0.461564 0.023701
1.6E-3
τi[s]:
2.6E-5
1.8E-4
1.4E-3
6.0E-3
0.09699326 2.079861
0.01
1E-6
175
1E-5
TC,CASETEMPERATURE[°C]
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
0.01
0.1
0.8
Tj=25°C, IF = 30A
Tj=175°C, IF = 30A
80
Tj=25°C, IF = 30A
Tj=175°C, IF = 30A
0.7
Qrr,REVERSERECOVERYCHARGE[µC]
trr,REVERSERECOVERYTIME[ns]
0.001
Figure 2. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
90
70
60
50
40
30
20
0.6
0.5
0.4
0.3
0.2
0.1
10
0
1E-4
tp,PULSEWIDTH[s]
0
500
1000
1500
2000
2500
0.0
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
0
500
1000
1500
2000
2500
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 3. Typicalreverserecoverytimeasafunctionof Figure 4. Typicalreverserecoverychargeasafunction
diodecurrentslope
ofdiodecurrentslope
(VR=400V)
(VR=400V)
6
Rev.2.1,2014-09-18
IDP30E65D2
EmitterControlledDiode
30
0
Tj=25°C, IF = 30A
Tj=175°C, IF = 30A
-500
25
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
Irrm,REVERSERECOVERYCURRENT[A]
Tj=25°C, IF = 30A
Tj=175°C, IF = 30A
-1000
20
-1500
15
-2000
10
-2500
5
0
-3000
0
500
1000
1500
2000
2500
-3500
3000
0
diF/dt,DIODECURRENTSLOPE[A/µs]
500
1000
1500
2000
2500
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typicalpeakreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
Figure 6. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
60
2.50
Tj=25°C
Tj=175°C
IF=15A
IF=30A
IF=60A
2.25
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
50
40
30
20
2.00
1.75
1.50
1.25
1.00
10
0.75
0
0.0
0.5
1.0
1.5
2.0
0.50
2.5
VF,FORWARDVOLTAGE[V]
0
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaldiodeforwardcurrentasafunctionof Figure 8. Typicaldiodeforwardvoltageasafunctionof
forwardvoltage
junctiontemperature
7
Rev.2.1,2014-09-18
IDP30E65D2
EmitterControlledDiode
PG-TO220-2-1
8
Rev.2.1,2014-09-18
IDP30E65D2
EmitterControlledDiode
vGE(t)
90% VGE
a
a
10% VGE
b
b
t
iC(t)
90% IC
90% IC
10% IC
10% IC
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
E =
off
∫V
t
CE
t4
x IC x d t
E
1
t1
on
=
∫V
t
CE x IC x d t
2% VCE
3
t2
t3
t4
9
t
Rev.2.1,2014-09-18
IDP30E65D2
Emitter Controlled Diode
Revision History
IDP30E65D2
Revision: 2014-09-18, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2014-09-18
Final data sheet
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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10
Rev. 2.1, 2014-09-18