STB50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STB50NE10 100V <0.027Ω 50A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization 3 1 D2PAK Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number STB50NE10T4 June 2006 Marking Package B50NE10 D Rev 5 2PAK Packaging Tape & reel 1/13 www.st.com 13 Contents STB50NE10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 STB50NE10 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 100 V Drain-gate voltage (RGS = 20 kΩ) 100 V Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 50 A ID Drain current (continuous) at TC = 100°C 35 A Drain current (pulsed) 200 A Total dissipation at TC = 25°C 180 W Derating Factor 1.2 W/°C 6 V/ns -65 to 175 °C IDM (1) Ptot dv/dt Peak diode recovery voltage slope Tstg Storage temperature Tj Max. operating junction temperature 1. Pulse width limited by safe operating area. Table 2. Thermal data Rthj-case Thermal resistance junction-case max 0.83 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Rthj-sink Thermal resistance case-sink max 0.5 °C/W Maximum lead temperature for soldering purpose 300 °C Max value Unit TJ Table 3. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 50 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 300 mJ 3/13 Electrical characteristics 2 STB50NE10 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 25A Table 5. Symbol Test conditions Typ. Max. 100 2 Unit V 1 10 µA µA ±100 nA 3 4 V 0.021 0.027 Ω Max. Unit Dynamic Parameter Test conditions Min. Typ. 20 35 gfs (1) Forward transconductance VDS=VDS>ID(on)xRDS(on) max, ID = 20A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 4350 500 175 td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 50V, ID = 25A RG = 4.7Ω VGS = 10V (see Figure 12) 25 100 45 35 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 80V, ID = 50A, VGS = 10V, RG = 4.7Ω (see Figure 13) 123 24 47 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/13 Min. S 6000 pF pF pF ns ns ns ns 166 nC nC nC STB50NE10 Electrical characteristics Table 6. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 50A, VGS = 0 Reverse recovery time ISD = 50A, di/dt = 100A/µs, Reverse recovery charge VDD = 30V, Tj = 150°C Reverse recovery current (see Figure 14) 155 815 10.5 Max. Unit 50 200 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/13 Electrical characteristics STB50NE10 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STB50NE10 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/13 Test circuit 3 STB50NE10 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/13 Figure 17. Switching time waveform STB50NE10 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STB50NE10 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 E1 G 0.368 0.315 10.4 0.393 8.5 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 10/13 STB50NE10 5 Packing mechanical data Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 11/13 Revision history 6 STB50NE10 Revision history Table 7. 12/13 Revision history Date Revision Changes 21-Jun-2004 4 Complete version 26-Jun-2006 5 New template, no content change STB50NE10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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