J-DEVICES ELECTRICAL CHARACTERIZATION REPORT Lattice Manufacturing Operations 30-Sep-2014 J-DEVICES ELEC. CHAR. REPORT Contents Tabulated Critical Changes in Bill of Materials Yield Data Assembly Test Parametric Data Comparison XP2-5E XP2-17E Simultaneous Switching Outputs (SSO) Comparison XP2-5E XP2-17E Summary J-Devices Electrical Characterization Report Page: 2 Lattice Semiconductor Confidential J-DEVICES ELEC. CHAR. REPORT Bill of Materials BILL OF MATERIALS Product/Package LFXP2-17E/256ftBGA LFXP2-5E/144TQFP ASEM Copper (Control) J-Devices Copper (New) Mold Compound Wire/Diameter Die Attach Epoxy Mold Compound Wire/Diameter Die Attach Epoxy Sumikon G-750SE (Low Alpha) Sumikon G-700SY (Low Alpha) Pd Coated Cu (PCC) / 0.8mil Cu (99.99%) / 0.8mil Kyocera KE-G2250 (Low Alpha) Kyocera KE-G6000 (Low Alpha) Pd Coated Cu Ablebond 84-3MV (PCC) / 0.8mil Pd Coated Cu Sumitomo (PCC) / 0.8mil CRM1076WA J-Devices Electrical Characterization Report Ablebond 2100A Yiztech 8143 Page: 3 Lattice Semiconductor Confidential J-DEVICES ELEC. CHAR. REPORT Yield Data Assembly Device LFXP2-17E Device LFXP2-5E Test Device LFXP2-17E Device LFXP2-5E FTN256 Lot Relative Yield J-Devices Copper Lot (DK34K6235204AEL1) 1.007 ASEM Copper Lot (control) 1.000 TN144 Lot Relative Yield J-Devices Copper Lot (CT44K6379801JEL1) 0.985 ASEM Copper Lot (control) 1.000 FTN256 Lot Relative Yield J-Devices Copper Lot (DK34K6235204AEL1) 1.007 ASEM Copper Lot (control) 1.000 TN144 Lot Relative Yield J-Devices Copper Lot (CT44K6379801JEL1) 0.993 ASEM Copper Lot (control) 1.000 J-Devices has comparable assembly and test yields to the released process at ASEM J-Devices Electrical Characterization Report Page: 4 Lattice Semiconductor Confidential J-DEVICES ELEC. CHAR. REPORT Parametric Data Comparisons – XP2-5E Tpd Count (counts) LFXP2-5E J-Devices Copper Lot ASEM Copper Lot (control) N 537 136,828 Mean Std. Dev 37,707.05 1,056.65 39,450.88 1,803.53 LSL 32,000 32,000 USL 60,000 60,000 Cpk 1.80 1.38 USL 342 342 Cpk 2.74 1.91 Icc (mA) LFXP2-5E J-Devices Copper Lot ASEM Copper Lot (control) N 537 136,828 Mean 26.33 21.14 Std. Dev 3.81 4.57 LSL -5 -5 Pull Down Leakage (@ Vcc = 1.26V; Vcc IO = 3.465V) (uA) LFXP2-5E J-Devices Copper Lot ASEM Copper Lot (control) N 537 136,828 Mean 119.76 120.37 Std. Dev 2.68 2.90 LSL 32 32 USL 205 205 Cpk 10.62 9.72 No-Pullup Leakage Min (@ Vcc = 1.26V; Vcc IO = 3.465V) (uA) LFXP2-5E J-Devices Copper Lot ASEM Copper Lot (control) N 537 136,828 Mean -0.25 -0.12 Std. Dev 0.02 0.03 LSL -8 -8 USL 8 8 Cpk 109.43 93.02 All XP2-5E parameters have acceptable process capability indices. J-Devices parametric process capability is equal or better than the control lot. J-Devices Electrical Characterization Report Page: 5 Lattice Semiconductor Confidential J-DEVICES ELEC. CHAR. REPORT Parametric Data Comparisons – XP2-17E Tpd Count (counts) LFXP2-17E J-Devices Copper Lot ASEM Copper Lot (control) N 310 69,439 Mean Std. Dev 40,204.44 1,528.95 40,051.13 1,607.21 LSL 32,000 32,000 USL 60,000 60,000 Cpk 1.79 1.67 USL 342 342 Cpk 1.90 0.93 Icc (mA) LFXP2-17E J-Devices Copper Lot ASEM Copper Lot (control) N 310 69,439 Mean 62.74 39.11 Std. Dev 11.91 15.76 LSL -5 -5 Pull Down Leakage (@ Vcc = 1.26V; Vcc IO = 3.465V) (uA) LFXP2-17E J-Devices Copper Lot ASEM Copper Lot (control) N 310 69,439 Mean 118.15 119.56 Std. Dev 2.77 3.02 LSL 32 32 USL 205 205 Cpk 10.38 9.44 No-Pullup Leakage Min (@ Vcc = 1.26V; Vcc IO = 3.465V) (uA) LFXP2-17E J-Devices Copper Lot ASEM Copper Lot (control) N 310 69,439 Mean -0.15 -0.11 Std. Dev 16.95 0.34 LSL -8 -8 USL 8 8 Cpk 154.40 7.84 All XP2-17E parameters have acceptable process capability indices. J-Devices parametric process capability is equal or better than the control lot. J-Devices Electrical Characterization Report Page: 6 Lattice Semiconductor Confidential J-DEVICES ELEC. CHAR. REPORT SSO Performance Comparisons – XP2-5E SSO or Simultaneous Switching Output data is a measure of ground bounce or Vcc droop. Larger bounce or droop figures could indicate increased inductance or other parasitics that might impact performance. The design goal was that the SSO difference between the control and J-Devices be less than 10%. PRODUCT/PACKAGE: FXP2-5E/TN144 Part # Vcc_CORE S1 S2 S3 S4 S5 S6 S7 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Wire Diameter Vcc_IO Vcc_Aux Vcc_PLL CLK Frequency # Aggressor Pins Bank Material (Assy Subcon) Cu-Pure (ASEM) 0.8 mil 1.2 V 3.4 V 3.4 V 3.4 V 1 MHz 17 2 Pd Coated Cu (J-Devices) Cu (ASEM) Material Average Cu (J-Devices) Material Average Difference (%) Lot Ground Bounce (at maximum) Vcc Droop (at minimum) Min (mV) Mean (mV) Max (mV) Min (mV) Mean (mV) Max (mV) 319 326.48 335 760 849.82 930 319 329.29 343 760 859.23 930 327 341.50 351 760 849.89 930 CT44K64392012 327 335.90 351 680 760.65 850 327 334.70 343 760 870.19 930 319 327.36 335 680 754.59 850 335 345.28 359 850 938.48 1010 290 299.41 306 800 860.04 920 282 296.28 306 920 960.96 1000 306 313.94 322 760 818.28 880 CT44K5145801EL1 314 326.80 338 840 888.28 960 306 316.18 330 760 839.18 880 314 326.37 338 760 807.12 840 290 298.63 314 760 820.98 880 334.36 840.41 311.09 856.41 6.960% 1.904% Sample size: 2000 counts of Ground Bounce and Vcc Droop Performed by: Patrick, Michelle Mean differences from 2 sets of samples show <10% delta for both Ground Bounce and Vcc Droop. J-Devices Electrical Characterization Report Page: 7 Lattice Semiconductor Confidential J-DEVICES ELEC. CHAR. REPORT SSO Performance Comparisons – XP2-5E (cont.) Vcc Droop Ground Bounce ASEM J-Devices Victim Aggressor Victim Aggressor Sample scope images for XP2-5E SSO comparisons. J-Devices Electrical Characterization Report Page: 8 Lattice Semiconductor Confidential J-DEVICES ELEC. CHAR. REPORT SSO Performance Comparisons – XP2-17E PRODUCT/PACKAGE: FXP2-17E/FTN256 Part # Wire Diameter Vcc_CORE Vcc_IO S1 S2 S3 S4 S5 S6 S7 Q1 Q2 Q3 Q4 Q5 Q6 Q7 0.8 mil 1.2 V 3.4 V Vcc_Aux Vcc_PLL CLK Frequency # Aggressor Pins Bank Material (Assy Subcon) 3.4 V 3.4 V 1 MHz Cu (ASEM) Material Average Cu (J-Devices) Material Average Difference (%) 9 2 Lot Ground Bounce (at maximum) Vcc Droop (at minimum) Min (mV) Mean (mV) Max (mV) Min (mV) Mean (mV) Max (mV) 270 304.74 350 960 1001.30 1040 270 294.54 350 840 881.67 920 270 311.24 350 960 1001.50 1040 Pd Coated Cu (ASEM) DK34K54055013 270 313.26 350 1000 1063.70 1120 270 310.84 350 920 961.70 1000 270 308.24 350 920 966.04 1000 270 305.50 350 920 948.44 960 250 305.88 410 890 1002.90 1050 250 294.28 410 890 961.32 1050 170 290.76 410 890 980.52 1050 Pd Coated Cu (J-Devices) CA14K5424701AEL1 170 297.88 410 890 1027.70 1140 170 293.84 410 890 1020.30 1140 170 287.12 410 890 997.49 1140 170 297.40 410 890 1038.20 1140 306.91 974.91 295.31 1004.06 3.78% 2.99% Sample size: 2000 counts of Ground Bounce and Vcc Droop Performed by: Patrick, Michelle Mean differences from 2 sets of samples show <10% delta for both Ground Bounce and Vcc Droop. J-Devices Electrical Characterization Report Page: 9 Lattice Semiconductor Confidential J-DEVICES ELEC. CHAR. REPORT SSO Performance Comparisons – XP2-17E (cont.) Ground Bounce ASEM J-Devices Victim Aggressor Vcc Droop Victim Aggressor Sample scope images for XP2-17E SSO comparisons. J-Devices Electrical Characterization Report Page: 10 Lattice Semiconductor Confidential J-DEVICES ELEC. CHAR. REPORT Conclusion Qualification samples from J-Devices assembly were compared to control product from the released subcontractor ASEM. Assembly yields were comparable. Test yields were comparable. Electrical parametric measurements are nominal and very well controlled. Simultaneous switching Output bench measurements are well within the design tolerance of 10%. J-Devices assembly process is well controlled and approved for manufacturing release. J-Devices Electrical Characterization Report Page: 11 Lattice Semiconductor Confidential