STS7NF30L ® N - CHANNEL 30V - 0.021Ω - 7A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS7NF30L ■ ■ ■ V DSS R DS(on) ID 30 V < 0.025 Ω 7A TYPICAL RDS(on) = 0.021 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique " Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SO-8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC MOTOR DRIVE ■ DC-DC CONVERTERS ■ BATTERY MANAGMENT IN NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN PORTABLE/DESKTOP PCs ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID IDM (•) P tot Parameter Value Unit Drain-source Voltage (V GS = 0) 30 V Drain- gate Voltage (R GS = 20 kΩ) 30 V ± 20 V Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at T c = 100 o C 7 4.4 A A Drain Current (pulsed) 42 A 2.5 W Gate-source Voltage o o Total Dissipation at T c = 25 C (•) Pulse width limited by safe operating area May 1999 1/5 STS7NF30L THERMAL DATA R thj-amb Tj Tstg o 50 150 -55 to 150 (*)Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature C/W o C o C (*) Mounted on FR-4 board ( (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 30 V GS = 0 Unit V T c = 125 o C V GS = ± 20 V 1 10 µA µA ± 100 nA Max. Unit ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance I D(on) I D = 250 µA V GS = 10 V V GS = 4.5 V Min. 1 I D = 3.5 A I D = 3.5 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Typ. 1.6 2.5 V 0.021 0.025 0.025 0.032 Ω Ω 20 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 3.5 A V GS = 0 V Min. Typ. Max. Unit 10 S 1250 230 50 pF pF pF STS7NF30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay Time Rise Time V DD = 15 V ID = 3 A V GS = 5 V R G = 4.7 Ω (Resistive Load, see fig. 3) 22 30 ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 24 V I D = 7 A V GS = 4.5 V 17 4 6 23 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Conditions Min. t d(of f) tf Turn-off Delay Time Fall Time V DD = 15 V ID = 3 A V GS = 5 V R G = 4.7 Ω (Resistive Load, see fig. 3) 55 10 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V clamp = 24 V ID = 7 A V GS = 5 V R G = 4.7 Ω (Inductive Load, see fig. 5) 10 18 30 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 7 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 7 A di/dt = 100 A/µs V DD = 20 V T j = 150 o C (see test circuit, fig. 5) t rr Q rr I RRM Min. Typ. V GS = 0 Max. Unit 2 8 A A 1.2 V 30 ns 30 nC 2 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STS7NF30L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 5.0 0.188 0.196 6.2 0.228 c1 45 (typ.) D 4.8 E 5.8 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 4/5 STS7NF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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